IGBT Power Modules

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( ) www.rf-china.com F-Micom co.,Ltd EMail:sales@rf-china.com Tel:0086-592-5713956 Fax:0592-5201617
About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984. Our focus is on high voltage, high power and high performance applications. Our commitment is to maintain and enhance this position as a technological leader in MOS controlled devices and Diodes and to deliver products which contribute to our customers’ success in delivering higher performance power systems. Service… Outstanding technology is only part of the story. A global network of stocking distributors, representatives, applications engineers, and web tools are in place to support all phases of your product design, evaluation and procurement activities. In a world which demands superior execution, we’ve won numerous awards as a service leader. Quality… Our commitment is to excellence in all things we do. Whether you are evaluating the quality of our products, our technical assistance, our customer service or the quality of our internal communications systems, excellence is our standard. Continuous improvement is fundamental to our business! CONTENTS HIGH VOLTAGE SMPS TRANSISTORS Page No. IGBTs (Insulated Gate Bipolar Transistors) ......................................................................3-5 Power MOS 8 TM MOSFETs / FREDFETs ............................................................................6-8 Ultra Low Gate Charge MOSFETs ...................................................................................... 9 COOLMOS TM MOSFETs..................................................................................................... 10 High Voltage Linear MOSFETs ......................................................................................... 10 DIODES Ultra Fast Recovery Diodes ........................................................................................11-13 HIGH VOLTAGE RF MOSFETS ........................................................................................ 14 DRIVERS AND DRIVER-RF MOSFET HYBRIDS ............................................................... 14 HIGH FREQUENCY RF MOSFETS .................................................................................. 15 REFERENCE DESIGN KIT .............................................................................................. 15 POWER MODULES .................................................................................................16-17 IGBTs (Insulated Gate Bipolar Transistors) ................................................................18-22 MOSFETs ....................................................................................................................23-27 Renewable Energy Power Modules ................................................................................. 27 Power Modules with SiCSchottky Diodes ...................................................................28-29 Diodes .......................................................................................................................30-33 Dual IGBT Isolated Driver ................................................................................................ 34 PACKAGE OUTLINE DRAWINGS ..............................................................................35-39 “COOLMOS” comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG” ASPM®, Power MOS V®, Power MOS 7® & T-MAX® are registered trademarks of Microsemi Corporation
Page 1: ( ) www.rf-china.com F-Micom co.,Lt
Page 5 and 6: Insulated Gate Bipolar Transistors
Page 7 and 8: TM Power MOS 8 is a new family of h
Page 9 and 10: Power MOS 8 TM MOSFETs / FREDFETs B
Page 11 and 12: BV DSS R DS(ON) I D(Cont) Package V
Page 13 and 14: Ultra Fast Recovery Diodes I F (avg
Page 15 and 16: High Voltage RF MOSFETs The ARF fam
Page 17 and 18: POWER MODULES Microsemi combines a
Page 19 and 20: IGBT Power Modules CHOPPER AND PHAS
Page 21 and 22: IGBT Power Modules TRIPLE PHASE LEG
Page 23 and 24: IGBT Power Modules SINGLE SWITCH V
Page 25 and 26: MOSFET Power Modules FULL BRIDGE V
Page 27 and 28: MOSFET Power Modules TRIPLE DUAL CO
Page 29 and 30: Frequency (kHz) Power Modules with
Page 31 and 32: DIODE Power Modules SINGLE DIODE V
Page 33 and 34: DIODE Power Modules COMMON CATHODE
Page 35 and 36: Dual IGBT Isolated Driver V ce Max
Page 37 and 38: Power Module Outlines D1 Pin out lo
Page 39 and 40: Power Module Outlines SM1 Pin out l

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