GaAs MESFET Foundry Service - TriQuint Semiconductor

Metal 2 

Dielectric 

Metal 1 Metal 1 Metal 1 - 2um 

Dielectric 

N+ N+ 

N-/P- Channel 

E,D,G MESFET 

General Description 

TriQuint’s TQTRx is an advanced 0.6 µm enhancement/ 

depletion mode MESFET process with an integrated power 

MESFET, general purpose D-Mode MESFET and Enhancement 

Mode MESFET. This process supports RF and mixed 

mode applications from RF to microwave frequencies. High 

density interconnections are accomplished with two thick 

global and one local metal interconnect layers. The three 

metal layers are encapsulated in a high performance dielectric 

that allows wiring flexibility and plastic packaging simplicity. 

Precision NiCr resistors and high value MIM capacitors 

are included. The TQTRx process is currently Tri- 

Quint’s highest volume process and is manufactured on 

150-mm (6 inch) wafers. 

TriQuint Semiconductor 

2300 NE Brookwood Pkwy 

Hillsboro, Oregon 97124 

Metal 0 

Metal 2 - 4um 

Dielectric 

MIM Metal NiCr 

MIM Capacitor 

Isolation Implant 

Semi-Insulating GaAs Substrate 

TQTRx Process Cross-Section 

NiCr Resistor 

Semiconductors for Communications 

www.triquint.com 

Page 1 of 7; Rev 2.1 8/10/02 

Production Process 

TQTRx 

GaAs MESFET Foundry Service 

Features 

• 0.6 µm Gate Length MESFET 

Process 

• 4 Active Devices: 

• Power & Gain D-FETs 

• E-FET 

• Schottky-Barrier Diodes 

• High Density Interconnects: 

• 2 Global and 1 local 

• 6 µm total thickness 

• High-Q Passives 

• Bulk & Thin Film Resistors 

• High Value Capacitors 

• Dielectric Encapsulated Metals 

• Planarized Surface; simplified 

plastic packaging 

• Substrate Vias Available 

• Volume Production Process 

• Validated Models and Design 

Support 

Applications 

• Flexible Process Supports: 

• Low Supply Voltage Capability 

• 3V PA’s, Driver Amps, 

Upconverters 

• LNAs and Downconverters down to 

1V 

• Integrated Transceivers: LNA + Sw 

+ PA, UPC + PA 

• Fiber-Optic TIA and Laser Diode 

Drivers 

• Mobile Phone Front End Blocks: 

• Cell Band 

• PCS Band 

• GSM Band 

• WLAN: 

• ISM 

• HYPERLAN2 

• UNII 

Phone: 503-615-9000 

Fax: 503-615-8905 

Email: info@triquint.com

TQTRx 

Process 

Details 

Maximum 

Ratings 




Element Parameter Value Units 

Gate Length (All FETs) 0.6 µm 

E-FET; Threshold Voltage +0.15 V 

Imax 90 mA/mm 

Gm 225 mS/mm 

Breakdown, Vgd 22 V 

Fmin, 6 GHz 0.90 dB 

D-FET Pinchoff Voltage -0.6 V 

Idss 70 mA/mm 

Gm 200 mS/mm 

Breakdown, Vgd 18.5 V 


G-FET Pinchoff Voltage -2.2 V 

Idss 270 mA/mm 

Imax 400 mA/mm 

Gm 170 mS/mm 

Breakdown, Vgd 19 V 


Interconnects 3 Metal Layers 

N+ Diode V forward 0.55 V 

MIM Caps Values 1200 pF/mm2 

Resistors NiCr 50 Ohms/Sq 

Bulk 700 Ohms/sq 

Vias Yes 

Mask Layers No Vias 16 

With Vias 18 

FET Operating Channel Temp -55 to +150 Deg C 

Capacitor Breakdown Voltage - Design 10 V 

- Typical 20 V 

Specifications Subject to Change 



Page 2 of 7; Rev 2.1 8/10/02 


TQTRx 

MESFET Foundry Service 

Phone: 503-615-9000 

Fax: 503-615-8905 


GFET 

300 um 

Vds=3V 

50% Idss 

DFET 

300 um 

Vds=3V 

50% Idss 

EFET 

300 um 

Vds=3V 

50% Idmax 




S11 

S22 

S11 

S22 

S11 

S22 



Page 3 of 7; Rev 2.1 8/10/02 


TQTRx 


-4 -3 -2 -1 0 1 2 3 4 

Freq (0.1GHz to 26.1GHz) S12 / .05 

S21 

-4 -3 -2 -1 0 1 2 3 4 


S21 

-6 -4 -2 0 2 4 6 


S21 

Phone: 503-615-9000 

Fax: 503-615-8905 


Gmax (dB) 

Gmax (dB) 

Gmax (dB) 

24.0 

20.0 

16.0 

12.0 

8.0 

4.0 

26.0 

22.0 

18.0 

14.0 

10.0 

6.0 

26.0 

22.0 

18.0 

14.0 

10.0 

6.0 

0.2 

-0.4 

-1.6 




Gmax vs Vgs vs Frequency 

300 um FETs; Three Types 

Vds = 1.5 & 3.0 V; T=27°C 

EFET 

Gmax vs Vgs vs Freq. 

-1.4 

DFET 

Gmax vs Vgs vs Freq 

-0.2 

0.0 

Vgs (V) 

0.2 

GFET 

Gmax vs Vgs vs Freq 

-1.2 

0.3 

-1.0 

0.4 

-0.8 

Vgs (V) 

-0.6 

Vgs (V) 

0.5 

-0.4 

-0.2 

0.0 

0.6 

0.4 

0.2 

Vds = 1.5V 

@ 1.1GHz 

Vds + 1.5V 

@ 2.2GHz 

Vds + 1.5V 

@ 5.8GHz 

Vds = 1.5V 

@ 7.9GHz 

Vds = 1.5V 

@ 12.1GHz 

Vds = 3.0V 

@ 1.1GHz 

Vds = 3.0V 

@ 2.2GHz 

Vds = 3.0V 

@ 5.8GHz 

Vds = 3.0V 

@ 7.9GHz 

Vds = 3.0V 

@ 12.1GHz 

Vds = 1.5V 

@ 1.1GHz 

Vds = 1.5V 

@ 2.2GHz 

Vds = 1.5V 

@ 5.8GHz 

Vds = 1.5V 

@ 7.9GHz 

Vds = 1.5V 

@ 12.1GHz 

Vds = 3.0V 

@ 1.1GHz 

Vds = 3.0V 

@ 2.2Ghz 

Vds = 3.0V 

@ 5.8GHz 

Vds = 3.0V 

@ 7.9GHz 

Vds = 3.0V 

@ 12.1GHz 

Vds = 1.5V 

@ 1.1GHz 

Vds = 1.5V 

@ 2.2GHz 

Vds = 1.5V 

@ 5.8GHz 

Vds = 1.5V 

@ 7.9GHz 

Vds = 1.5V 

@ 12.1GHz 

Vds = 3.0V 

@ 1.1GHz 

Vds = 3.0V 

@ 2.2GHz 

Vds = 3.0V 

@ 5.8GHz 

Vds = 3.0V 

@ 7.9GHz 

Vds = 3.0V 

@ 12.1GHz 

Ft (GHz) 

Ft (GHz) 

Ft (GHz) 

20.00 

15.00 

10.00 

5.00 

0.00 

25.0 

22.0 

19.0 

16.0 

13.0 

10.0 

25.0 

23.0 

21.0 

19.0 

17.0 

15.0 



Page 4 of 7; Rev 2.1 8/10/02 


TQTRx 


Ft versus Vgs; 

300 um FETs; Three Types; 

Vds = 1.5 & 3.0 V; T=27°C 

0.20 

-0.40 

0.30 

-0.20 

-1.60 

-1.40 

-1.20 

-1.00 

-0.80 

EFET 

Ft vs Vgs 

0.40 

Vgs (V) 

0.50 

DFET 

Ft vs Vgs 

0.00 

Vgs (V) 

0.20 

GFET 

Ft vs Vgs 

-0.60 

Vgs (V) 

0.60 

0.40 

-0.40 

-0.20 

0.00 

0.20 

Vds = 1.5V 

Vds = 3.0V 

Vds = 1.5V 

Vds = 3.0V 

Vds = 1.5V 

Vds = 3.0V 

Phone: 503-615-9000 

Fax: 503-615-8905 


EFET 

IV Curves 

300 um 

DFET 

IV Curves 

300 um 

GFET 

IV Curves 

300 um 






Page 5 of 7; Rev 2.1 8/10/02 


TQTRx 


Phone: 503-615-9000 

Fax: 503-615-8905 





Applications Examples 



Page 6 of 7; Rev 2.1 8/10/02 


TQTRx 


TQ5M31; 3V Downconverter Mixer IC: 

General purpose RFIC mixer downcnverter; RF range = 500 to 2,500 MHz; IF output range 45 to 

500 MHz; PCS, ISM, GPS, L-Band Satellite and WLAN applications. 

Parameter Min Typ Max Units 

Conversion Gain 4.0 dB 

Noise Figure 8.5 dB 

Input 3OIP 9.0 dB 

DC Supply Current 6.2 mA 

(Full Datasheet at: www.tqs.com/Wireless/Products/TQ5M31/TQ5M31.pdf) 

TQ3M31; Dual Band LNA: 

For Cellular and PCS band CDMA/AMPS applications; IS-95 and AMPS compliant; On-Chip 

switches for mode selection. 

Parameter Typ @ 881 MHz Typ@ 1960 MHz Units 

Gain 881 MHz 13.0 13.5 dB 

Noise Figure 1.4 1.5 dB 

Input 3OIP 12.5 9.0 dBm 

DC Supply Current 10.0 11.0 mA 

(Full Datasheet at: www.tqs.com/Wireless/Products/TQ3M31/TQ3M31.pdf) 

Phone: 503-615-9000 

Fax: 503-615-8905 


Prototyping and Development 

• Prototype Development QuickTurn (PDQ): 

• Shared Mask Set; 

• Run Monthly 

• Hot Lot Cycle Time 

• Via and Non-Via Options 

• Prototype Wafer Option (PWO): 

• Customer-specific Masks, Customer Schedule 

• 2 wafers delivered 

• Hot Lot Cycle Time 

• With thinning and sawing; optional backside 

vias 

• Design Sensitivity Test (DST) Wafer Run 

• Yield Analysis 

• Design Sensitivity to Process Variation 

• 14 Wafer Start; Spread of Vp Values 




Design Tools Available 

• Device Library of Circuit Elements: FETs, Diodes, Thin 

Film and Implanted Resistors, Capacitors, Inductors 

• Parameters for “TriQuint’s Own Model” (TOM) 

• Agilent ADS Design Kit Available Now 

• PSPICE and MWO Models Available Now 

• Layout Libraries Available for ICED, Cadence and 

MWO Now 

• Verification Kit for ICEditors Now 

• Qualified Package Models for Supported Package Styles 

Training 

• GaAs Design Classes: 

• Half Day Introduction; Upon Request 

• Four Day Technical Training; Fall & Spring at 

TriQuint Oregon facility 

• For Training & PDQ Schedules, please visit: 

www.triquint.com/foundry/ 



Page 7 of 7; Rev 2.1 8/10/02 


TQTRx 


Process Qualification Status 

• TQTRx is fully released and qualified 

• Reliability Reports: 

• TQTRx Process Qualification 

• High Power Product Qualification 

• TQTRx Element Qualification Report 

• For more information on Quality and Reliability, 

contact TriQuint or visit www.tqs.com/ 

Manufacturing/QR/bdy_qr-pubs.htm. 

Applications Support Services 

• Tiling of GDSII Stream Files including PCM 

• Design Rule Check Services 

• Layout versus Schematic Check Services 

• Packaging Development Engineering 

• Engineering Services 

• On-Wafer Test 

• Packaged Parts Test 

• Thermal Analysis 

• Yield Enhancement 

• Part Qualification Services 

• Failure Analysis 

Manufacturing Services 

• Mask Making 

• Production 150 mm Wafer Fab 

• Wafer Thinning 

• Wafer Sawing 

• Substrate Vias 

• DC Die Sort Testing 

• RF On-Wafer Testing 

• Plastic Packaging 

• RF Packaged Part Testing 

Please contact your local TriQuint Semiconductor Representative or 

Foundry Services Staff for additional information: 

E-mail: sales@triquint.com Phone: (503) 615-9000 Fax: (503) 615-8905 

Phone: 503-615-9000 

Fax: 503-615-8905

GaAs MESFET Foundry Service - TriQuint Semiconductor

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