Silicon Phototransistor - OPTEK Technology

Silicon Phototransistor
OP570 Series
Features:
• SMD plastic package
• High photo sensitivity
• Fast response time
• Choice of four lead configurations
• IR transmissive plastic package
OP573
OP572
OP570
OP571
Description:
Each device in this series is an NPN silicon phototransistor mounted in an opaque plastic SMD package, with an
integral molded lens that enables a narrow acceptance angle and a higher collector current than devices without a
lense.
The OP570 series has four lead configurations and is compatible with most automated mounting equipment. The
OP570 series is mechanically and spectrally matched to the OP270 series infrared LEDs.
Please refer to Application Bulletins 208 and 210 for additional design information and reliability (degradation) data.
Applications:
• Non-contact position sensing
• Datum detection
• Machine automation
• Optical encoders
• IrDA
• Reflective and transmissive sensors
Part Number
OP570
OP571
OP572
OP573
Ordering Information
Sensor
Viewing
Angle
Phototransistor 25°
Lead
Length
Axial
Gull Wing
Yoke
Rev. Gull
OP570
OP571
OP571
OP572
OP573
1
2
Pin # Transistor
1 Collector
2 Emitter
RoHS
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (800) 341-4747 FAX: (972) 323– 2396 sensors@optekinc.com www.optekinc.com
Issue 1.1 02/07
Page 1 of 3

Silicon Phototransistor
OP570 Series
OP573
DIMENSIONS ARE IN:
[MILLIMETERS]
INCHES
OP570
TOLERANCE IS ± .0039 [0.1]
OP571
OP572
2
1
Pin # Transistor
1 Collector
2 Emitter
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Issue 1.2 02/07
Page 2 of 4
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com

Silicon Phototransistor
OP570 Series
Absolute Maximum Ratings (T A =25°C unless otherwise noted)
Storage Temperature Range
Operating Temperature Range
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector Current
-40 o C to +85 o C
-25 o C to +85 o C
30 V
Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron] 260° C (1)
Power Dissipation 130 mW (2)
Notes:
1. Solder time less than 5 seconds at temperature extreme.
2. Derate linearly at 2.17 mW/° C above 25° C.
Electrical Characteristics (T A = 25°C unless otherwise noted)
SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS
Input Diode
I C (ON) On-State Collector Current 2.5 - - mA V CE = 5.0 V, E E = 5.0 mW/cm 2 (1)
V CE(SAT) Forward Voltage - - 0.4 V I C = 100 µA, E E = 2.0 mW/cm 2 (1)
I CEO Reverse Current - - 100 nA V CE = 5.0 V, E E = 0 (2)
V BR(CEO) Wavelength at Peak Emission 30 - - V I C = 100 µA
V (BR)ECO Emission Angle at Half Power Points 5 - - V I E = 100 µA
Notes:
1. Light source is an unfiltered GaAl LED with a peak emission wavelength of 935nm and a radiometric intensity level which varies less
than 10% over the entire lens surface of the phototransistor being tested.
2. To calculate typical collector dark current in µA, use the formula I CEO = 10 (0.04 Ta-3.4) where Ta is the ambient temperature in ° C.
5 V
20 mA
Relative Collector Current
160%
140%
120%
100%
80%
60%
40%
20%
Relative On-State Collector
Current vs. Irradiance
Normalized at Ee = 5mW/cm 2
Conditions: VCE = 5V,
λ = 935nm, TA = 25 °C
Relative Collector Current
140%
130%
120%
110%
100%
90%
80%
70%
Relative On-State Collector Current
vs. Temperature
Normalized at TA = 25°C .
Conditions: VCE = 5V,
λ = 935nm, TA = 25 °C
0 1.0 2.0 3.0 4.0
Ee—Irradiance (mW/cm 2 )
5.0 6.0 7.0 8.0
-25 0 25 50 75 100
Temperature—(°C)
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue 1.2 02/07
Page 3 of 4

Silicon Phototransistor
OP570 Series
Relative Response
100%
80%
60%
40%
20%
Relative Response vs.
Angular Position
0%
-90 -60 -30 0 30 60 90
Angular Position (Degrees)
IC(ON) - On-State Collector Current (mA)
2.00
1.80
1.60
1.40
1.20
1.00
0.80
0.60
0.40
0.20
Relative On-State Collector Current
vs. Collector-Emitter Voltage
6 mW/cm 2
5 mW/cm 2
4 mW/cm 2
3 mW/cm 2
2 mW/cm 2
1 mW/cm 2
0 0.1 0.2 0.3 0.4 0.5
Collector-Emitter Voltage (V)
1000
Collector-Emitter Dark Current
vs. Temperature
Conditions: Ee = 0 mW/cm 2
VCE = 10V
100%
Relative Response vs. Wavelength
Collector-Emitter Dark Current (nA)
100
10
1
Relative Response
80%
60%
40%
20%
0
-25 0 25 50 75 100
Temperature—(°C)
0%
400
500
600
700
800
Wavelength (nm)
900 1000 1100
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Issue 1.2 02/07
Page 4 of 4
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com