Square-like Silicon Crystal Rod Growth by FZ Method with ...

Fig. 10. Vertical position of crystallization interface for I 0 = 700 A, V crcr = 1 mm/min,
crystal height 50 mm.
Conclusions
The growth of square-shaped single silicon rods in FZ process without crystal rotation
is realized in Institute for Crystal Growth (Berlin, Germany). This opens new prospects of
material development for cost-effective, high-efficiency solar cells. The supporting system of
mathematical models and specialised program Shape3D are developed and have successfully
contributed to the experiments.
References
[1] Annual Report 2004/05, Institute for Crystal Growth, Berlin, Germany. www.ikz-berlin.de
[2] G. Ratnieks, A. Muiznieks, A. Mühlbauer. Modelling of phase boundaries for large industrial FZ silicon
crystal growth with the needle-eye technique. J. Crystal Growth, Vol. 255 (2003), pp. 227-240.
Authors
Dr.-Phys. Muiznieks, Andris
Ms.-comp. Rudevics, Andis
Ms.-Phys. Lacis, Kaspars
Faculty of Physics and Mathematics
University of Latvia
Zellu str. 8
LV-1002 Riga, Latvia
E-mail: andris.muiznieks@lu.lv
Dr.-Phys. Riemann, Helge
Dr.-Phys. Lüdge, Anke
Institute for Crystal Growth
Max-Born-Str. 2
D-12489 Berlin, Germany
E-mail: riemann@ikz-berlin.de
Prof., Dr.-Ing. Nacke, Bernard
Institute for Eletctrothermal Processes
University of Hanover
Wilhelm-Busch Str. 4
D-30167 Hanover, Germany
E-mail: nacke@ewh.uni-hannover.de
Schulze, Friedrich-Wilhelm
PV Silicon AG
Wilhelm-Wolff-Str. 25
D-99099 Erfurt, Germany,
E-mail:
schulze@pvsilicon.com
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