P0806ATX
P0806ATX
P0806ATX
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<strong>P0806ATX</strong><br />
N-Channel Enhancement Mode MOSFET<br />
PRODUCT SUMMARY<br />
V (BR)DSS<br />
60V<br />
TO-220<br />
ABSOLUTE MAXIMUM RATINGS (T A = 25 °C Unless Otherwise Noted)<br />
Gate-Source Voltage<br />
Avalanche Energy L = 0.1mH<br />
Power Dissipation<br />
THERMAL RESISTANCE RATINGS<br />
Junction-to-Case<br />
1 Limited by maximum junction temperature.<br />
2 Limited by package.<br />
R DS(ON)<br />
PARAMETERS/TEST CONDITIONS<br />
Continuous Drain Current 1<br />
Pulsed Drain Current 2<br />
8mΩ @V GS = 10V 110A<br />
I D<br />
T C = 25 °C<br />
T C = 100 °C<br />
T C = 25 °C<br />
T C = 100 °C<br />
SYMBOL<br />
Avalanche Current I AS<br />
Operating Junction & Storage Temperature Range<br />
Junction-to-Ambient<br />
E AS<br />
P D<br />
T J, T STG<br />
THERMAL RESISTANCE SYMBOL TYPICAL<br />
R qJC<br />
R qJA<br />
I D<br />
I DM<br />
LIMITS<br />
110<br />
69<br />
300<br />
525<br />
166<br />
66<br />
-55 to 150<br />
MAXIMUM<br />
0.75<br />
62.5<br />
UNITS<br />
Ver 1.0 1 2012/4/16<br />
V GS<br />
±20<br />
102<br />
V<br />
A<br />
mJ<br />
W<br />
°C<br />
UNITS<br />
°C / W
<strong>P0806ATX</strong><br />
N-Channel Enhancement Mode MOSFET<br />
ELECTRICAL CHARACTERISTICS (T J = 25 °C, Unless Otherwise Noted)<br />
PARAMETER SYMBOL<br />
Drain-Source Breakdown Voltage<br />
Gate Threshold Voltage<br />
Gate-Body Leakage<br />
Zero Gate Voltage Drain Current<br />
Forward Transconductance 1<br />
Input Capacitance<br />
Output Capacitance<br />
Reverse Transfer Capacitance<br />
Gate Resistance<br />
Total Gate Charge 2<br />
Gate-Source Charge 2<br />
Gate-Drain Charge 2<br />
Turn-On Delay Time 2<br />
Rise Time 2<br />
Turn-Off Delay Time 2<br />
Fall Time 2<br />
Continuous Current 3<br />
Forward Voltage 1<br />
Reverse Recovery Time<br />
Reverse Recovery Charge<br />
1 Pulse test : Pulse Width � 300 msec, Duty Cycle � 2%.<br />
2 Independent of operating temperature.<br />
V (BR)DSS<br />
V GS(th)<br />
t d(on)<br />
3 Limited by maximum junction temperature.<br />
t r<br />
t d(off)<br />
t f<br />
TEST CONDITIONS<br />
STATIC<br />
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T J = 25 °C)<br />
I S<br />
V SD<br />
t rr<br />
Q rr<br />
V GS = 0V, I D = 250mA<br />
On-State Drain Current<br />
Drain-Source On-State<br />
VGS = 10V, ID = 55A<br />
1 ID(ON) VDS = 10V, VGS = 10V<br />
Resistance 1<br />
I GSS<br />
I DSS<br />
R DS(ON)<br />
g fs<br />
C iss<br />
C oss<br />
C rss<br />
R g<br />
Q g<br />
Q gs<br />
Q gd<br />
V DS = V GS, I D = 250mA<br />
V DS = 0V, V GS = ±20V<br />
V DS = 60V, V GS = 0V<br />
V DS = 48V, V GS = 0V , T J = 125 °C<br />
V DS = 50V, I D = 55A<br />
DYNAMIC<br />
V GS = 0V, V DS = 25V, f = 1MHz<br />
V GS = 0V, V DS = 0V, f = 1MHz<br />
V DS = 30V, V GS = 10V, ID = 50A<br />
V DD = 15V,<br />
I D @ 55A, V GS = 10V, R GEN = 6Ω<br />
I F = 55A, V GS = 0V<br />
V GS = 0V, I F = 55A,<br />
dl F/dt = 100A / μS<br />
MIN TYP MAX<br />
60<br />
LIMITS<br />
2 3 4<br />
±100 nA<br />
1<br />
25<br />
100 A<br />
6.9 8 mΩ<br />
90 S<br />
4470<br />
1090<br />
120<br />
2 Ω<br />
91<br />
23<br />
33<br />
20<br />
110<br />
50<br />
65<br />
UNIT<br />
V<br />
mA<br />
nF<br />
nC<br />
nS<br />
110 A<br />
1.3 V<br />
125 nS<br />
260 nC<br />
Ver 1.0 2 2012/4/16
<strong>P0806ATX</strong><br />
N-Channel Enhancement Mode MOSFET<br />
Ver 1.0 3 2012/4/16
<strong>P0806ATX</strong><br />
N-Channel Enhancement Mode MOSFET<br />
Ver 1.0 4 2012/4/16
<strong>P0806ATX</strong><br />
N-Channel Enhancement Mode MOSFET<br />
Ver 1.0 5 2012/4/16
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