Tuesday, 3 May 2011 - CLEO

Ballroom Foyer
JOINT
JTuI • Nanophotonics and Integration Joint Poster Session—Continued
Tuesday, 3 May
JTuI80
Measurements on a Single Crystal Photo-Elastic
Modulator, Ferdinand Bammer 1 , Rok Petkovsek 2 ,
Jaka Petelin 2 ; 1 Inst. for Production Engineering and
Laser Technology, Vienna Univ. of Technology, Austria;
2 Faculty of Mechanical Engineering, Univ. of
Ljubljana, Slovenia. The displacement-amplitudes
of a Single Crystal Photo-Elastic Modulator is
measured with interferometry and the underlying
theory verified. The retardation- and the currentamplitude
are linearly correlated. Current controls
the crystal retardation.
CLEO: Science & Innovations 3:
Semiconductor Lasers
JTuI81
Suppression of Filamentation in Semiconductor
Lasers via Carrier-Induced Wavefront Tilt,
Jordan Leidner 1 , John Marciante 1 ; 1 The Inst. of
Optics, Univ. of Rochester, USA. An analytic model
demonstrates filamentation suppression via tilted
optical wavefront induced by transverse profiling
the injection current. Numerical simulations show
a significant collapse of the far field and a 67%
increase in device brightness.
JTuI82
Transformation of Self-Feedback Weak-Resonant-Cavity
Fabry-Perot Laser Diode Pulsation
from Gain-Switching to Mode-Locking
under Direct Modulation at 10 GHz, Yi-Cheng
Lee 1 , Gong-Ru Lin 1 ; 1 National Taiwan Univ.,
Taiwan. Pulsation of a self-feedback WRC-FPLD
transferring from gain-switching to harmonic
mode-locking is demonstrated under 10-GHz
direct-modulation, which results in a 12-ps pulsetrain
with 20-dB longitudinal mode suppression
and 7 dB mode extinction.
JTuI83
Design of Optical Pulse Envelope Ring Oscillator
(OPERO) and fabrication in Generic InP
technology, Pieter I. Kuindersma 1,2 ; 1 COBRA Inst.,
TUE, Netherlands; 2 TUE, COBRA Inst., Netherlands.
A new clock pulse generator is a non-lasing,
low threshold (~100mA), high efficiency(~ 4mW/
mA) semiconductor Optical Pulse Envelope Ring
Oscillator (‘OPERO’) circuit, containing two crosscoupled
SOA sub linear wavelength converters.
JTuI84
Optically pumped room temperature InAs/In-
GaAsP microtube laser operating near 1.55 μm,
Pablo Bianucci 1 , Shouvik Mukherjee 1 , Philip Poole 2 ,
Zetian Mi 1 ; 1 Electrical and Computer Engineering,
McGill Univ., Canada; 2 Inst. for Microstructural
Sciences, National Research Council of Canada,
Canada. We present an optically pumped InGaAsP
microtube laser operating in the 1.64 μm wavelength
range with InAs quantum dots as the gain
medium. We observe room temperature continuous
wave operation and a 4 μW threshold.
JTuI85
Strained Germanium Membrane using Thin
Film Stressor for High Efficiency Laser, Donguk
Nam 1 , Arunanshu Roy 1 , Kevin Huang 1 , Mark Brongersma
2 , Krishna Saraswat 1 ; 1 Electrical Engineering,
Stanford Univ., USA; 2 Materials Science and Engineering,
Stanford Univ., USA. A novel method to
introduce more than 0.6% biaxial tensile strain
and achieve a 60meV direct band gap reduction
in epitaxially grown germanium is demonstrated.
Possible applications include high efficiency germanium
lasers on silicon substrates.
JTuI86
Modal gain and time-resolved photoluminescence
of Ga(NAsP) heterostructures pseudomorphically
grown on Silicon (001) substrate,
Nektarios Koukourakis 1 , Dominic A. Funke 1 , Nils
C. Gerhardt 1 , Martin R. Hofmann 1 , Bernardette
Kunert 3 , Sven Liebich 2 , Daniel Trusheim 2 , Christina
Bückers 2 , Martin Zimprich 2 , Stephan W. Koch 2 ,
Kerstin Volz 2 , Wolfgang Stolz 2 ; 1 Photonics and terahertz
technology, Ruhr-Univ. Bochum, Germany;
2
Physics and material sciences center, Philips-Univ.
Marburg, Germany; 3 NAsP III/V, Germany. We
present room-temperature gain (up to 80 cm -1 )
and time-resolved photoluminescence measurements
in Ga(NAsP) grown lattice-matched on
silicon substrate. We find a strong impact of the
barrier-growth conditions on the optical quality
of the material.
JTuI87
Sequence of Events During the Catastrophic
Optical Damage in Broad-Area Lasers, Jens
W. Tomm 1 , Martin Hempel 1 , Thomas Elsässer 1 ;
1
C, Max-Born-Institut, Germany. Kinetics of
catastrophic optical damage is monitored for 650,
808, and 980 nm emitting diode lasers. The powerdecay
time-constants after degradation increase
with wavelength pinpointing the better thermal
properties of 980 nm waveguide materials.
JTuI88
Carrier Dynamics in Catastrophic Optical
Bulk Damaged InGaAs-AlGaAs Strained QW
Broad-Area Lasers, Yongkun Sin 1 , Stephen D.
LaLumondiere 1 , William T. Lotshaw 1 , Neil Ives 1 ,
Steven C. Moss 1 ; 1 Electronics and Photonics Lab,
The Aerospace Corporation, USA. We investigated
catastrophic optical bulk damage in high power
broad-area InGaAs strained quantum well lasers
with windowed n-contacts using time-resolved EL
and transient PL techniques.
JTuI89
High Speed 980 nm VCSELs for Short Reach
Optical Interconnects Operating Error-Free
at 25 Gbit/s up to 85 °C, Alex Mutig 1 , James A.
Lott 2 , Sergey A. Blokhin 1,3 , Philip Moser 1 , Philip
Wolf 1 , Werner Hofmann 1 , Alexey Nadtochiy 1,3 ,
Dieter Bimberg 1 ; 1 Institut für Festkörperphysik und
Zentrum für Nanophotonik, Technische Universität
Berlin, Germany; 2 VI Systems GmbH, Germany;
3
Saint Petersburg Physical Technological Centre
for Research and Education of the RAS and the
Ioffe Physical-Technical Inst. of the RAS, Russian
Federation. We present 980 nm VCSELs operating
error-free at a bit rate of 25 Gbit/s at temperatures
of up to 85 °C. These devices are advantageous for
future optical interconnects in high performance
computer applications.
JTuI90
High Speed Modulation of a 1.55-μm MEMStunable
VCSEL, Karolina Zogal 1 , Tobias Gruendl 2 ,
Hooman A. Davani 1 , Christian Gierl 1 , Sandro
Jatta 1 , Christian Grasse 2 , Markus C. Amann 2 , Peter
Meissner 1 ; 1 Optical Communication, Technische
Universitaet Darmstadt, Germany; 2 Walter Schottky
Institut, Technische Universitaet Muenchen, Germany.
The dynamics of the micromachined-tunable
surface-emitting laser are derived from amplitude
modulation response. The dependence of resonance
frequency on bias current and wavelength
is reported. The device shows 3-dB modulation
frequency above 6 GHz.
JTuI91
Investigation of the Stability of Microwave
Oscillations in an Optically Injected 1550nm-
VCSEL, Kevin R. Schires 1 , Antonio Hurtado 1 , Ian D.
Henning 1 , Michael J. Adams 1 ; 1 School of Computer
science and Electronic Engineering, Univ. of Essex,
UK. A novel experimental technique based on
the study in the phase plane of real-time series
is used for a first experimental analysis of the
stability of period-one microwave frequency
oscillations generated with an optically-injected
1550nm-VCSEL.
JTuI92
Optically-pumped circularly polarized lasing
in a (110) VCSEL with GaAs/AlGaAs QWs at
room temperature, Satoshi Iba 1 , Shinji Koh 1 ,
Kazuhiro Ikeda 1 , Hitoshi Kawaguchi 1 ; 1 Graduate
School of Materials Science, Nara Inst. of Science
and Technology, Japan. We have successfully fabricated
a (110)-VCSEL with GaAs/AlGaAs QWs
and achieved circularly-polarized lasing with a
high degree of circular polarization of 0.96 at room
temperature, reflecting a long spin relaxation time
in (110) GaAs/AlGaAs QWs.
JTuI93
High Reflectivity Subwavelength Metal Grating
for VCSEL Applications, Ruiyuan Wan 1,2 ,
Vadim Karagodsky 2 , Connie J. Chang-Hasnain 2 ;
1
Department of electronic engineering, Tsinghua
Univ., China; 2 Department of Electrical Engineering
and Computer Sciences, Univ. of California,
Berkeley, USA. We report theoretical simulation of
a novel silver subwavelength grating with reflectivity>99.5%,
substantially higher than uniform thin
film, and a 99%-reflectivity bandwidth of 190nm,
promising for VCSELs and surface-normal optoelectronic
devices.
JTuI94
Method for Measuring Reflectance of Semiconductor
Disk Laser Gain Element Under
Optical Pump Excitation, Carl Borgentun 1 ,
Jörgen Bengtsson 1 , Anders Larsson 1 ; 1 Photonics Lab,
Department of Microtechnology and Nanoscience
(MC2), Sweden. We present a new measurement
method for measuring the spectral reflectance of
a semiconductor disk laser gain element under
optical pumping, providing valuable information
on the spectral dependence of gain under closeto-normal
operating conditions.
JTuI95
High-Speed Wavelength Modulation in Quantum
Cascade Laser, Gang Chen 1,2 , Rainer Martini 2 ,
Tao Yang 2 , Peter Grant 3 , Richard Dudek 3 , Hui
Chun Liu 3 ; 1 School of Optoelectronic Engineering,
Chongqing Univ., China; 2 Department of Physics
and Engineering Physics, Stevens Inst. of Technology,
USA; 3 Inst. for Microstructural Sciences, National
Research Council, Canada. High-speed wavelength
modulation is demonstrated in a standard middleinfrared
quantum cascade laser by near-infrared
optical excitation. The typical wavelength modulation
spectrum is obtained, which is observed at
frequency up to 1.6 GHz.
JTuI96
Gain to Absorption Ratio of Self-Induced Transparency
Modelocked Quantum Cascade Lasers,
Muhammad Talukder 1 , Curtis Menyuk 1 ; 1 UMBC,
USA. A model to calculate the gain to absorption
ratio of self-induced transparency modelocked
quantum cascade lasers is presented and then used
to find the gain to absorbing periods ratio that is
required for stable operation.
JTuI97
Inefficient Coherent Carrier Transport in
Quantum Cascade Lasers at High Temperature,
Muhammad Talukder 1 , Curtis Menyuk 1 ; 1 UMBC,
USA. We show that coherent carrier transport
in quantum cascade lasers (QCLs) decreases as
temperature increases due to a corresponding
decrease in the quantum coherence time between
the injector and active region levels.
JTuI98
Design of Laser Transition Oscillator Strength
for THz Quantum Cascade Lasers, Saeed
Fathololoumi 1,2 , Emmanuel Dupont 1 , Sylvain R.
Laframboise 1 , Zbigniew R. Wasilewski 1 , Dayan
Ban 2 , Hc Liu 1 ; 1 IMS, National research council of
Cand, Canada; 2 Electrical and Computer Engineering,
Univ. of Waterloo, Canada. The density matrix
based model is employed to design number of THz
quantum cascade lasers with various laser oscillator
strengths. The optimum oscillator strength
varies between 0.35 and 0.47. Experimental results
verify the theory.
JTuI99
Room-temperature operation of λ≈2.95μm
In 0.67 Ga 0.33 As/ Al 0.57 In 0.43 As quantum cascade
laser source based on intra-cavity second harmonic
generation, Min Jang 1 , Xiaojun Wang 2 ,
Mariano Troccoli 2 , Mikhail Belkin 1 ; 1 ECE, Univ. of
Texas at Austin, USA; 2 Adtech Optics, Inc., USA.
We report λ≈2.95μm strain-compensated QCL
source based on intra-cavity second harmonic
generation. The laser operates in pulsed mode
at 298K with J th =2.7kA/cm 2 and provides 30μW
of second-harmonic radiation with 0.1mW/W 2
conversion efficiency.
JTuI100
Modal Gain, Loss, and Thermal Resistance of
a Metamorphic GaSb-Based Laser in Room-
Temperature Continuous-Wave Operation at
2 μm, Paveen Apiratikul 1 , Lei He 1 , Christopher
Richardson 1 ; 1 Lab for Physical Sciences, USA. We
report a metamorphic type-I GaSb-based laser
grown on a GaAs substrate that operates continuous
wave at room temperature with low internal
loss and low thermal resistance compared to
pseudomorphic lasers.
JTuI101
The antiguiding parameter in mid-infrared
optically pumped semiconductor lasers, Andrew
Ongstad 1 ; 1 Air Force Research Lab, USA.
We describe measurements of the antiguiding
parameter for several mid-infrared optically
pumped W lasers. The symmetrical gain spectra
induced by homogenous broadening resulted in
small differential index and hence low antiguiding
values of ~1.
CLEO: Science & Innovations 1:
Laser Processing of Materials:
Fundamentals and Applications
JTuI102
Fabrication of microstructures containing Au
nanoparticles for optical and photonic applications,
Vinicius Tribuzi 1 , Adriano J. Otuka 1 , Paulo
Ferreira 1 , Daniel S. Correa 1 , Cleber Mendonca 1 ;
1
Univ. of Sao Paulo - Inst. of Physics of Sao Carlos
- Photonics Group, Brazil. Methods for fabricating
doped microstructures have been recently
developed. In this work, we developed a method
for fabricating microstructures, by two-photon
absorption polymerization, containing gold
nanoparticles.
124
CLEO: 2011 • 1–6 May 2011