DG9411 Low-Voltage Single SPDT Analog Switch - Darlas

New Product
DG9411
Vishay Siliconix
Low-Voltage Single SPDT Analog Switch
FEATURES
BENEFITS
APPLICATIONS
Low Voltage Operation (2.25 V to 5.5 V)
Low On-Resistance - r DS(on ): 7
Fast Switching - t ON : 9 ns, t OFF : 5 ns
Low Charge Injection - Q INJ : 5 pC
Low Power Consumption
TTL/CMOS Compatible
6-Pin SC-70 Package
Reduced Power Consumption
Simple Logic Interface
High Accuracy
Reduce Board Space
Cellular Phones
Communication Systems
Portable Test Equipment
Battery Operated Systems
Sample and Hold Circuits
DESCRIPTION
The DG9411 is a single-pole/double-throw monolithic CMOS
analog switch designed for high performance switching of
analog signals. Combining low power, high speed (t ON : 9 ns,
t OFF : 5 ns), low on-resistance (r DS(on) : 7 ) and small physical
size (SC70), the DG9411 is ideal for portable and battery
powered applications requiring high performance and efficient
use of board space.
The DG9411 is built on Vishay Siliconix’s low voltage JI2
process. An epitaxial layer prevents latchup. Break-before
-make is guaranteed for DG9411.
Each switch conducts equally well in both directions when on,
and blocks up to the power supply level when off.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
TRUTH TABLE
SC-70
IN
V+
GND
1
2
3
6
5
4
NO (Source 1 )
COM
NC (Source 2 )
Logic NC NO
0 ON OFF
1 OFF ON
Logic “0” 0.8 V
Logic “1” 2.4 V
Top View
Device Marking
4Dx or
4Dxy
ORDERING INFORMATION
Temp Range Package Part Number
-40 to 85°C SC70-6 DG9411DL
Document Number: 71347
S-32366—Rev. B, 11-Nov-03
www.vishay.com
1

DG9411
Vishay Siliconix
New Product
ABSOLUTE MAXIMUM RATINGS
Reference to GND
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +6 V
IN, COM, NC, NO a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to (V+ + 0.3 V)
Continuous Current (Any terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Peak Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mA
(Pulsed at 1 ms, 10% duty cycle)
Storage Temperature (D Suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 125°C
Power Dissipation (Packages) b
6-Pin SO70 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 mW
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by
internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6.5 mW/C above 25C
SPECIFICATIONS (V+ = 2.5 V)
Test Conditions
Otherwise Unless Specified
Limits
−40 to 85C
Analog Switch
Parameter Symbol V+ = 2.5 V, 10%, V IN = 0.4 or 2.0 V e Temp a Min b Typ c Max b Unit
Analog Signal Range d V NO , V NC ,
V COM
Full 0 V+ V
Drain-Source On-Resistance r DS(on) V+ = 2.25 V, V D = 1.0 V, I S = 10 mA
r DS(on) Flatness d
r DS(on)
Flatness
I S(off) Switch Off Leakage Current f V+ = 2.75 V
V S = 0.5 V/1.5 V, V D = 1.5 V/0.5 V
I D(off)
Channel-On Leakage Current f I D(on) V+ = 2.75 V, V S = V D = 0.5 V/1.5 V
Digital Control
Room
26
Full d 29
V+ = 2.5 V Room 10
Room
Full d
Room
Full d
Room
Full d
−250
−3.0
−250
−3.0
−250
−3.0
35
40
250
3.0
250
3.0
250
3.0
pA
nA
pA
nA
pA
nA
Input High Voltage V INH Full 2
Input Low Voltage V INL Full 0.4
Input Capacitance d C in Full 3 pF
Input Current I INL or I INH V IN = 0 or V+ Full −1 1 A
Dynamic Characteristics
Turn-Off Time t OFF Figures 1 and 2
V D or V S = 15 1.5 V, R L = 300 , C L = 35 pF
Turn-On Time t ON
Room
16 40
Full d 45
Room
7 23
Full d 28
Break-Before-Make Time t d Room 1 12
Charge Injection d Q INJ
C L = 1 nF, V S = 0 V
V GEN = 0 V, R GEN = 0 , Figure 3
Off-Isolation d
OIRR
Crosstalk d X TALK R L = 50 , C L = 5 pF, f = 1 MHz
V
Room 5 10 pC
Source-Off Capacitance d C S(off) Room 7
Drain-to-Source Capacitance d C DS(off) Room 20
Channel-On Capacitance d C D(on) V IN = 0 or V+, f = 1 MHz Room 20 pF
Power Supply
Power Supply Range V+ 2.25 2.75 V
Power Supply Current d I+
Power Consumption P C V IN = 0 or V+
Room
Room
−73
−70
ns
dB
0.01 1.0 A
0.3 W
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2
Document Number: 71347
S-32366—Rev. B, 11-Nov-03

New Product
DG9411
Vishay Siliconix
SPECIFICATIONS (V+ = 3 V)
Test Conditions
Otherwise Unless Specified
Limits
−40 to 85C
Analog Switch
Parameter Symbol V+ = 3 V, 10%, V IN = 0.4 or 2.0 V e Temp a Min b Typ c Max b Unit
Analog Signal Range d V NO , V NC ,
V COM
Full 0 V+ V
Drain-Source On-Resistance d r DS(on) V+ = 2.7 V, V D = 1.5 V, I S = 10 mA
r DS(on) Flatness d
r DS(on)
Flatness
I S(off) Switch Off Leakage Current f
V+ = 3.33 V, V S = 1 V/3 V, V D = 3 V/1 V
I D(off)
Channel-On Leakage Current f I D(on) V+ = 3.3 V, V S = V D = 1 V/3 V
Digital Control
Room
Full
15
19
V S = 0 to V+, I S = 10 mA Room 7.5
Room
Full
Room
Full
Room
Full
−500
−4.0
−500
−4.0
−500
−4.0
25
30
500
4.0
500
4.0
500
4.0
pA
nA
pA
nA
pA
nA
Input High Voltage V INH Full 2
Input Low Voltage V INL Full 0.8
Input Capacitance d C in Full 3 pF
Input Current I INL or I INH V IN = 0 or V+ Full −1 1 A
Dynamic Characteristics
Turn-Off Time d t OFF Figure 1 and 2
V D or V S = 20 2.0 V, R L = 300 , C L = 35 pF
Turn-On Time d t ON
Break-Before-Make Time d t d Room 1 7
Charge Injection d Q INJ
C L = 1 nF, V GEN = 0 V, V S = 0 V
R GEN = 0 , Figure 3
Off-Isolation d
OIRR
Crosstalk d X TALK R L = 50 , C L = 5 pF, f = 1 MHz
Room
Full
Room
Full
12 15
20
6 8
10
V
Room 5 10 pC
Source-Off Capacitance d C S(off) Room 7
Drain-to-Source Capacitance d C DS(off) Room 20
Channel-On Capacitance d C D(on) V IN = 0 or V+, f = 1 MHz Room 20 pF
Power Supply
Power Supply Range V+ 2.7 3.3 V
Power Supply Current I+
Power Consumption P C V IN = 0 or V+
Room
Room
−73
−70
ns
dB
0.01 1.0 A
0.4 W
Document Number: 71347
S-32366—Rev. B, 11-Nov-03
www.vishay.com
3

DG9411
Vishay Siliconix
New Product
SPECIFICATIONS (V+ = 5 V)
Test Conditions
Otherwise Unless Specified
Limits
−40 to 85C
Analog Switch
Parameter Symbol V+ = 5 V, 10%, V IN = 0.8 or 2.4 V e Temp a Min b Typ c Max b Unit
Analog Signal Range d V NO , V NC ,
V COM
Full 0 V+ V
Drain-Source On-Resistance r DS(on) V+ = 4.5 V, V D = 3 V, I S = 10 mA
r DS(on) Flatness d
Switch Off Leakage Current
r DS(on)
Flatness
I S(off)
I D(off)
Room
Full
V+ = 2.5 V Room 2
V+ = 5.5 V
V S = 1 V/4.5 V, V D = 4.5 V/1 V
Channel-On Leakage Current I D(on) V+ = 5.5 V, V S = V D = 1 V/4.5 V
Digital Control
Room
Full
Room
Full
Room
Full
−1.0
−4.0
−1.0
−4.0
−1.0
−3.0
7
10
12
16
1.0
4.0
1.0
4.0
1.0
4.5
nA
Input High Voltage V INH Full 2.4
Input Low Voltage V INL Full 0.8
Input Capacitance C in Full 3 pF
Input Current I INL or I INH V IN = 0 or V+ Full −1 1 A
Dynamic Characteristics
Turn-Off Time d t OFF Figure 1 and 2
V D or V S = 3 V, R L = 300 , C L = 35 pF
Turn-On Time d t ON
Break-Before-Make Time d t d Room 1 4
Charge Injection d Q INJ
C L = 1 nF, V S = 0 V
V GEN = 0 V, R GEN = 0 , Figure 3
Off-Isolation d
OIRR
Crosstalk d X TALK R L = 50 , C L = 5 pF, f = 1 MHz
Room
Full
Room
Full
9 11
15
5 7
9
V
Room 5 10 pC
Source-Off Capacitance d C S(off) Room 7
Drain-to-Source Capacitance d C DS(off) Room 20
Channel-On Capacitance d C D(on) V IN = 0 or V+, f = 1 MHz Room 20 pF
Power Supply
Power Supply Range V+ 4.5 5.5 V
Power Supply Current I+
Power Consumption P C V IN = 0 or V+
Notes:
a. Room = 25°C, Full = as determined by the operating suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
c. Typical values are for design aid only, not guaranteed nor subject to production testing.
d. Guarantee by design, nor subjected to production test.
e. V IN = input voltage to perform proper function.
f. Guaranteed by 5-V leakage testing, not production tested.
Room
Room
−73
−70
ns
dB
0.01 1.0 A
0.6 W
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4
Document Number: 71347
S-32366—Rev. B, 11-Nov-03

New Product
DG9411
Vishay Siliconix
TYPICAL CHARACTERISTICS (25C UNLESS NOTED)
30
r DS(on) vs. Analog and Power Voltage
30
r DS(on) vs. Analog Voltage and Temperature
r DS(on) − Drain-Source On-Resistance ( Ω )
25
20
15
10
5
V+ = 3 V
V+ = 2.5 V
V+ = 5 V
r DS(on) − Drain-Source On-Resistance ( Ω )
25
20
15
10
5
V+ = 2.5 V
V+ = 5 V
−40C
85C
25C
−40C
25C
85C
0
0 1 2 3 4 5
0
0 1 2 3 4 5
V D − Analog Voltage (V)
V D − Analog Voltage (V)
100
Supply Current vs. Temperature
V+ = 5 V
V IN = 0 V
Supply Current vs. Input Switching Frequency
10 mA
1 mA
I+ − Supply Current (nA)
10
1
0.1
I+ − Supply Current (nA)
100 A
10 A
1 A
100 pA
10 pA
0.01
−60 −40 −20 0 20 40 60 80 100 120 140
1 pA
1
10
100
1 K 10 K 100 K
1 M 10 M
Temperature (C)
Input SwitchingFrequency (Hz)
Leakage Current (pA)
100 K
10 K
1 K
100
Leakage Current vs. Temperature
V+ = 5 V
V D , V S = 5 V
I D(off)
I D(on)
Leakage Current (pA)
100
0
−100
−200
−300
−400
Leakage vs. Analog Voltage
V+ = 5 V
I D(off)
I D(on)
I S(off)
10
−500
1
−50 −25 0 25 50 75 100 125 150
Temperature (C)
−600
0 1 2 3 4 5 6
V D , V S − Analog Voltage (V)
Document Number: 71347
S-32366—Rev. B, 11-Nov-03
www.vishay.com
5

DG9411
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25C UNLESS NOTED)
Switching Time vs. Temperature and Supply Voltage
25
t ON
100
Crosstalk and Off Isolation vs. Frequency
t ON , t OFF − Switching Time (nS)
20
15
10
5
t OFF
25C
85C
−40C
25C
85C
−40C
OIRR, X TALK (dB)
80
60
40
20
V+ = 3 V
R L = 50
Crosstalk
Off Isolation
0
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
V+ − Supply Voltage (V)
0
10 K 100 K 1 M 10 M 100 M
Frequency (Hz)
3.0
Input Switching Threshold vs. Supply Voltage
0
Insertion Loss vs. Frequency
V T − Threshold Voltage (V)
2.5
2.0
1.5
1.0
ËËËËËËË
ËËËËËËË
ËËËËËËË
ËËËËËËË
Insertion Loss (dB)
−1
−2
−3
−4
V+ = 3 V
R L = 50
0.5
ËËËËËËË
ËËËËËËË
−5
0.0
0 1 2 3 4 5 6 7
V+ − Supply Voltage (V)
−6
1 K
10 K 100 K 1 M 10 M 100 M 1 G
Frequency (Hz)
Charge Injection (pC)
6
4
2
0
−2
−4
Charge Injection vs. Analog Voltage
C L = 1 nF
V+ = 2.5 V
V+ = 3 V
V+ = 5 V
−6
0 1 2 3 4 5 6
V D − Analog Voltage (V)
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Document Number: 71347
S-32366—Rev. B, 11-Nov-03

New Product
DG9411
Vishay Siliconix
TEST CIRCUITS
Switch
Input
Logic
Input
V+
V+
NO or NC
IN
GND
COM
Switch Output
R L
300
V OUT
C L
35 pF
Logic
Input
Switch
Output
+ 3 V
0 V
0 V
t ON
50%
t r
20 ns
t f 20 ns
0.9 x V OUT
t OFF
C L (includes fixture and stray capacitance)
R
V OUT
V COM
L
R L R ON
Logic “1” = Switch On
Logic input waveforms inverted for switches that have
the opposite logic sense.
FIGURE 1. Switching Time
V+
V+
Logic
Input
3 V
t r

DG9411
Vishay Siliconix
New Product
TEST CIRCUITS
V+
10 nF
V+
COM
IN
0V, 2.4 V
COM
NC or NO
R L
GND
V NCNO
Off Isolation 20 log
V COM
Analyzer
FIGURE 4. Off-Isolation
V+
10 nF
V+
COM
Meter
0 V, 2.4 V
IN
NC or NO
HP4192A
Impedance
Analyzer
or Equivalent
GND
f = 1 MHz
FIGURE 5. Channel Off/On Capacitance
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Document Number: 71347
S-32366—Rev. B, 11-Nov-03

Notice
Legal Disclaimer Notice
Vishay
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
www.vishay.com
Revision: 08-Apr-05 1