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LIST OF REFERNCES

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<strong>LIST</strong> <strong>OF</strong> REFERNCE<br />

Gelbstein, Y., Dashevsky, Z., Dariel, M. P. (2005) High performance<br />

n-type PbTe-based materials for thermoelectric applications,<br />

physica B: Phys. Cond. Matter 363; 1.<br />

Gordon, P. (1968) Principle of phase diagrams in materials systems,<br />

McGrow – Hill Book , company , New York.<br />

Gurevich, Yu., G., Koshkin, V.M. and volovichev, J.N., (1995)<br />

the heterocontact of two intrinsic semiconductors and radiation –<br />

stable electronics, sol. Stat. electron 38; 235.<br />

Guettari, N., Amory, C., Morsli, M., Berna, J.C. and Khelil, A. (2003)<br />

In x Te g semiconductor thin films obtained by Co-evporation, thin<br />

sol. Films 431; 497.<br />

Gury, A.G. and Hern, J.J. (1974) Elements of physical metallurgy,<br />

Oxford and IBH publishing Co., New Delhi Addison – Wesley<br />

Publishing Co.<br />

AL-Harbi,S. R.(2007) Crystal growth and study of some physical<br />

properties of Ternary semiconductor compounds TlInS 2<br />

and TlInSe 2 , Ph. D Thesis, Girls College of Education in<br />

Jeddah, K. S. A..<br />

Harris, B. and Bunsell, A.R. (1977) Structure and properties of<br />

engineering Materials, Longman, London and New York.<br />

Hanias, M.P. and Anagnostopoulos, A.N. (1993) Negative differential<br />

resistance Effects in the TlGaTe 3 ternary semiconductor, Phys.<br />

Rev. B, 47: 4261.<br />

Hegab, N.A. Afifi, M.A., El-shazly, A.E and Bekheet A.E (1998) effect<br />

of annealing on the structural and electrical properties of In 2 Te 3<br />

J. Mat. Scien. 33; 2441.<br />

Hegab, N.A., Bekheet, A.E., Afifi, M.A. and El-shazly A.A. (1998)<br />

effect of annealing on the optical properties of In 2 Te 3 thin films,<br />

Appl. Phys. A, 66; 235.<br />

Hogg, J.H.C and Sutherland, H.H., (1973) the crystal structure of<br />

tetraindium tritelluride Acta, Cryst. 29; 2483.<br />

Hogg, J.H.C. and Sutherland, H.H. (1976) Indium telluride, Acta cryst.<br />

32; 2689.<br />

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