Silicon Phototransistor - OPTEK Technology

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Silicon Phototransistor OP570 Series OP573 DIMENSIONS ARE IN: [MILLIMETERS] INCHES OP570 TOLERANCE IS ± .0039 [0.1] OP571 OP572 2 1 Pin # Transistor 1 Collector 2 Emitter OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. Issue 1.2 02/07 Page 2 of 4 OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Silicon Phototransistor OP570 Series Absolute Maximum Ratings (T A =25°C unless otherwise noted) Storage Temperature Range Operating Temperature Range Collector-Emitter Voltage Emitter-Collector Voltage Collector Current -40 o C to +85 o C -25 o C to +85 o C 30 V Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron] 260° C (1) Power Dissipation 130 mW (2) Notes: 1. Solder time less than 5 seconds at temperature extreme. 2. Derate linearly at 2.17 mW/° C above 25° C. Electrical Characteristics (T A = 25°C unless otherwise noted) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode I C (ON) On-State Collector Current 2.5 - - mA V CE = 5.0 V, E E = 5.0 mW/cm 2 (1) V CE(SAT) Forward Voltage - - 0.4 V I C = 100 µA, E E = 2.0 mW/cm 2 (1) I CEO Reverse Current - - 100 nA V CE = 5.0 V, E E = 0 (2) V BR(CEO) Wavelength at Peak Emission 30 - - V I C = 100 µA V (BR)ECO Emission Angle at Half Power Points 5 - - V I E = 100 µA Notes: 1. Light source is an unfiltered GaAl LED with a peak emission wavelength of 935nm and a radiometric intensity level which varies less than 10% over the entire lens surface of the phototransistor being tested. 2. To calculate typical collector dark current in µA, use the formula I CEO = 10 (0.04 Ta-3.4) where Ta is the ambient temperature in ° C. 5 V 20 mA Relative Collector Current 160% 140% 120% 100% 80% 60% 40% 20% Relative On-State Collector Current vs. Irradiance Normalized at Ee = 5mW/cm 2 Conditions: VCE = 5V, λ = 935nm, TA = 25 °C Relative Collector Current 140% 130% 120% 110% 100% 90% 80% 70% Relative On-State Collector Current vs. Temperature Normalized at TA = 25°C . Conditions: VCE = 5V, λ = 935nm, TA = 25 °C 0 1.0 2.0 3.0 4.0 Ee—Irradiance (mW/cm 2 ) 5.0 6.0 7.0 8.0 -25 0 25 50 75 100 Temperature—(°C) OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com Issue 1.2 02/07 Page 3 of 4
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Silicon Phototransistor - OPTEK Technology

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