Scientific Programme of the SURFINT-SREN III

Scientific Programme of the SURFINT-SREN III
Florence, Italy
Opera Del Duomo, 14 – 18. May 2012
Monday, 14 May 2012
7:00 – 8:00 Breakfast
Chairman: Dr. Heike Angermann
8:00 – 8:15 Paolo Del Bianco OPENING President of Fondazione
Romualdo Del Bianco,
8:15 – 8:55 Hikaru Kobayashi New surface technologies for
improvement of conversion
efficiencies of crystalline Si solar
8:55 – 9:35 Dietrich R.T. Zahn
9:35 – 10:15 Katsuhiro
Akimoto
10:15 – 10:30 Coffee and tea break
Chairman: Prof. Hikaru Kobayashi
cells
Ferromagnetic/Organic Interfaces
for Spintronic Applications
Non-radiative recombination
centers in Cu(In,Ga)Se2
10:30 – 11:10 Heike Angermann Interface states and recombination
losses on textured Si substrates
after wet-chemical conditioning
11:10 – 11:50 Vitaly L.
Alperovich
Atomic smoothing of GaAs surface
in equilibrium conditions
11:50 – 12:15 Han Zuilhof Surface Modification of Oxide-free
Silicon Surfaces with Covalently
bound Organic Monolayers: Better,
12:15 – 13:30 Lunch
Chairman: Prof. Thomas Chassé
Stronger, Faster!
13:30 – 14:10 Jun Xu Preparation of size-controllable Si
quantum dot multilayers for
photonic and photovoltaic
14:10 – 14:50 Jaroslav Kováč
14:50 – 15:05 Coffee and tea break
applications
Micro Raman spectroscopy
diagnostics of semiconductor
structures and devices
Florence, Italy
Institute of Scientific and
Industrial Research and
CREST, Osaka University,
Japan
Chemnitz University of
Technology, Chemnitz,
Germany
Tsukuba University,
Tsukuba, Ibaraki, Japan
Helmholtz-Zentrum für
Materialien und Energie
GmbH, Institute für
Silizium-Photovoltaik,
Berlin, Germany
Institute of Semiconductor
Physics, Novosibirsk, Russia
Wageningen University
and Research Center,
Wageningen, The
Netherlands
School of Electronic
Science and Engineering,
Nanjing University,
Nanjing, China
FEEIT, Institute of
Electronics and Photonics
of Slovak University of
Technology, Bratislava,
Slovak Republic

Continuation Monday, 14 May 2012
Chairman: Prof. Shigeru Masuda and Prof. Kazuyuki Edamoto
15:05 – 15:45 Pavel Šutta
15:45 – 16:25 Stanislav Jurečka
Microstructure determination of
microcrystalline-Si:H films analysing
the breadths of diffraction and
spectral lines of XRD, FTIR and
Raman spectroscopies
Physics-based models for evaluating
of MOS capacitors with ultrathin
oxide layer
16:25 – 16:50 Andrzej Bartnik Surface modifications of polymers
irradiated with EUV pulses in
vacuum or gaseous environment
16:50 – 17:15 Zeinab Arab Density of states of the graphene
sheets under perturbation of the
Hamiltonian due to the variation of
surface morphology
17:15 – 17:50 Mária
Hartmanová
20:00 – 22:30 Welcome party in Hotel LAURUS
Influence of Deposition Conditions
on Electrical and Mechanical
Properties of Sm2O3-doped CeO2
Thin Films Prepared by EB-PVD
(+IBAD) methods.
Part 1: Effective Relative Dielectric
Permittivity
New Technologies –
Research Center,
University of West
Bohemia, Plzeň,
Czech Republic
University of Žilina, Slovak
Republic
Institute of Optoelectronics,
Military University of
Technology,Warsaw,
Poland
Plasma Research Center,
Science and Research
Branch, Islamic Azad
University Hesarak-
Pounak, Tehran, Iran
Institute of Physics SAS,
Bratislava, Slovakia

Tuesday, 15 May 2012
7:00 – 8:00 Breakfast
Chairman: Prof. D.R.T. Zahn
8:00 – 8:40 Roman
Sobolewski
8:40 – 9:20 Renato S.
Gonnelli
9:20 – 10:00 Kazuyuki
Edamoto
10:00 – 10:15 Coffee and tea break
Chairman: Prof. Roman Sobolewski
10:15 – 10:55 Giovanni Piero
Pepe
Femtosecond time-resolved studies
of carrier and spin dynamics in alloxide
superconductor/ferromagnet
proximitized nanobilayers
Huge field-effect surface charge
injection and conductance
modulation in metal thin films by
electrochemical gating
The electronic properties of
transition metal phosphide surfaces:
Angle-resolved and resonant
photoemission studies
Self-assembled plasmonic arrays
based on block-copolymer
nanostructures: transport and
optical properties
10:55 – 11:35 Jozef Novák ZnO/GaP Nanowires Prepared by
Combination of MOVPE growth and
RF sputtering
11:35 – 12:15 Shigeru Masuda A new characterization of electronic
states at organic–metal interface
12:15 – 13:30 Lunch
Chairman: Prof. Giovanni Piero Pepe
13:30 – 14:10 Shira Yochelis Quantum Devices Using Monolayer
Hybrid Surfaces
14:10 – 14:50 Štefan Chromik Significant increasing of onset
temperature of FM transition in
LSMO thin films
14:50 – 15:15 Hyung-Ho Park Nanoporous TiO2 xerogel for carbon
15:15 – 15:40 Ivo A.
Hümmelgen
monoxide sensor
Carbon Sphere based Composite
Thin Films Applications in Organic
Memory Devices
15:40 – 16:10 Paolo Redi Solar Energy News in
16:10 – 16:30 Michal Ružinský
STechnologies
History and the Present Time of
Solar Car Races in the World
16:30 – 18:00 POSTER Session I with refreshment, coffee, tea, etc.
University of Rochester,
Rochester, USA, and
Institute of Electron
Technology, Warsaw,
Poland
Dipartimento di Scienza
Applicata e Tecnologia,
Politecnico di Torino,
Torino, Italy
Rikkyo University, Toshima,
Tokyo, Japan
Universita di Napoli
·Federico II·, Napoli, Italy
Institute of Electrical
Engineering SAS,
Bratislava, Slovakia
Department of Basic
Science, The University of
Tokyo, Japan
Applied Physics Dept.
The Hebrew University of
Jerusalem, Israel
Institute of Electrical
Engineering SAS,
Bratislava, Slovakia
Yonsei University, Seoul,
Korea
Departamento de Física,
Universidade Federal do
Paraná, Curitiba PR,
Brazil
STechnologies, Prato,
Firenze, Italy
Institute of Power and
Applied Electrical
Engineering of FEEIT of
SUT, Bratislava, Slovakia

Wednesday, 16 May 2012
7:00 – 8:00 Breakfast
Chairman Prof. Renato S. Gonnelli
8:00 – 8:40 Toshiaki Makabe Influence of gas heating on a plasma
structure in an rf-microcell in Ar
8:40 – 9:20 Uros Cvelbar Large scale production of metaloxide
nanowires for next step
9:20 – 10:00 Peter Švec Formation, structure and properties
of mono, bi and tri-layered rapidly
quenched ribbons
10:00 – 10:15 Coffee and tea break
Chairman: Prof. Toshiaki Makabe
10:15 – 10:55 Helena Glesková Ultra-thin, inorganic-organic
dielectric bi-layers as gate dielectrics
in organic thin-film transistors
10:55 – 11:35 Ratiba
Outemzabet
11:35 – 12:00 Roman
Sobolewski
12:00 – 13:30 Lunch
Competition and transition between
oxides and silicon hydrides at
anodised Silicon/HF interface
Time-resolved carrier relaxation
dynamics in thin Si films for
photovoltaics applications
Chairman: Prof. Helena Glesková and Prof. Amarjeet Kaur
13:30 – 14:10 Alexander Šatka Electron beam induced current
investigation of GaN-based
heterostructure field-effect
transistors
14:10 – 14:50 Amarjeet Kaur Conduction Mechanism in Organic
and Organic/Inorganic Hybrid
Systems with Application to Organic
Solar Cells
14:50 – 15:15 Dušan Pudiš 2D photonic structure patterned in
the LED surface by interference
lithography
15:15 – 15:40 Tomáš Pleceník Scanning Spreading Resistance
Microscopy Studies of
YBa2Cu3O6+x Surface
Conductivity Properties
15:40 – 16:05 Zahra Abdolahi Growth of graphene on iron foil by
plasma enhanced chemical vapor
deposition
Keio University, Yokohama,
Japan
Jozef Stefan Institute,
Ljubljana, Slovenia
Institute of Physics SAS,
Bratislava, Slovakia
Department of Electronic
and Electrical Engineering,
University of Strathclyde,
Glasgow, United Kingdom
Universite des Sciences et
de la Technologie Honari
Boumedienne,
Alger, Algéria
University of Rochester,
Rochester, USA, and
Institute of Electron
Technology, Warsaw,
Poland
FEEIT Slovak University of
Technology, Bratislava,
Slovakia
Department of Physics and
Astrophysics, University of
Delhi, Delhi, India
Dept. of Physics, Faculty of
Electrical Engineering,
University of Žilina, Žilina,
Slovakia
Faculty of Mathematics,
Physics and Informatics,
Comenius University,
Bratislava, Slovakia
Plasma Physics Research
Center, Science and
Research Branch, Islamic
Azad University,

16:05 – 16:30 Liping Dai The etching reaction and surface
reconstruction of bismuth zinc
Ľubica
Pinčíková
Margarethe
Kampling
Pavol
Gašpierik
niobate thin film in SF6/Ar plasma
16:30 – 18:00 POSTER Session II with refreshment, coffee, tea, etc.
Thursday, 17 May 2012
7:00 – 8:00 Breakfast
Chairman Dr. Shira Yochelis
8:00 – 8:40 Thomas Chassé Electronic interactions at transition
metal phthalocyanine – metal
interfaces
8:40 – 9:20 Taketoshi
Matsumoto
9:20 – 10:00 Zsolt Jozsef
Horváth
10:00 – 10:15 Coffee and tea break
Chairman: Prof. Alexander Šatka
Application of Ultra-thin SiO2 Layer
Formed by the Nitric Acid Oxidation
of Si (NAOS) Method to Stacked
Gate Oxide in Thin Film Transistors
(TFT)
Silicon nitride based non-volatile
memory structures with embedded
semiconductor nanocrystals
10:15 – 10:55 Aarne Kasikov Transmission spectrometry vs
spectral ellipsometry: Bruggeman
EMA layer revisited
10:55 – 11:35 Cesare Frigeri Evolution of the structure and
hydrogen configuration in annealed
hydrogenated a-Si/a-Ge multilayers
and layers
11:35 – 12:00 Peter Bury Characterization of Interface States
in MOS Structures with Ultra-thin
Oxides by Acoustic spectroscopy.
12.00 Conclusion
12:30 – 22:30 Trip to Assissi (organized by Promo Florence Events)
Exhibitions
European Heritage of Slovak Republic
Monuments Board of Slovak Republic
SPECS Surface Nano Analysis GmbH
Berlin, Germany
Technical Due Diligence for REN – view of TUV SUD company,
TÜV SÜD Slovakia s.r.o
Tehran, Iran
University of Electronic
Science and Technology of
China, Chengdu, China
Institute für Physikalische
Chemie, Universität
Tübingen, Tübingen,
Germany
Institute of Scientific and
Industrial Research and
CREST, Japan Science and
Technology Agency, Osaka
University, Japan
Óbuda University and
Research Institute for
Technical Physics and
Materials Science HAS,
Budapest, Hungary
Institute of Physics,
University of Tartu, Tartu,
Estonia
Istituto CNR-IMEM
(formerly CNR-MASPEC),
Fontanini, PARMA,
Italy
Department of Physics,
Faculty of Electrical
Engineering of University
of Žilina, Slovak Republic

Friday, 18 May 2012
Approx.
8:00 – 22:00
Whole day trip to Cinque Terre (organized by Promo Florence Events)