SIPR-9332BE10 Thick Film Positive Photoresist
SIPR-9332BE10 Thick Film Positive Photoresist
SIPR-9332BE10 Thick Film Positive Photoresist
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<strong>SIPR</strong>-<strong>9332BE10</strong><br />
<strong>Thick</strong> <strong>Film</strong><br />
<strong>Positive</strong> <strong>Photoresist</strong><br />
High Thermal Stability<br />
The <strong>SIPR</strong> positive photoresist line has been formulated To give<br />
outstanding results in thicker photoresist <strong>Film</strong>s. Highly vertical<br />
sidewalls are achieved using the <strong>SIPR</strong> one component positive<br />
photoresist. The <strong>SIPR</strong> one component positive photoresist, by<br />
binding sensitizer covalently to the resin, achieves high<br />
resolution with low optical absorption and high aspect<br />
ratio. <strong>SIPR</strong> positive photoresists have been formulated<br />
to meet the highly demanding applications of thin film<br />
Head manufacturing, high voltage ion implantation And<br />
aggressive etch processing.<br />
DoF (3 µm L/S)605 mJ/cm 2<br />
Dehydration Bake<br />
150°C x 120 sec<br />
HMDS Primed<br />
23°C x 120 sec<br />
Resist Apply<br />
10.0 µm<br />
P.B.<br />
90°C x 120 sec<br />
Exposure<br />
NSR-1755i7A<br />
NA=0.50, σ=0.6<br />
PEB<br />
None<br />
Development<br />
SSFD-238<br />
(2.38% TMAH)<br />
50 sec x 4 times<br />
-3 µm<br />
Linearity (10~1.5 µm)560 mJ/cm 2<br />
Dehydration Bake<br />
150°C x 120 sec<br />
10 µm<br />
HMDS Primed<br />
23°C x 120 sec<br />
Resist Apply<br />
10.0 µm<br />
P.B.<br />
90°C x 120 sec<br />
Exposure 4 µm<br />
NSR-1755i7A<br />
NA=0.50, σ=0.6<br />
PEB<br />
None<br />
Development<br />
SSFD-238<br />
(2.38% TMAH) Puddle<br />
50 sec x 3 times<br />
-2 µm<br />
+1 µm +2 µm<br />
8 µm<br />
3 µm<br />
-1 µm<br />
+3 µm<br />
6 µm<br />
2 µm<br />
±0 µm<br />
5 µm<br />
1.5 µm
<strong>SIPR</strong>-<strong>9332BE10</strong><br />
<strong>Thick</strong> <strong>Film</strong><br />
<strong>Positive</strong> <strong>Photoresist</strong><br />
Dehydration Bake:<br />
150°C x 120 sec<br />
HMDS Primed:<br />
23°C x 120 sec<br />
Resist Apply:<br />
10.0 µm<br />
P.B.:<br />
90°C x 120 sec<br />
Exposure:<br />
NSR-1755i7A<br />
NA=0.50, σ=0.6<br />
PEB:<br />
without PEB<br />
Development:<br />
SSFD-238<br />
(2.38% TMAH)<br />
50 sec x 4 times<br />
Line Width (µm)<br />
10.3<br />
10.2<br />
10.1<br />
10.0<br />
9.9<br />
9.8<br />
9.7<br />
540<br />
Eop<br />
(<strong>Thick</strong>ness: 10.0 µm, 10 µm L/S)<br />
560 580 600 620<br />
Dose (mJ/cm 2<br />
Line Width (µm)<br />
3.4<br />
3.3<br />
3.2<br />
3.1<br />
3.0<br />
Eop<br />
(<strong>Thick</strong>ness: 10.0 µm, 3 µm L/S)<br />
2.9<br />
550 560 570 580 590 600 610<br />
Dose (mJ/cm 2<br />
601313 y=14.467-7.8667e-3x R 2 =0.965 601313 y=8.1558-8.6400e-3x R 2 =0.973<br />
<strong>Thick</strong>ness (µm)<br />
14<br />
13<br />
12<br />
11<br />
10<br />
9<br />
8<br />
<strong>Thick</strong>ness<br />
(PB: 90°C x 120 sec)<br />
Line Width (µm)<br />
4.0<br />
3.8<br />
3.6<br />
3.4<br />
3.2<br />
3.0<br />
2.8<br />
2.6<br />
2.4<br />
2.2<br />
DoF<br />
(<strong>Thick</strong>ness: 10.0 µm, 3 µm L/S)<br />
7<br />
2.0<br />
1000 2000 3000 4000<br />
-4<br />
5000 6000<br />
-2 0 2 4<br />
Focus (µm)<br />
Spinning Rate (rpm)<br />
590 J/cm 2 R 2 =0.997<br />
<strong>Thick</strong>ness<br />
y=3.0057-5.5905e-2x+2.876e-2x 2 -1.0167e-2x 3<br />
590 J/cm2 R 2 =0.997<br />
y=2.9234-4.5905e-2x+ 2.0429e-2x 2 -9.6667e-3x 3<br />
Line Width (µm)<br />
12<br />
10<br />
8<br />
6<br />
4<br />
2<br />
0 0<br />
Linearity<br />
(<strong>Thick</strong>ness: 10.0 µm)<br />
2 4 6 8 10<br />
Mask Size (µm)<br />
560 mJ/cm 2<br />
12<br />
10028 South 51 st Street, Phoenix, Arizona 85044<br />
TEL (480) 893- 8898 FAX (480) 893-8637<br />
www.microsi.con
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