Tuesday, 3 May 2011 - CLEO

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Ballroom Foyer JOINT JTuI • Nanophotonics and Integration Joint Poster Session—Continued JTuI62 Measurement of Plasmon Response Functions with Cross-correlation Imaging using Femtosecond Laser Dark-field Microscopy, Jun Oi 1 ; 1 Electronics and Electrical Engineering, Keio Univ., Japan. We demonstrate an electrical-field cross-correlation imaging technique to obtain a response function of localized plasmon. Based on the measured response functions, we spatiotemporally shape the plasmon by shaping the femtosecond excitation pulses. JTuI63 Resonant plasmon-exciton coupling in zinc oxide quantum well-aluminum nanodisc heterostructure arrays, Benjamin Lawrie 1 , Kyeong- Won Kim 2 , David Norton 2 , Richard Mu 3 , Richard F. Haglund 4 ; 1 Interdisciplinary Materials Science, Vanderbilt Univ., USA; 2 Department of Materials Science and Engineering, Univ. of Florida, USA; 3 Department of Physics, Fisk Univ., USA; 4 Department of Physics and Astronomy, Vanderbilt Univ., USA. The emergence of Fano resonances in the extinction spectra of arrays of aluminum nanodiscs 30 - 200 nm in diameter deposited on [Zn,Mg]O quantum wells provide the first evidence of strong coupling in zinc oxide heterostructures. JTuI64 Eigen mode Approach to the Sub-wavelength Imaging with Surface Plasmon Polaritons, Beibei Zhang 1 , Jacob B. Khurgin 1 ; 1 Johns Hopkins Univ., USA. We develop a novel physically transparent model that establishes unequivocal connection between surface plasma polariton (SPP) modes and sub-wavelength imaging in the super-lens, and use it to analyze the modulation transfer function. JTuI65 Plasmon tomography images of two-dimensional periodic structures, Charles Regan 1 , Ananth Krishnan 3 , Luis Grave de Peralta 2 , Ayrton Bernussi 1 ; 1 Electrical and Computer Engineering, Texas Tech Univ., USA; 2 Physics, Texas Tech Univ., USA; 3 Electrical Engineering, I.I.T. Madras, India. Direct tomography imaging of the reciprocal lattice of plasmonic crystals shows clear isofrequency dispersion directional gaps. The relation between the Fourier plane image and the First Brillouin Zone allows for simple prediction of stop bands. JTuI66 High sensitivity plasmonic index sensor using slab-like gold nanoring array, Chia-Yang Tsai 1 , Shao-Ping Lu 1 , Jyun-Wei Lin 1 , Po-Tsung Lee 1 ; 1 Department of Photonics & Inst. of Electro-Optical Engineering, National Chiao Tung Univ., Taiwan. We investigate the index sensing characteristics of plasmonic arrays based on square lattice slab-like gold nanorings with different ring widths. High sensitivity of 691 nm per RIU is obtained for nanorings with 199 nm width. JTuI67 Directional Selectivity through the Subwavelength Slit in Metallic Gratings, Semih Cakmakyapan 1 , Humeyra Caglayan 1 , Andriy Serebryannikov 2 , Ekmel Ozbay 1 ; 1 Physics, Bilkent Univ., Turkey; 2 Technische Universitaet Hamburg, Germany. An approach for obtaining strong directional selectivity through a single subwavelength slit in non-symmetric metallic gratings is shown theoretically and experimentally. Directionality effect originates from the different resonance frequencies of two interfaces. JTuI68 Plasmonic Nanostructures for Angle Selective Photovoltaics, Brian Roberts 1 , Pei-Cheng Ku 1 ; 1 Electrical Engineering and Computer Science, Univ. of Michigan, USA. We describe an angular selective photovoltaic window, designed to transmit normally incident light and absorb off-angle light by exploiting an anisotropic plasmonic nanostructure. Principles of operation and numerical simulations are presented. CLEO Science & Innovations 9: Components, Integration, Interconnects and Signal Processing JTuI69 Experimental Observation of the Coupling between Short-Rang SPP and Dielectric Waveguide Mode, Ruiyuan Wan 1 , Fang Liu 1 , Shuai Hu 1 , Boyu Fan 1 , Yidong Huang 1 ; 1 Electronic Engineering, Tsinghua Univ., China. The highly efficient coupling between the short range surface plasmon polariton (SRSPP) and conventional dielectric waveguide mode was observed. Based on this coupling, the SRSPP mode can be applied for novel integrated optoelectronic devices. JTuI70 Experimental Characterization of Simultaneous Gain Pumping and Depletion in a Semiconductor Optical Amplifier, Yue Tian 1 , Mable P Fok 1 , Paul R. Prucnal 1 ; 1 Electrical Engineering, Princeton Univ., USA. We experimentally characterize gainpumping in a semiconductor optical amplifier and combine gain-pumping and gain-depletion effects that can enable complex all-optical signal processing functions. JTuI71 Flap-Top Interleaver by Femtosecond Laser Writing of Cascaded Mach-Zehnder Interferometers in Fused Silica, Jason C. Ng 1 , Chengbo Li 1 , Peter R. Herman 1 , Li Qian 1 ; 1 Electrical and Computer Engineering, Univ. of Toronto, Canada. Femtosecond laser writing of cascaded Mach- Zehnder interferometers were optimized in fused silica to form flat-top interleavers with 0.5-dB bandwidth of 10 nm and 15 dB extinction ratio that opens new directions in wavelength division multiplexing. JTuI72 MEMS spatial light modulator for spectral phase and amplitude modulation, Jonathan Dunayevsky 1 , David Sinefeld 1 , Dan M. Marom 1 ; 1 Applied Physics, Hebrew Univ., Israel. We present a new Micro-Electro-Mechanical-System spatial light modulator with micromirrors designed to piston. This diffractive MEMS modulator is to be used for independently applying amplitude attenuation and phase control along one dimension. JTuI73 Electro Thermal and Electro Statical Actuation of a Surface Micromachined Tunable Fabry- Pérot Filter, Christian Gierl 1 , Karolina Zogal 1 , Hooman A. Davani 1 , Peter Meissner 1 ; 1 Optische Nachrichtentechnik, Technische Universität Darmstadt, Germany. We present a surface micromachined electro-thermal as well as electro-statical tunable Fabry-Pérot filter for on wafer mass production. With insertion losses
Ballroom Foyer JOINT JTuI • Nanophotonics and Integration Joint Poster Session—Continued Tuesday, 3 May JTuI80 Measurements on a Single Crystal Photo-Elastic Modulator, Ferdinand Bammer 1 , Rok Petkovsek 2 , Jaka Petelin 2 ; 1 Inst. for Production Engineering and Laser Technology, Vienna Univ. of Technology, Austria; 2 Faculty of Mechanical Engineering, Univ. of Ljubljana, Slovenia. The displacement-amplitudes of a Single Crystal Photo-Elastic Modulator is measured with interferometry and the underlying theory verified. The retardation- and the currentamplitude are linearly correlated. Current controls the crystal retardation. CLEO: Science & Innovations 3: Semiconductor Lasers JTuI81 Suppression of Filamentation in Semiconductor Lasers via Carrier-Induced Wavefront Tilt, Jordan Leidner 1 , John Marciante 1 ; 1 The Inst. of Optics, Univ. of Rochester, USA. An analytic model demonstrates filamentation suppression via tilted optical wavefront induced by transverse profiling the injection current. Numerical simulations show a significant collapse of the far field and a 67% increase in device brightness. JTuI82 Transformation of Self-Feedback Weak-Resonant-Cavity Fabry-Perot Laser Diode Pulsation from Gain-Switching to Mode-Locking under Direct Modulation at 10 GHz, Yi-Cheng Lee 1 , Gong-Ru Lin 1 ; 1 National Taiwan Univ., Taiwan. Pulsation of a self-feedback WRC-FPLD transferring from gain-switching to harmonic mode-locking is demonstrated under 10-GHz direct-modulation, which results in a 12-ps pulsetrain with 20-dB longitudinal mode suppression and 7 dB mode extinction. JTuI83 Design of Optical Pulse Envelope Ring Oscillator (OPERO) and fabrication in Generic InP technology, Pieter I. Kuindersma 1,2 ; 1 COBRA Inst., TUE, Netherlands; 2 TUE, COBRA Inst., Netherlands. A new clock pulse generator is a non-lasing, low threshold (~100mA), high efficiency(~ 4mW/ mA) semiconductor Optical Pulse Envelope Ring Oscillator (‘OPERO’) circuit, containing two crosscoupled SOA sub linear wavelength converters. JTuI84 Optically pumped room temperature InAs/In- GaAsP microtube laser operating near 1.55 μm, Pablo Bianucci 1 , Shouvik Mukherjee 1 , Philip Poole 2 , Zetian Mi 1 ; 1 Electrical and Computer Engineering, McGill Univ., Canada; 2 Inst. for Microstructural Sciences, National Research Council of Canada, Canada. We present an optically pumped InGaAsP microtube laser operating in the 1.64 μm wavelength range with InAs quantum dots as the gain medium. We observe room temperature continuous wave operation and a 4 μW threshold. JTuI85 Strained Germanium Membrane using Thin Film Stressor for High Efficiency Laser, Donguk Nam 1 , Arunanshu Roy 1 , Kevin Huang 1 , Mark Brongersma 2 , Krishna Saraswat 1 ; 1 Electrical Engineering, Stanford Univ., USA; 2 Materials Science and Engineering, Stanford Univ., USA. A novel method to introduce more than 0.6% biaxial tensile strain and achieve a 60meV direct band gap reduction in epitaxially grown germanium is demonstrated. Possible applications include high efficiency germanium lasers on silicon substrates. JTuI86 Modal gain and time-resolved photoluminescence of Ga(NAsP) heterostructures pseudomorphically grown on Silicon (001) substrate, Nektarios Koukourakis 1 , Dominic A. Funke 1 , Nils C. Gerhardt 1 , Martin R. Hofmann 1 , Bernardette Kunert 3 , Sven Liebich 2 , Daniel Trusheim 2 , Christina Bückers 2 , Martin Zimprich 2 , Stephan W. Koch 2 , Kerstin Volz 2 , Wolfgang Stolz 2 ; 1 Photonics and terahertz technology, Ruhr-Univ. Bochum, Germany; 2 Physics and material sciences center, Philips-Univ. Marburg, Germany; 3 NAsP III/V, Germany. We present room-temperature gain (up to 80 cm -1 ) and time-resolved photoluminescence measurements in Ga(NAsP) grown lattice-matched on silicon substrate. We find a strong impact of the barrier-growth conditions on the optical quality of the material. JTuI87 Sequence of Events During the Catastrophic Optical Damage in Broad-Area Lasers, Jens W. Tomm 1 , Martin Hempel 1 , Thomas Elsässer 1 ; 1 C, Max-Born-Institut, Germany. Kinetics of catastrophic optical damage is monitored for 650, 808, and 980 nm emitting diode lasers. The powerdecay time-constants after degradation increase with wavelength pinpointing the better thermal properties of 980 nm waveguide materials. JTuI88 Carrier Dynamics in Catastrophic Optical Bulk Damaged InGaAs-AlGaAs Strained QW Broad-Area Lasers, Yongkun Sin 1 , Stephen D. LaLumondiere 1 , William T. Lotshaw 1 , Neil Ives 1 , Steven C. Moss 1 ; 1 Electronics and Photonics Lab, The Aerospace Corporation, USA. We investigated catastrophic optical bulk damage in high power broad-area InGaAs strained quantum well lasers with windowed n-contacts using time-resolved EL and transient PL techniques. JTuI89 High Speed 980 nm VCSELs for Short Reach Optical Interconnects Operating Error-Free at 25 Gbit/s up to 85 °C, Alex Mutig 1 , James A. Lott 2 , Sergey A. Blokhin 1,3 , Philip Moser 1 , Philip Wolf 1 , Werner Hofmann 1 , Alexey Nadtochiy 1,3 , Dieter Bimberg 1 ; 1 Institut für Festkörperphysik und Zentrum für Nanophotonik, Technische Universität Berlin, Germany; 2 VI Systems GmbH, Germany; 3 Saint Petersburg Physical Technological Centre for Research and Education of the RAS and the Ioffe Physical-Technical Inst. of the RAS, Russian Federation. We present 980 nm VCSELs operating error-free at a bit rate of 25 Gbit/s at temperatures of up to 85 °C. These devices are advantageous for future optical interconnects in high performance computer applications. JTuI90 High Speed Modulation of a 1.55-μm MEMStunable VCSEL, Karolina Zogal 1 , Tobias Gruendl 2 , Hooman A. Davani 1 , Christian Gierl 1 , Sandro Jatta 1 , Christian Grasse 2 , Markus C. Amann 2 , Peter Meissner 1 ; 1 Optical Communication, Technische Universitaet Darmstadt, Germany; 2 Walter Schottky Institut, Technische Universitaet Muenchen, Germany. The dynamics of the micromachined-tunable surface-emitting laser are derived from amplitude modulation response. The dependence of resonance frequency on bias current and wavelength is reported. The device shows 3-dB modulation frequency above 6 GHz. JTuI91 Investigation of the Stability of Microwave Oscillations in an Optically Injected 1550nm- VCSEL, Kevin R. Schires 1 , Antonio Hurtado 1 , Ian D. Henning 1 , Michael J. Adams 1 ; 1 School of Computer science and Electronic Engineering, Univ. of Essex, UK. A novel experimental technique based on the study in the phase plane of real-time series is used for a first experimental analysis of the stability of period-one microwave frequency oscillations generated with an optically-injected 1550nm-VCSEL. JTuI92 Optically-pumped circularly polarized lasing in a (110) VCSEL with GaAs/AlGaAs QWs at room temperature, Satoshi Iba 1 , Shinji Koh 1 , Kazuhiro Ikeda 1 , Hitoshi Kawaguchi 1 ; 1 Graduate School of Materials Science, Nara Inst. of Science and Technology, Japan. We have successfully fabricated a (110)-VCSEL with GaAs/AlGaAs QWs and achieved circularly-polarized lasing with a high degree of circular polarization of 0.96 at room temperature, reflecting a long spin relaxation time in (110) GaAs/AlGaAs QWs. JTuI93 High Reflectivity Subwavelength Metal Grating for VCSEL Applications, Ruiyuan Wan 1,2 , Vadim Karagodsky 2 , Connie J. Chang-Hasnain 2 ; 1 Department of electronic engineering, Tsinghua Univ., China; 2 Department of Electrical Engineering and Computer Sciences, Univ. of California, Berkeley, USA. We report theoretical simulation of a novel silver subwavelength grating with reflectivity>99.5%, substantially higher than uniform thin film, and a 99%-reflectivity bandwidth of 190nm, promising for VCSELs and surface-normal optoelectronic devices. JTuI94 Method for Measuring Reflectance of Semiconductor Disk Laser Gain Element Under Optical Pump Excitation, Carl Borgentun 1 , Jörgen Bengtsson 1 , Anders Larsson 1 ; 1 Photonics Lab, Department of Microtechnology and Nanoscience (MC2), Sweden. We present a new measurement method for measuring the spectral reflectance of a semiconductor disk laser gain element under optical pumping, providing valuable information on the spectral dependence of gain under closeto-normal operating conditions. JTuI95 High-Speed Wavelength Modulation in Quantum Cascade Laser, Gang Chen 1,2 , Rainer Martini 2 , Tao Yang 2 , Peter Grant 3 , Richard Dudek 3 , Hui Chun Liu 3 ; 1 School of Optoelectronic Engineering, Chongqing Univ., China; 2 Department of Physics and Engineering Physics, Stevens Inst. of Technology, USA; 3 Inst. for Microstructural Sciences, National Research Council, Canada. High-speed wavelength modulation is demonstrated in a standard middleinfrared quantum cascade laser by near-infrared optical excitation. The typical wavelength modulation spectrum is obtained, which is observed at frequency up to 1.6 GHz. JTuI96 Gain to Absorption Ratio of Self-Induced Transparency Modelocked Quantum Cascade Lasers, Muhammad Talukder 1 , Curtis Menyuk 1 ; 1 UMBC, USA. A model to calculate the gain to absorption ratio of self-induced transparency modelocked quantum cascade lasers is presented and then used to find the gain to absorbing periods ratio that is required for stable operation. JTuI97 Inefficient Coherent Carrier Transport in Quantum Cascade Lasers at High Temperature, Muhammad Talukder 1 , Curtis Menyuk 1 ; 1 UMBC, USA. We show that coherent carrier transport in quantum cascade lasers (QCLs) decreases as temperature increases due to a corresponding decrease in the quantum coherence time between the injector and active region levels. JTuI98 Design of Laser Transition Oscillator Strength for THz Quantum Cascade Lasers, Saeed Fathololoumi 1,2 , Emmanuel Dupont 1 , Sylvain R. Laframboise 1 , Zbigniew R. Wasilewski 1 , Dayan Ban 2 , Hc Liu 1 ; 1 IMS, National research council of Cand, Canada; 2 Electrical and Computer Engineering, Univ. of Waterloo, Canada. The density matrix based model is employed to design number of THz quantum cascade lasers with various laser oscillator strengths. The optimum oscillator strength varies between 0.35 and 0.47. Experimental results verify the theory. JTuI99 Room-temperature operation of λ≈2.95μm In 0.67 Ga 0.33 As/ Al 0.57 In 0.43 As quantum cascade laser source based on intra-cavity second harmonic generation, Min Jang 1 , Xiaojun Wang 2 , Mariano Troccoli 2 , Mikhail Belkin 1 ; 1 ECE, Univ. of Texas at Austin, USA; 2 Adtech Optics, Inc., USA. We report λ≈2.95μm strain-compensated QCL source based on intra-cavity second harmonic generation. The laser operates in pulsed mode at 298K with J th =2.7kA/cm 2 and provides 30μW of second-harmonic radiation with 0.1mW/W 2 conversion efficiency. JTuI100 Modal Gain, Loss, and Thermal Resistance of a Metamorphic GaSb-Based Laser in Room- Temperature Continuous-Wave Operation at 2 μm, Paveen Apiratikul 1 , Lei He 1 , Christopher Richardson 1 ; 1 Lab for Physical Sciences, USA. We report a metamorphic type-I GaSb-based laser grown on a GaAs substrate that operates continuous wave at room temperature with low internal loss and low thermal resistance compared to pseudomorphic lasers. JTuI101 The antiguiding parameter in mid-infrared optically pumped semiconductor lasers, Andrew Ongstad 1 ; 1 Air Force Research Lab, USA. We describe measurements of the antiguiding parameter for several mid-infrared optically pumped W lasers. The symmetrical gain spectra induced by homogenous broadening resulted in small differential index and hence low antiguiding values of ~1. CLEO: Science & Innovations 1: Laser Processing of Materials: Fundamentals and Applications JTuI102 Fabrication of microstructures containing Au nanoparticles for optical and photonic applications, Vinicius Tribuzi 1 , Adriano J. Otuka 1 , Paulo Ferreira 1 , Daniel S. Correa 1 , Cleber Mendonca 1 ; 1 Univ. of Sao Paulo - Inst. of Physics of Sao Carlos - Photonics Group, Brazil. Methods for fabricating doped microstructures have been recently developed. In this work, we developed a method for fabricating microstructures, by two-photon absorption polymerization, containing gold nanoparticles. 124 CLEO: 2011 • 1–6 May 2011
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Tuesday, 3 May 2011 - CLEO

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