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ESD Protection Device Simulation and Design - Silvaco

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CMOS <strong>Protection</strong> <strong>Device</strong> Under HBM Test<br />

MOS structure was<br />

created using ATHENA<br />

A high current pulse was<br />

applied to the device<br />

according to the HBM<br />

st<strong>and</strong>ard<br />

ATLAS records the peak<br />

temperature in the<br />

device at each time step<br />

of the simulation<br />

Due to heat capacity the<br />

maximum temperature<br />

occurs significantly later<br />

than the peak current<br />

<strong>Simulation</strong> of Electrothermal Interactions in <strong>ESD</strong> <strong>Protection</strong> <strong>Device</strong>s<br />

Peak temperature in MOSFET during an HBM<br />

<strong>ESD</strong> current pulse."<br />

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