APM2300 - Datasheets

APM2300
N-Channel Enhancement Mode MOSFET
Features
Pin Description
• 20V/6A , R DS(ON)
=35mΩ(typ.) @ V GS
=10V
R DS(ON)
=45mΩ(typ.) @ V GS
=4.5V
R DS(ON)
=115mΩ(typ.) @ V GS
=2.5V
• Super High Dense Cell Design for Extremely
Low R DS(ON)
• Reliable and Rugged
• SOT-23 Package
Applications
D
G S
Top View of SOT-23
• Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
Ordering and Marking Information
APM2300
Handling Code
Temp. Range
Package Code
Package Code
A : SOT-23
Temp. Range
C : 0 to 70 ° C
Handling Code
TR : Tape & Reel
APM2300 A : 2300 X X - Date Code
Absolute Maximum Ratings (T A
= 25°C unless otherwise noted)
Symbol Parameter Rating Unit
V DSS Drain-Source Voltage 20
V GSS Gate-Source Voltage ±16
I D
*
Maximum Drain Current – Continuous 6
I DM Maximum Drain Current – Pulsed 20
* Surface Mounted on FR4 Board, t ≤ 10 sec.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
V
A
Copyright © ANPEC Electronics Corp.
Rev. A.1 - Mar., 2002
1
www.anpec.com.tw

APM2300
Absolute Maximum Ratings Cont. (T A
= 25°C unless otherwise noted)
Symbol Parameter Rating Unit
P D
Maximum Power Dissipation T A =25°C 1.25
W
T A =100°C 0.5
T J Maximum Junction Temperature 150 °C
T STG Storage Temperature Range -55 to 150 °C
R θjA
Thermal Resistance – Junction to Ambient 100 °C/W
Electrical Characteristics (T A
= 25°C unless otherwise noted)
Symbol Parameter Test Condition
Static
BV DSS
I DSS
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain
Current
APM2300
Min. Typ. Max.
V GS =0V , I DS =250µA 20 V
Unit
V DS =16V , V GS =0V 1 µA
V GS(th) Gate Threshold Voltage V DS =V GS , I DS =250µA 0.6 1.5 V
I GSS Gate Leakage Current V GS =±16V , V DS =0V ±100 nA
R DS(ON)
a
Drain-Source On-state
Resistance
V GS =10V , I DS =3.5A 35 50
V GS =4.5V , I DS =2.8A 45 60
V GS =2.5V , I DS =2A 115 125
V SD
a
Diode Forward Voltage I SD =1.25A , V GS =0V 0.6 1.3 V
Dynamic b
Q g Total Gate Charge V DS =12V , I DS = 3.5A
13 25
Q gs Gate-Source Charge V GS =4.5V
3
Q gd Gate-Drain Charge
4.5
t d(ON) Turn-on Delay Time 6 12
T r Turn-on Rise Time V DD =10V , I DS =1A ,
5 10
t d(OFF) Turn-off Delay Time V GEN =4.5V , R G =0.2Ω
16 40
T f Turn-off Fall Time
5 20
C iss Input Capacitance V GS =0V
450
C oss Output Capacitance V DS =15V
100
C rss Reverse Transfer Capacitance Frequency=1.0MHz 60
mΩ
nC
ns
pF
Notes
a
: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
b
: Guaranteed by design, not subject to production testing
Copyright © ANPEC Electronics Corp.
Rev. A.1 - Mar., 2002
2
www.anpec.com.tw

APM2300
Typical Characteristics
Output Characteristics
Transfer Characteristics
20
20
VGS=4,5,6,7,8,9,10V
ID-Drain Current (A)
16
12
8
4
VGS=3V
ID-Drain Current (A)
15
10
5
TJ=25°C
TJ=125°C
TJ=-55°C
VGS=2V
0
0 1 2 3 4 5
VDS - Drain-to-Source Voltage (V)
0
0.0 0.5 1.0 1.5 2.0 2.5
VGS - Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
On-Resistance vs. Drain Current
1.50
IDS=250uA
0.08
VGS(th)-Threshold Voltage (V)
(Normalized)
1.25
1.00
0.75
0.50
0.25
RDS(ON)-On-Resistance (Ω)
0.07
0.06
0.05
0.04
0.03
0.02
0.01
VGS=4.5V
VGS=10V
0.00
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
0.00
0 5 10 15 20
ID - Drain Current (A)
Copyright © ANPEC Electronics Corp.
Rev. A.1 - Mar., 2002
3
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APM2300
Typical Characteristics
RDS(ON)-On-Resistance (Ω)
On-Resistance vs. Gate-to-Source Voltage
0.070
0.065
0.060
0.055
0.050
0.045
0.040
0.035
ID=4A
0.030
2 3 4 5 6 7 8 9 10
VGS - Gate-to-Source Voltage (V)
RDS(ON)-On-Resistance (Ω)
(Normalized)
On-Resistance vs. Junction Temperature
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
VGS=4.5V
ID=2.8A
0.00
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
Gate Charge
Capacitance
VGS-Gate-Source Voltage (V)
10
9
8
7
6
5
4
3
2
1
VDS=12V
ID=3.5A
Capacitance (pF)
750
625
500
375
250
125
Ciss
Coss
Crss
0
0.0 2.5 5.0 7.5 10.0 12.5 15.0
QG - Gate Charge (nC)
0
0 5 10 15 20
VDS - Drain-to-Source Voltage (V)
Copyright © ANPEC Electronics Corp.
Rev. A.1 - Mar., 2002
4
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APM2300
Typical Characteristics
Source-Drain Diode Forward Voltage
Single Pulse Power
20
14
12
IS-Source Current (A)
10
TJ=150°C
TJ=25°C
Power (W)
10
8
6
4
2
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD -Source-to-Drain Voltage (V)
0
0.01 0.1 1 10 100
Time (sec)
Normalized Thermal Transient Impedence, Junction to Ambient
Normalized Effective Transient
Thermal Impedance
1
0.1
Duty Cycle=0.5
D=0.2
D=0.1
D=0.05
D=0.02
D=0.01 SINGLE PULSE
1.Duty Cycle, D=t1/t2
2.Per Unit Base=RthJA=100°C/W
3.TJM-TA=PDMZthJA
0.01
1E-4 1E-3 0.01 0.1 1 10 100
Square Wave Pulse Duration (sec)
Copyright © ANPEC Electronics Corp.
Rev. A.1 - Mar., 2002
5
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APM2300
Packaging Information
SOT-23
D
B
1
3
2
E
H
S
e
A
A1 L C
Millimeters
Inches
Dim
Min. Max. Min. Max.
A 1.00 1.30 0.039 0.051
A1 0.00 0.10 0.000 0.004
B 0.35 0.51 0.014 0.020
C 0.10 0.25 0.004 0.010
D 2.70 3.10 0.106 0.122
E 1.40 1.80 0.055 0.071
e 1.90 BSC 0.075 BSC
H 2.40 3.00 0.094 0.118
L 0.37 0.0015
Copyright © ANPEC Electronics Corp.
Rev. A.1 - Mar., 2002
6
www.anpec.com.tw

APM2300
Physical Specifications
Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Packaging
3000 devices per reel for SOT-23
Reflow Condition (IR/Convection or VPR Reflow)
Reference JEDEC Standard J-STD-020A APRIL 1999
temperature
Pre-heat temperature
183 ° C
Peak temperature
Classification Reflow Profiles
Time
Convection or IR/ Convection
Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max.
Preheat temperature 125 ± 25°C) 120 seconds max.
Temperature maintained above 183°C 60 ~ 150 seconds
Time within 5°C of actual peak
10 ~ 20 seconds 60 seconds
temperature
Peak temperature range 220 +5/-0°C or 235 +5/-0°C 215~ 219°C or 235 +5/-0°C
Ramp-down rate 6 °C /second max. 10 °C /second max.
Time 25°C to peak temperature
6 minutes max.
VPR
Package Reflow Conditions
pkg. thickness ≥ 2.5mm
and all bags
pkg. thickness < 2.5mm and
pkg. volume ≥ 350 mm³
pkg. thickness < 2.5mm and pkg.
volume < 350mm³
Convection 220 +5/-0 °C Convection 235 +5/-0 °C
VPR 215-219 °C VPR 235 +5/-0 °C
IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C
Copyright © ANPEC Electronics Corp.
Rev. A.1 - Mar., 2002
7
www.anpec.com.tw

APM2300
Reliability test program
Test item Method Description
SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimensions
t
E
Po
P
P1
D
W
F
Bo
Ao
D1
Ko
T2
J
A
C
B
T1
Application A B C J T1 T2 W P E
178±1 72 ± 1.0 13.0 + 0.2 2.5 ± 0.15 8.4 ± 2 1.5± 0.3
8.0+ 0.3
- 0.3
4 ± 0.1 1.75± 0.1
SOT-23
F D D1 Po P1 Ao Bo Ko t
3.5 ± 0.05 1.5 +0.1 1.5 +0.1 4.0 ± 0.1 2.0 ± 0.1 3.15 ± 0.1 3.2± 0.1 1.4± 0.1 0.2±0.03
Copyright © ANPEC Electronics Corp.
Rev. A.1 - Mar., 2002
8
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APM2300
Cover Tape Dimensions
Carrier Width 8
Cover Tape Width 5.3
(mm)
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright © ANPEC Electronics Corp.
Rev. A.1 - Mar., 2002
9
www.anpec.com.tw