P1203ED
P1203ED
P1203ED
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<strong>P1203ED</strong><br />
P-Channel Enhancement Mode MOSFET<br />
PRODUCT SUMMARY<br />
V (BR)DSS<br />
-30V<br />
TO-252<br />
ABSOLUTE MAXIMUM RATINGS (T A = 25 °C Unless Otherwise Noted)<br />
Drain-Source Voltage<br />
Gate-Source Voltage<br />
Avalanche Current<br />
Power Dissipation<br />
THERMAL RESISTANCE RATINGS<br />
Junction-to-Case<br />
Junction-to-Ambient<br />
1 Pulse width limited by maximum junction temperature.<br />
2 VDD=-15V.Starting T J=25°C<br />
R DS(ON)<br />
PARAMETERS/TEST CONDITIONS<br />
Continuous Drain Current<br />
Pulsed Drain Current 1<br />
12mΩ @V GS = -10V -52A<br />
Avalanche Energy 2 L = 0.1mH<br />
Junction & Storage Temperature Range<br />
T C = 25 °C<br />
T C = 25 °C<br />
T C = 100 °C<br />
SYMBOL<br />
THERMAL RESISTANCE SYMBOL<br />
I D<br />
T C = 100 °C<br />
P D<br />
T J, T STG<br />
R qJC<br />
R qJA<br />
V DS<br />
V GS<br />
I D<br />
I DM<br />
I AS<br />
E AS<br />
TYPICAL<br />
LIMITS<br />
-30<br />
±25<br />
-52<br />
-33<br />
-150<br />
-44<br />
97<br />
49<br />
19<br />
-55 to 150<br />
MAXIMUM<br />
2.55<br />
50<br />
UNITS<br />
Ver 1.0 1 2012/11/2<br />
V<br />
A<br />
mJ<br />
W<br />
°C<br />
UNITS<br />
°C / W
<strong>P1203ED</strong><br />
P-Channel Enhancement Mode MOSFET<br />
ELECTRICAL CHARACTERISTICS (T J = 25 °C, Unless Otherwise Noted)<br />
Drain-Source On-State<br />
Resistance1<br />
Input Capacitance<br />
Output Capacitance<br />
Gate-Drain Charge 2<br />
PARAMETER SYMBOL<br />
Drain-Source Breakdown Voltage<br />
Gate Threshold Voltage<br />
Gate-Body Leakage<br />
Zero Gate Voltage Drain Current<br />
Turn-On Delay Time 2<br />
Rise Time 2<br />
Turn-Off Delay Time 2<br />
Continuous Current<br />
Reverse Recovery Time<br />
Reverse Recovery Charge<br />
1 Pulse test : Pulse Width � 300 msec, Duty Cycle � 2%.<br />
2 Independent of operating temperature.<br />
V GS(th)<br />
On-State Drain Current 1 I D(ON)<br />
Forward Transconductance 1<br />
Reverse Transfer Capacitance<br />
Fall Time 2<br />
Forward Voltage 1<br />
V (BR)DSS<br />
I GSS<br />
I DSS<br />
R DS(ON)<br />
g fs<br />
C iss<br />
C oss<br />
C rss<br />
Q gd<br />
t d(on)<br />
t r<br />
t d(off)<br />
t f<br />
Q rr<br />
TEST CONDITIONS<br />
STATIC<br />
V GS = -4.5V, I D = -9A<br />
V GS = -10V, I D = -12A<br />
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T J = 25 °C)<br />
I S<br />
V SD<br />
t rr<br />
V GS = 0V, I D = -250mA<br />
V DS = V GS, I D = -250mA<br />
V DS = 0V, V GS = ±25V<br />
V DS = -24V, V GS = 0V<br />
V DS = -20V, V GS = 0V , T J = 55 °C<br />
V DS = -5V, V GS = -10V<br />
V DS = -5V, I D = -12A<br />
DYNAMIC<br />
V GS = 0V, V DS = -15V, f = 1MHz<br />
Gate Resistance R g V GS = 0V, V DS = 0V, f = 1MHz<br />
V DS = -15V, R L=1.25Ω<br />
I D @ 12A, V GS = -10V, R GEN= 6Ω<br />
I F = -12A, V GS = 0V<br />
MIN TYP MAX<br />
-30<br />
LIMITS<br />
-1.0 -1.6 -2.5<br />
VGS=10V VGS=4.5V 57<br />
29<br />
Gate-Source Charge 8<br />
2<br />
Total Gate Charge<br />
VDS = 0.5V (BR)DSS, VGS = -10V,<br />
Qgs ID = -12A<br />
2 Qg I F = -12A, dl F/dt = 100A / mS<br />
±100 nA<br />
1<br />
10<br />
-150 A<br />
14 19<br />
8 12<br />
26 S<br />
2840<br />
451<br />
411<br />
3.35 Ω<br />
15<br />
12<br />
8<br />
35<br />
20<br />
UNIT<br />
V<br />
mA<br />
mΩ<br />
pF<br />
nC<br />
nS<br />
-35 A<br />
-1.2 V<br />
28.2 nS<br />
18 nC<br />
Ver 1.0 2 2012/11/2
<strong>P1203ED</strong><br />
P-Channel Enhancement Mode MOSFET<br />
Ver 1.0 3 2012/11/2
<strong>P1203ED</strong><br />
P-Channel Enhancement Mode MOSFET<br />
Ver 1.0 4 2012/11/2
<strong>P1203ED</strong><br />
P-Channel Enhancement Mode MOSFET<br />
Ver 1.0 5 2012/11/2
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