NSI45060JD-D ds - Silica

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APPLICATIONS + − V in Anode POWER DISSIPATION (mW) Q1 Q2 NSI45060JDT4G 700 mm 1800 1500 900 600 −40 −20 0 20 40 60 80 2 /2 oz 700 mm2 /1 oz 500 mm2 2100 1200 /1 oz 300 mm 300 2 500 mm /1 oz 2 3000 /2 oz 2700 2400 300 mm2 4200 3900 3600 3300 /2 oz 100 T A, AMBIENT TEMPERATURE (°C) Figure 7. Power Dissipation vs. Ambient Temperature @ T J = 150C D1 D1 Cathode Qx http://onsemi.com 4 Anode 120 Q1 Q2 Radj Radj Radj Cathode Radj Radj Radj LED LED LED + HF3−R5570 HF3−R5570 HF3−R5570 − Vin LED HF3−R5570 LED HF3−R5570 LED HF3−R5570 LED HF3−R5570 LED HF3−R5570 Figure 8. Typical Application Circuit (30 mA each LED String) LED HF3−R5570 LED HF3−R5570 Number of LED’s that can be connected is determined by: D1 is a reverse battery protection diode LED’s = ((V in − Q X V F − D1 V F)/LED V F) Example: V in = 12 Vdc, Q X V F = 3.5 Vdc, D1VF = 0.7 V LED V F = 2.2 Vdc @ 30 mA (12 Vdc − 4.2 Vdc)/2.2 Vdc = 3 LEDs in series. LED HF3−R5570 LED HF3−R5570 Figure 9. Typical Application Circuit (90 mA each LED String) Number of LED’s that can be connected is determined by: D1 is a reverse battery protection diode Example: V in = 12 Vdc, Q X V F = 3.5 Vdc, D1VF = 0.7 V LED V F = 2.6 Vdc @ 90 mA (12 Vdc − (3.5 + 0.7 Vdc))/2.6 Vdc = 3 LEDs in series. Number of Drivers = LED current/30 mA 90 mA/30 mA = 3 Drivers (Q1, Q2, Q3) Qx
I (mA) NSI45060JDT4G Comparison of LED Circuit using CCR vs. Resistor Biasing ON Semiconductor CCR Design Resistor Biased Design Constant brightness over full Supply Voltage (more efficient), see Figure 10 http://onsemi.com 5 Large variations in brightness over full Automotive Supply Voltage Little variation of power in LEDs, see Figure 11 Large variations of current (power) in LEDs Constant current extends LED strings lifetime, see Figure 10 High Supply Voltage/ Higher Current in LED strings limits lifetime Current decreases as voltage increases, see Figure 10 Current increases as voltage increases Current supplied to LED string decreases as temperature increases (self-limiting), see Figure 2 80 70 60 50 40 30 20 10 0 9 LED current decreases as temperature increases Single resistor is used for current select Requires costly inventory (need for several resistor values to match LED intensity) Fewer components, less board space required More components, more board space required T A = 25°C Circuit Current with CCR Device Circuit Current with 125 10 Surface mount component Through-hole components 11 12 Representative Test Data for Figure 8 Circuit, Current of LEDs, FR−4 @ 300 mm 2 , 2 oz Copper Area 13 14 15 16 V in (V) V in (V) Figure 10. Series Circuit Current Figure 11. LED Power Current Regulation: Pulse Mode (I reg(P)) vs DC Steady-State (I reg(SS)) There are two methods to measure current regulation: Pulse mode (Ireg(P)) testing is applicable for factory and incoming inspection of a CCR where test times are a minimum. (t < 300 s). DC Steady-State (Ireg(SS)) testing is applicable for application verification where the CCR will be operational for seconds, minutes, or even hours. ON Semiconductor has correlated the difference in Ireg(P) to Pd LEDs (mW) 600 500 400 300 200 100 0 9 T A = 25°C LED Power with CCR Device LED Power with 125 10 11 12 Representative Test Data for Figure 8 Circuit, Pd of LEDs, FR−4 @ 300 mm 2 , 2 oz Copper Area 13 14 15 16 Ireg(SS) for stated board material, size, copper area and copper thickness. Ireg(P) will always be greater than Ireg(SS) due to the die temperature rising during Ireg(SS). This heating effect can be minimized during circuit design with the correct selection of board material, metal trace size and weight, for the operating current, voltage, board operating temperature (TA) and package. (Refer to Thermal Characteristics table).
Page 1 and 2: NSI45060JDT4G Adjustable Constant C
Page 3: I reg, CURRENT REGULATION (mA) I re

NSI45060JD-D ds - Silica

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