APM2014N - Datasheets

APM2014N
N-Channel Enhancement Mode MOSFET
Features
Pin Description
• 20V/30A , R DS(ON)
=12mΩ(typ.) @ V GS
=4.5V
R DS(ON)
=18mΩ(typ.) @ V GS
=2.5V
• Super High Dense Cell Design for Extremely
Low R DS(ON)
• Reliable and Rugged
• TO-252 Package
1 2 3
G D S
Applications
Top View of TO-252
• Power Management in Computer, Portable
Equipment and Battery Powered Systems.
Ordering and Marking Information
APM2014N
Handling Code
Temp. Range
Package Code
Package Code
U : TO-252
Operation Junction Temp. Range
C :-55 to 150 ° C
Handling Code
TR : Tape & Reel
APM2014N U :
APM2014N
XXXXX
XXXXX - Date Code
Absolute Maximum Ratings (T A
= 25°C unless otherwise noted)
Symbol Parameter Rating Unit
V DSS Drain-Source Voltage 20
V
V GSS Gate-Source Voltage ±16
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002
1
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APM2014N
Absolute Maximum Ratings (Cont.) (T A
= 25°C unless otherwise noted)
Symbol Parameter Rating Unit
*
I D Maximum Drain Current – Continuous 30
A
I DM Maximum Drain Current – Pulsed 50
P D
T A =25°C 50
Maximum Power Dissipation
W
T A =100°C 10
T J Maximum Junction Temperature 150 °C
T STG Storage Temperature Range -55 to 150 °C
R θjA
Thermal Resistance – Junction to Ambient 50 °C/W
* Surface Mounted on FR4 Board, t ≤ 10 sec.
Electrical Characteristics (T A
= 25°C unless otherwise noted)
Symbol Parameter Test Condition
Static
BV DSS
I DSS
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain
Current
APM2014N
Min. Typ. Max.
V GS =0V , I DS =250µA 20 V
Unit
V DS =18V , V GS =0V 1 µA
V GS(th) Gate Threshold Voltage V DS =V GS , I DS =250µA 0.6 1.5 V
I GSS Gate Leakage Current V GS =±16V , V DS =0V ±100 nA
R DS(ON)
a
Drain-Source On-state V GS =4.5V , I DS =10A 12 14
Resistance V GS =2.5V , I DS =5A 18 22
V SD
a
Diode Forward Voltage I SD =4A , V GS =0V 0.6 1.3 V
Dynamic b
Q g Total Gate Charge V DS =10V , I DS = 5A
18.2 24
Q gs Gate-Source Charge V GS =4.5V ,
5.6
Q gd Gate-Drain Charge
4.8
t d(ON) Turn-on Delay Time 10 20
T r Turn-on Rise Time V DD =10V , I DS =1A ,
15 22
t d(OFF) Turn-off Delay Time V GEN =4.5V , R G =0.2Ω
28 42
T f Turn-off Fall Time
17 25
C iss Input Capacitance V GS =0V
1210
C oss Output Capacitance V DS =15V
300
C rss Reverse Transfer Capacitance Frequency=1.0MHz 210
Notes
a
: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
b
: Guaranteed by design, not subject to production testing
mΩ
nC
ns
pF
Copyright © ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002
2
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APM2014N
Typical Characteristics
Output Characteristics
Transfer Characteristics
30
30
VGS=4,5,6,7,8,9,10V
25
3V
25
ID-Drain Current (A)
20
15
10
2.5V
ID-Drain Current (A)
20
15
10
TJ=125°C
5
2V
5
TJ=25°C
TJ=-55°C
0
0 1 2 3 4 5 6 7 8
VDS - Drain-to-Source Voltage (V)
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VGS - Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
On-Resistance vs. Drain Current
1.50
IDS=250uA
0.030
VGS(th)-Threshold Voltage (V)
(Normalized)
1.25
1.00
0.75
0.50
0.25
RDS(ON)-On-Resistance (Ω)
0.025
0.020
0.015
0.010
0.005
VGS=2.5V
VGS=4.5V
0.00
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
0.000
0 5 10 15 20
ID - Drain Current (A)
Copyright © ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002
3
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APM2014N
Typical Characteristics
RDS(ON)-On-Resistance (Ω)
On-Resistance vs. Gate-to-Source Voltage
0.07
0.06
0.05
0.04
0.03
0.02
0.01
ID=10A
0.00
1 2 3 4 5 6 7 8 9 10
VGS - Gate-to-Source Voltage (V)
RDS(ON)-On-Resistance (Ω)
(Normalized)
On-Resistance vs. Junction Temperature
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
VGS=4.5V
ID=10A
0.00
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
VGS-Gate-Source Voltage (V)
10
8
6
4
2
VDS=4.5V
ID=5A
Gate Charge
0
0 5 10 15 20 25 30 35
QG - Gate Charge (nC)
Capacitance (pF)
2100
1800
1500
1200
900
600
300
Capacitance
Frequency=1MHz
Ciss
Coss
Crss
0
0 4 8 12 16 20
VDS - Drain-to-Source Voltage (V)
Copyright © ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002
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APM2014N
Typical Characteristics
Source-Drain Diode Forward Voltage
Single Pulse Power
30
250
IS-Source Current (A)
10
1
0.1
TJ=150°C
TJ=25°C
Power (W)
200
150
100
50
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD -Source-to-Drain Voltage (V)
0
1E-3 0.01 0.1 1 10 100 1000
Time (sec)
Normalized Thermal Transient Impedence, Junction to Ambient
Normalized Effective Transient
Thermal Impedance
1
0.1
Duty Cycle=0.5
D=0.2
D=0.1
D=0.05
D=0.02
D=0.01
SINGLE PULSE
0.01
1E-4 1E-3 0.01 0.1 1 10 100 1000
Square Wave Pulse Duration (sec)
1.Duty Cycle, D=t1/t2
2.Per Unit Base=RthJA=50°C/W
3.TJM-TA=PDMZthJA
Copyright © ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002
5
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APM2014N
Packaging Information
TO-252( Reference JEDEC Registration TO-252)
E
b2
L2
A
C1
D
H
L1
L
b
e1
A1
C
Dim
Millimeters
Inches
Min. Max. Min. Max.
A 2.18 2.39 0.086 0.094
A1 0.89 1.27 0.035 0.050
b 0.508 0.89 0.020 0.035
b2 5.207 5.461 0.205 0.215
C 0.46 0.58 0.018 0.023
C1 0.46 0.58 0.018 0.023
D 5.334 6.22 0.210 0.245
E 6.35 6.73 0.250 0.265
e1 3.96 5.18 0.156 0.204
H 9.398 10.41 0.370 0.410
L 0.51 0.020
L1 0.64 1.02 0.025 0.040
L2 0.89 2.032 0.035 0.080
Copyright © ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002
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APM2014N
Physical Specifications
Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition (IR/Convection or VPR Reflow)
temperature
Pre-heat temperature
183 ° C
Peak temperature
Time
Classification Reflow Profiles
Convection or IR/
VPR
Convection
Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max.
Preheat temperature 125 ± 25°C)
120 seconds max
Temperature maintained above 183°C 60 – 150 seconds
Time within 5°C of actual peak temperature 10 –20 seconds 60 seconds
Peak temperature range 220 +5/-0°C or 235 +5/-0°C 215-219°C or 235 +5/-0°C
Ramp-down rate 6 °C /second max. 10 °C /second max.
Time 25°C to peak temperature
6 minutes max.
Package Reflow Conditions
pkg. thickness ≥ 2.5mm
and all bgas
pkg. thickness < 2.5mm and
pkg. volume ≥ 350 mm³
pkg. thickness < 2.5mm and pkg.
volume < 350mm³
Convection 220 +5/-0 °C Convection 235 +5/-0 °C
VPR 215-219 °C VPR 235 +5/-0 °C
IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C
Copyright © ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002
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APM2014N
Reliability test program
Test item Method Description
SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimensions
t
E
Po
P
P1
D
W
F
Bo
Ao
D1
Ko
T2
J
A
C
B
T1
Application A B C J T1 T2 W P E
330 ±3 100 ± 2 13 ± 0. 5 2 ± 0.5
16.4 + 0.3
-0.2
2.5± 0.5
16+ 0.3
- 0.1
8 ± 0.1 1.75± 0.1
TO-252
F D D1 Po P1 Ao Bo Ko t
7.5 ± 0.1 1.5 +0.1 1.5± 0.25 4.0 ± 0.1 2.0 ± 0.1 6.8 ± 0.1 10.4± 0.1 2.5± 0.1 0.3±0.05
Copyright © ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002
8
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APM2014N
Cover Tape Dimensions
Application Carrier Width Cover Tape Width Devices Per Reel
TO- 252 16 13.3 2500
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright © ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002
9
www.anpec.com.tw