Electronic and optical properties of graphene- and graphane ... - MIFP

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Quasiparticle band gaps 2D sheet GW direct gap (eV) SiC 3.7 (K) SiC:H 5.3 (G) C:H 5.4 (G) Si:H 3.6 (G)
SiC:H band edge density of states The fundamental gap of SiC:H approaches the value found for graphane: near the gap the DOS is dominated by C and H(C) states.
Page 1 and 2: Electronic and optical properties o
Page 3 and 4: c Theoretical tools: ab-initio meth
Page 5 and 6: Quasiparticle equation � � iGW
Page 7 and 8: hn GW BSE Bethe Salpeter equation c
Page 9 and 10: Graphene and graphane-like 2D SiC l
Page 11: Quasiparticle band structures SiC S
Page 15 and 16: SiC:H - Electrostatic potential Two
Page 17 and 18: Optical properties (RPA) SiC SiC:H
Page 19 and 20: 2D SiC: first exciton in k-space Ho
Page 21 and 22: 2D SiC:H: first exciton in k-space
Page 23 and 24: Bound excitons in 2D hydrogenated C
Page 25 and 26: With the two limits: 2D Screened Co
Page 27 and 28: Log e-h attraction 2D Screened Coul
Page 29: Conclusions and outlook • 2D-base

Electronic and optical properties of graphene- and graphane ... - MIFP

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