SIPR-9332BE6 Thick Film Positive Photoresist
SIPR-9332BE6 Thick Film Positive Photoresist
SIPR-9332BE6 Thick Film Positive Photoresist
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<strong>SIPR</strong>-<strong>9332BE6</strong><br />
<strong>Thick</strong> <strong>Film</strong><br />
<strong>Positive</strong> <strong>Photoresist</strong><br />
High Thermal Stability<br />
The <strong>SIPR</strong> positive photoresist line has been formulated To give<br />
outstanding results in thicker photoresist <strong>Film</strong>s. Highly vertical<br />
sidewalls are achieved using the <strong>SIPR</strong> one component positive<br />
photoresist. The <strong>SIPR</strong> one component positive photoresist, by<br />
binding sensitizer Covalently to the resin, achieves high<br />
resolution with low optical absorption and high aspect<br />
ratio. <strong>SIPR</strong> positive photoresists have been formulated<br />
to meet the highly demanding applications of thin film<br />
Head manufacturing, high voltage ion implantation And<br />
aggressive etch processing.<br />
DoF (3 µm L/S)345 mJ/cm 2<br />
Dehydration Bake<br />
150°C x 120 sec<br />
HMDS Primed<br />
23°C x 120 sec<br />
Resist Apply<br />
6.0 µm<br />
P.B.<br />
90°C x 120 sec<br />
Exposure<br />
NSR-1755i7A<br />
NA=0.50, σ=0.6<br />
PEB<br />
None<br />
Development<br />
SSFD-238<br />
(2.38% TMAH)<br />
50 sec x 3 times<br />
Linearity (10~1.5 µm)345 mJ/cm 2<br />
Dehydration Bake<br />
150°C x 120 sec<br />
HMDS Primed<br />
23°C x 120 sec<br />
Resist Apply<br />
6.0 µm<br />
P.B.<br />
90°C x 120 sec<br />
Exposure<br />
NSR-1755i7A<br />
NA=0.50, σ=0.6<br />
PEB<br />
None<br />
Development<br />
SSFD-238<br />
(2.38% TMAH) Puddle<br />
50 sec x 3 times<br />
-3 µm<br />
-2 µm ±0 µm<br />
-1 µm<br />
+1 µm +2 µm +3 µm<br />
10 µm 8 µm<br />
6 µm<br />
5 µm<br />
4 µm<br />
3 µm 2 µm<br />
1.5 µm
<strong>SIPR</strong>-<strong>9332BE6</strong><br />
<strong>Thick</strong> <strong>Film</strong><br />
<strong>Positive</strong> <strong>Photoresist</strong><br />
Dehydration Bake:<br />
150°C x 120 sec<br />
HMDS Primed:<br />
23°C x 120 sec<br />
Resist Apply:<br />
6.0 µm<br />
P.B.:<br />
90°C x 120 sec<br />
Exposure:<br />
NSR-1755i7A<br />
NA=0.50, σ=0.6<br />
PEB:<br />
without PEB<br />
Development:<br />
SSFD-238<br />
(2.38% TMAH)<br />
50 sec x 3 times<br />
Line Width (µm)<br />
Eop<br />
Eop<br />
(<strong>Thick</strong>ness: 6.0 µm, 10 µm L/S)<br />
(<strong>Thick</strong>ness: 6.0 µm, 3 µm L/S)<br />
10.6<br />
3.2<br />
10.4<br />
10.2<br />
10.0<br />
9.8<br />
9.6<br />
9.4<br />
290 300<br />
310<br />
320<br />
Dose (mJ/cm 2 )<br />
330<br />
Line Width (µm)<br />
3.0<br />
2.9<br />
320 330<br />
340<br />
601314 Y=13.479-1.06002e-2x R 2 =0.883 601314 Y=5.5020-7.2000e-3x R 2 =0.968<br />
3.1<br />
340<br />
Dose (mJ/cm 2 )<br />
350<br />
360<br />
<strong>Thick</strong>ness (µm)<br />
(PB: 90°C x 120 sec)<br />
8<br />
7<br />
6<br />
5<br />
<strong>Thick</strong>ness<br />
4<br />
1000 2000 3000 4000 5000<br />
Spinning Rate (rpm)<br />
<strong>Thick</strong>ness<br />
6000<br />
(<strong>Thick</strong>ness: 6.0 µm, 3 µm L/S)<br />
4.0<br />
3.8<br />
3.4<br />
3.2<br />
3.0<br />
2.8<br />
2.6<br />
2.4<br />
2.2<br />
Line Width (µm)3.6<br />
DoF<br />
2.0<br />
-4 -2 0 2<br />
Focus (µm)<br />
345 mJ/cm 2 R 2 =0.982<br />
Y=2.9780-8.5929e-2x+2.3929e-2x 2<br />
4<br />
Line Width (µm)<br />
12<br />
10<br />
8<br />
6<br />
4<br />
2<br />
0<br />
Linearity<br />
(<strong>Thick</strong>ness: 6.0µm)<br />
0 2 4 6 8 10 12<br />
Mask Size (µm)<br />
325 mJ/cm 2<br />
10028 South 51 st Street, Phoenix, Arizona 85044<br />
TEL (480) 893- 8898 FAX (480) 893-8637<br />
www.microsi.con
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