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A <strong>Low</strong>-<strong>Voltage</strong> <strong>High</strong>-<strong>Frequency</strong> <strong>CMOS</strong> <strong>LC</strong>-<strong>VCO</strong><br />

<strong>Using</strong> a Transformer Feedback<br />

RTU4B-4<br />

Chih-Hsiang Chang and Ching-Yuan Yang<br />

Department of Electrical Engineering, National Chung Hsing University<br />

250, Kuo-Kuang Road, Taichung, Taiwan 40254<br />

Abstract — The paper describes a 0.18-μm <strong>CMOS</strong><br />

8.5-GHz <strong>LC</strong>-tank <strong>VCO</strong> using a technique of reducing<br />

parasitic capacitances. Compared to the traditional crossed<br />

coupled method with more parasitic capacitances, in this<br />

work a symmetry transformer introduced by a transformer<br />

on feedback currents from the active components is<br />

employed to reduce parasitic capacitances in the <strong>VCO</strong>. The<br />

proposed oscillator can easily arrive at the requirement for<br />

high-frequency operation with the tuning range of 8.32 to<br />

8.75 GHz (5%) at 0.7 V supply. With operating at 8.5-GHz<br />

frequency, the measured phase noise is -121.6 dBc/Hz at<br />

1-MHz offset under the power dissipation of 6 mW.<br />

M n1<br />

0 0<br />

Mn2<br />

I. INTRODUCTION<br />

<strong>LC</strong>-tank voltage-controlled oscillators (<strong>VCO</strong>s) are<br />

widely used in RF communication systems, particularly<br />

in applications of phase-locked loops (PLLs). The<br />

performance of <strong>LC</strong>-based oscillators heavily depends on<br />

the quality of inductors and capacitors. A general<br />

oscillation frequency of <strong>LC</strong> topologies is equal to<br />

( 2π<br />

<strong>LC</strong> )<br />

f osc<br />

= 1/ , suggesting that only the inductor and<br />

capacitor values can be varied to tune the frequency.<br />

Since it is difficult to vary the value of monolithic<br />

inductors, we simply change the tank capacitance to tune<br />

the oscillator. Thus, the resonant capacitances of the <strong>LC</strong><br />

tank can be simplified to be regarded as the sum of<br />

constant capacitances and tunable ones. The former are<br />

mainly made of the parasitic capacitances of the inductor,<br />

the varactor and the transistors, and further limit the<br />

tuning range even reduce the operation frequencies<br />

because they cannot be varied by the control voltage. In<br />

order to maximize both the tuning range and the<br />

operating frequencies, constant capacitances in the tank<br />

must be minimized.<br />

In this paper, a technique to reduce parasitic<br />

capacitances is developed for a high-frequency low-noise<br />

<strong>LC</strong>-<strong>VCO</strong> design by using a symmetry transformer. In this<br />

way, the limitation between the dynamic range and the<br />

operating frequency can be mitigated while extracting a<br />

higher frequency output signal.<br />

II.<br />

PROPOSED <strong>LC</strong>-<strong>VCO</strong> IMPLEMENTATION<br />

A. Traditional <strong>LC</strong> Oscillator<br />

A general <strong>LC</strong>-oscillator circuit scheme is shown in<br />

Fig.1 [2],[3],[4]. The cross-connection of an NMOS<br />

(M n1<br />

-M n2<br />

) differential pair in positive feedback generates<br />

Fig. 1 One traditional <strong>LC</strong>-<strong>VCO</strong><br />

a negative resistance to compensate the parasitic parallel<br />

resistance of <strong>LC</strong> tank for oscillation to occur. The<br />

capacitances of the tank can be formed from an effective<br />

parasitic capacitor (C p<br />

) and a varactor. The frequencytuning<br />

varactor is represented as a voltage-controlled<br />

variable capacitor (C V<br />

) in shunt with a non-variable<br />

capacitor (C 0<br />

).<br />

With the transistor dimensions and tank inductance<br />

value known, the capacitance in the varactor can be<br />

calculated. Since:<br />

ω = 1/ L× C<br />

(1)<br />

osc<br />

and all contributions to C toto<br />

can be identify as:<br />

toto<br />

( 4<br />

0 )<br />

C = C + C + C + C + C + C , (2)<br />

if follows that<br />

toto GS DB GD p V<br />

1<br />

C = − ( C + C + 4 C + C ) −C<br />

. (3)<br />

V GS DB GD 0 p<br />

ωosc<br />

× L<br />

Thus, the resonant capacitances of the <strong>LC</strong> tank can be<br />

simplified to be regarded as the sum of constant<br />

capacitances and tunable ones. These issues reveals an<br />

important drawback of <strong>LC</strong> oscillators: the former are<br />

mainly made of the parasitic capacitances of the inductor,<br />

the varactor and the transistors, and further limit the<br />

tuning range even reduce the operation frequencies<br />

because they cannot be varied by the control voltage. It’s<br />

interesting to note that to maximize the tuning range,<br />

operating frequencies and constant capacitances, the<br />

978-1-4244-1808-4/978-1-4244-1809-1/08/$25.00 © 2008 IEEE 545 2008 IEEE Radio <strong>Frequency</strong> Integrated Circuits Symposium


Fig. 3 <strong>LC</strong> oscillation circuit equivalent<br />

Fig. 2 The proposed <strong>LC</strong>-<strong>VCO</strong> with transformer based inductors<br />

constant part in the tank must be minimized. However, it<br />

nevertheless suffers from a trade-off between the<br />

dynamic range and the operating frequency. The parasitic<br />

capacitances from the transistors and varactor constitute<br />

a significant fraction of the overall capacitance, thereby<br />

limiting tuning range [1].<br />

B. Proposed <strong>LC</strong>-<strong>VCO</strong> <strong>Using</strong> a Transformer Based<br />

Inductor<br />

To exclude the effective parasitic capacitor, an<br />

<strong>LC</strong>-based oscillator scheme with a symmetry<br />

transformer-based inductor is shown in Fig. 2. The<br />

symmetry transformer is placed between the gate and<br />

drain of M 1<br />

, the circuit with a feedback loop to oscillate.<br />

In order to reduce the required supply voltage and to<br />

eliminate additional noise contribution, the tail current in<br />

a conventional cross-coupled <strong>VCO</strong> is replaced by a<br />

system inductor L 5<br />

-L 6<br />

. The <strong>LC</strong> oscillation scheme formed<br />

by inductor, the varactor and the transistors but without<br />

effective parasitic capacitor (C p<br />

). The total capacitance<br />

seen from X to ground is equal to C toto<br />

plus the Miller<br />

multiplication of CGS + CDB + 2CGD + C + C , assumed<br />

0 V<br />

A<br />

V<br />

=− 1. Now the varactor capacitance can be calculated.<br />

All contributions to C toto<br />

are identified as:<br />

If follows that<br />

C = C + C + 2C + C + C (4)<br />

toto GS DB GD 0 V<br />

1<br />

C = − C + C + C + C<br />

ω × L<br />

[ 2<br />

0 ]<br />

V DB GD GS<br />

osc<br />

(5)<br />

As expected, total capacitance (C toto<br />

) in (2) is reduced<br />

to (4) for proposed <strong>LC</strong>-<strong>VCO</strong>. The resonant circuit is<br />

generally the type of parallel <strong>LC</strong>-tank, which is formed<br />

by the equivalent inductance from the primary coil of the<br />

transformer and the parasitic capacitances across the<br />

Fig. 4 Half circuit equivalent<br />

port.<br />

III.<br />

SIMPLIFIED LINEAR ANALYSIS<br />

We exploit the <strong>LC</strong> oscillation scheme of Fig. 3 to<br />

construct the equivalent circuit shown in Fig. 2. It is<br />

composed of three mutual inductors L 1<br />

-L 6<br />

[5], a MOS<br />

transistor pair. The inductors possess the coupling factor<br />

K and coupling polarity is assigned by the dot convention<br />

in the figure. The <strong>LC</strong> oscillation operation can be<br />

explained by considering the half-circuit model of Fig. 4.<br />

In the figure, R 1<br />

and L 1<br />

represent the series resistance and<br />

inductance of the primary coil respectively while R 2<br />

and<br />

L 2<br />

represents that of the secondary coil; C is the effective<br />

tank capacitance. In this work, a symmetric structure of<br />

the transformer is adopted, thereby L 1<br />

= L 2<br />

= L, and R 1<br />

=<br />

R 2<br />

= R. By considering the resonator core’s loop in Fig. 4,<br />

we have<br />

1<br />

+ × − × + × = 0 (6)<br />

sC<br />

( sL R) i2 i1 sKL i2<br />

i = g × v<br />

(7)<br />

1 m1<br />

vx<br />

sg<br />

1<br />

=− i2<br />

× (8)<br />

sC<br />

546


Fig. 5 Die photo of the fabricated chip<br />

Fig. 8 Measured output spectrum<br />

<br />

<br />

<br />

<br />

<br />

<br />

<br />

<br />

<br />

<br />

Fig. 6 Measured phase-noise corner<br />

Fig. 9 Measured phase noise<br />

<br />

<br />

<br />

<br />

<br />

<br />

<br />

<br />

<br />

<br />

<br />

<br />

<br />

<br />

<br />

Fig. 7 Measured characteristics of tuning frequency range<br />

ω = (10)<br />

<strong>LC</strong><br />

2 1<br />

osc<br />

The oscillation frequency obviously depends on the<br />

inductances and capacitances of the tank. In addition,<br />

oscillate loss through the serial resistance R will be<br />

cancelled while oscillating. By equations (9) and (10),<br />

the transconductance must satisfy the following<br />

condition for a sustained oscillation:<br />

g<br />

KL<br />

m1<br />

+ gm<br />

1R5<br />

C ≥ R<br />

( 1 )<br />

(11)<br />

Substituting s = jω from above equations, we can get<br />

i<br />

2<br />

<br />

R−<br />

<br />

<br />

gm<br />

1KL<br />

<br />

gm<br />

1R5<br />

C <br />

<br />

( 1+<br />

)<br />

1 <br />

+ jω<br />

L− 0<br />

2 =<br />

ω C <br />

(9)<br />

Imaginary parts of the denominator must drop to zero<br />

when oscillation occurs, and we have<br />

and we get<br />

g<br />

m1<br />

RC<br />

≥<br />

KL−<br />

RCR<br />

IV.<br />

5<br />

(12)<br />

MEASUREMENT RESULTS<br />

To verify the performance of the <strong>LC</strong>-<strong>VCO</strong> as<br />

previously described, the proposed circuits were<br />

fabricated in 0.18-μm <strong>CMOS</strong> technology. Fig. 5 shows<br />

547


the microphotograph of the test chip with an area of<br />

830×910 μm 2 including the output buffers and I/O pads.<br />

Each output signal is connected to an open-drain circuit<br />

with an externally match resistance of 50 Ω. The <strong>VCO</strong><br />

was tested on an FR-4 PC board using Agilent E4407B<br />

Spectrum analyzer for measurement. With a 0.7-V supply,<br />

it consumes the power of 6 mW. Fig. 6 shows the<br />

measured phase noise at 1-MHz offset. The measured<br />

frequency tuning characteristic is shown in Fig. 7. As can<br />

be seen, the tuning range is 5% (8.32 to 8.75 GHz). The<br />

measured spectrum of 8.5 GHz is shown in Fig. 8, and<br />

they prove that the resonant oscillation of the <strong>LC</strong>-tank<br />

merely occurs in the primary of the transformers. Fig. 9<br />

shows a plot of the measured phase noise of the 8.5-GHz<br />

output is -121.5dB/c at 1-MHz offset.<br />

A widely accepted figure of merit (FoM) for <strong>VCO</strong>s is<br />

given by [6]:<br />

f0 Pdiss<br />

<br />

FoM = PN ( Δf<br />

) − 20 log<br />

+ 10 log<br />

(13)<br />

Δf<br />

1mW<br />

<br />

The FoM normalizes the phase noise at a given offset Δf,<br />

the center frequency f 0<br />

, and the power consumption<br />

P in milliwatts. The best FoM of the <strong>VCO</strong> is −190<br />

diss<br />

dBc/Hz. Table 1 shows the FoM of several comparable<br />

under around 1-V supply over the past years [7]-[10].<br />

V. CONCLUSION<br />

A high frequency and low voltage <strong>LC</strong>-<strong>VCO</strong> was<br />

achieved by using a symmetric transformer-based<br />

inductor. It is an interesting work covering the use of<br />

Miller multiplication to reduce parasitic capacitances, for<br />

building high-frequency <strong>VCO</strong>s. The prototype <strong>LC</strong>-<strong>VCO</strong><br />

can extend the operating frequencies at 8.32 to 8.75 GHz<br />

in a standard 0.18-μm <strong>CMOS</strong> process at minimum<br />

operating supply voltages of 0.7 V. The measured results<br />

demonstrate the functionality of the <strong>LC</strong>-<strong>VCO</strong>s with the<br />

proposed to reduce parasitic capacitances technique.<br />

ACKNOWLEDGMENT<br />

The authors would like to thank the National Science<br />

Council, Taiwan, for the financial support and the Chip<br />

Implementation Center (CIC), Taiwan, for the<br />

infrastructure support. This work was sponsored by<br />

NSC95-2220-E- 005-003<br />

REFERENCES<br />

[1] C.Y. Yang and M.T. Tsai, “<strong>High</strong>-frequency low-noise<br />

voltage-controlled <strong>LC</strong>-tank oscillators using a tunable<br />

inductor technique,” IEICE Trans. Electron., Vol. E89-C,<br />

No.11, pp. 1567-1574, Nov. 2006.<br />

[2] K. Andreani and H. Sjoland, “Tail current noise<br />

suppression in RF <strong>CMOS</strong> <strong>VCO</strong>s,” IEEE J. Solid-State<br />

Circuits, Vol. 37, No. 3, pp. 342-348, Mar. 2002.<br />

[3] J. Cranickx, M. Steyart, and H. Miyakawa, “A fully<br />

integrated spiral <strong>LC</strong> <strong>CMOS</strong> <strong>VCO</strong> set with prescaler for<br />

GSM and DCS-1800,” Proc. IEEE Custom Integrated<br />

Circuits Conference (CICC), pp. 403-406, 1997.<br />

[4] B. Razavi, Design of Analog <strong>CMOS</strong> Integrated Circuits,<br />

McGraw-Hill, 2000.<br />

[5] W. Worapishet, “Extended phase noise performance in<br />

mutual negative resistance <strong>CMOS</strong> <strong>LC</strong> oscillator for low<br />

supply voltages,” IEICE Trans. Electron., Vol. E89-C,<br />

No.6, pp. 732-738, Jun. 2006.<br />

[6] P. Kinget, Integrated GHz <strong>Voltage</strong> Controlled<br />

Oscillators, Kluwer Acdemic Publishers, New York<br />

(1999).<br />

[7] S.-H. Lee, Y.-H. Chuang, L.-R. Chi, and J.-F. Lee, “A<br />

<strong>Low</strong>-<strong>Voltage</strong> 2.4GHz <strong>VCO</strong> with 3D Helical Inductors,”<br />

IEEE APCCAS, Dec, 2006.<br />

[8] M. N. El-Gamal et al., “Very low-voltage (0.8 V)<br />

<strong>CMOS</strong> receiver frontend for 5 GHz RF applications,”<br />

Proc. Inst. Elect. Eng.—Circuits, Devices,Syst,, vol. 149,<br />

no. 5/6, pp. 355–362, Oct.–Dec. 2002.<br />

[9] J-A. Hou, C.-P. Chang, J. Su, T.-S. Liou, S.-C. Wong,<br />

Y.-H. Wang, “A low supply voltage <strong>VCO</strong> implemented<br />

by a single common-source 90 nm <strong>CMOS</strong> transistor,”<br />

IEEE Microwave Wireless Component Letter, Vol. 17,<br />

No. 1, pp. 64-66 (2007).<br />

[10] M.-D. Tsai, Y.-H. Cho, H. Wang, “A 5-GHz low phase<br />

noise differential Colpitts <strong>CMOS</strong> <strong>VCO</strong>,” IEEE<br />

Microwave Wireless Component Letter, Vol. 15, No. 5,<br />

pp. 327-329, May 2005.<br />

Table 1 Comparison of performance with prior works<br />

Technology <strong>Frequency</strong><br />

Refs<br />

[μm]<br />

[GHz]<br />

Turing range<br />

[GHz]<br />

VDD<br />

[V]<br />

Power<br />

[mW]<br />

Phase Noise<br />

[dBc/Hz]<br />

FoM<br />

[dBc/Hz]<br />

This work 0.18 <strong>CMOS</strong> 8.5 0.4 0.7 6 -121.6 @ 1MHz -190<br />

[7] 0.18 <strong>CMOS</strong> 2.4 4.4 1 2.6 -116.8 @ 1MHz -180.25<br />

[8] 0.18 <strong>CMOS</strong> 5.8 0.198 0.8 - -100 @ 500KHz -<br />

[9] 0.9 <strong>CMOS</strong> 1.77 0.07 1 6.26 -107 @ 1MHz -163.0<br />

[10] 0.18 <strong>CMOS</strong> 4.8 0.4 1.5 3 -120 @ 1MHz -188.8<br />

548

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