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Siesta I - Psi-k

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Candidate material for spintronics<br />

a<br />

20 ì m<br />

B,M<br />

LSMO<br />

[100]<br />

b<br />

CNT<br />

LSMO<br />

c<br />

LSMO<br />

x<br />

CNT<br />

300 nm<br />

Magnetoresistance in device made of LSMO<br />

strips bridged by CNT<br />

L. E. Hueso et al, Nature (in press; cond-mat/0511697)

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