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Candidate material for spintronics<br />
a<br />
20 ì m<br />
B,M<br />
LSMO<br />
[100]<br />
b<br />
CNT<br />
LSMO<br />
c<br />
LSMO<br />
x<br />
CNT<br />
300 nm<br />
Magnetoresistance in device made of LSMO<br />
strips bridged by CNT<br />
L. E. Hueso et al, Nature (in press; cond-mat/0511697)