Excited state properties p p - WIEN 2k
Excited state properties p p - WIEN 2k
Excited state properties p p - WIEN 2k
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kram<br />
Al.inkram<br />
0.1 broadening gamma<br />
0.0 energy shift (scissors operator)<br />
1 add intraband contributions 1/0<br />
12.6 plasma frequency<br />
0.2 Γ(s) for intraband part<br />
Si.inkram<br />
0.05 broadening gamma<br />
1.00 energy shift (scissors operator)<br />
0<br />
....<br />
80<br />
70 Silicon<br />
60<br />
Imε<br />
50<br />
40<br />
Reε<br />
30<br />
20<br />
10<br />
0<br />
-10<br />
Γ=0.05eV<br />
-20<br />
0 1 2 3 4 5 6<br />
Energy [eV]<br />
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