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IEEE Photonics Conference 2012

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TECHNICAL PROGRAM MONDAY 24 SEPTEMBER <strong>2012</strong><br />

GRAND BALLROOM F GRAND BALLROOM G HARBOUR ROOM A GRAND BALLROOM A<br />

8:30 AM - 10:00 AM<br />

Session ME: PON<br />

Session Chair: TBD<br />

8:30 AM - 10:00 AM<br />

Session MF: Quantum Dot Sources<br />

Session Chair: Huiyun Liu, University<br />

College London, London, UK<br />

8:30 AM - 10:00 AM<br />

Session MG: Plasmonic based<br />

Photovoltaics<br />

Session Chair: Mark L. Brongersma,<br />

Stanford University, Stanford, CA, USA<br />

8:30 AM - 10:00 AM<br />

Session MH: OI I - Devices<br />

Session Chair: Eric Johnson, Clemson<br />

University, Clemson, SC, USA<br />

ME1 8:30 AM - 8:45 AM<br />

Bidirectional Uncompressed HD Video<br />

Distribution over Fiber Employing<br />

VCSELs, J. Estaran, J. J. Vegas Olmos,<br />

G. A. Rodes and I. T. Monroy, Technical<br />

University of Denmark, Kgs Lyngby, Denmark<br />

We report on a bidirectional system in which<br />

VCSELs are simultaneously modulated with two<br />

uncompressed HD video signals. The results<br />

show a large power budget and a negligible<br />

penalty over 10 km long transmission link.<br />

MF1 8:30 AM - 9:00 AM (Invited)<br />

Quantum Dots for Lasers and Light-<br />

Emitting Diodes, N. N. Ledentsov, VI Systems<br />

GmbH, Berlin, Germany<br />

Self-organized quantum dots (QDs) applied to<br />

light-emitting devices extend their spectral range,<br />

temperature stability and allow new approaches<br />

including single photon emitters and multiwavelength<br />

lasers and light-emitting diodes.<br />

MG1 8:30 AM - 9:00 AM (Invited)<br />

Light Trapping in Plasmonic<br />

Photovoltaics, V. Ferry, Lawrence Berkeley<br />

National Laboratory, Berkeley, CA, USA<br />

Plasmonic and nanophotonic structures enable<br />

the manipulation and molding of light in<br />

nanoscale devices. These nanostructures are<br />

designed and integrated to achieve broadband<br />

photocurrent enhancement in ultrathin film<br />

photovoltaics.<br />

MH1 8:30 AM - 9:00 AM (Invited)<br />

Nano-Photonic Technologies for Optical<br />

Interconnects, Y. Fainman, University of<br />

California - San Diego, La Jolla, CA, USA<br />

ABSTRACT NOT AVAILABLE<br />

ME2 8:45 AM - 9:00 AM<br />

Extended Gain Bandwidth low Ripple<br />

Hybrid Raman-Parametric Amplifier<br />

Design for PON Applications, S. Peiris,<br />

N. Madamopoulos, City College of New<br />

York/CUNY, New York, NY, USA, N. Antoniades,<br />

College of Staten Island/CUNY, Staten Island, NY,<br />

USA, M. A. Ummy, New York City College of<br />

Technology, New York, NY, USA, R. Dorsinville<br />

and M. A. Ali, City College of New York/CUNY,<br />

New York, NY, USA<br />

A hybrid Raman-OPA amplifier with 190nm<br />

bandwidth, and 13-fold enhancement<br />

in a 7.5 nm thin-film absorber yielding a<br />

maximum absorption of 74.4%. Broadband and<br />

wide-angle absorption is demonstrated.<br />

MH2 9:00 AM - 9:15 AM<br />

A New Approach to Ge Lasers with Low<br />

Pump Power, X. Chen, Y. Huo, E. Fei,<br />

G. Shambat, K. Zang, X. Liu, Y. Chen,<br />

T. I. Kamins, J. Vuckovic and J. S. Harris,<br />

Stanford University, Stanford, CA, USA<br />

We present direct bandgap photoluminescence<br />

from carrier confinement in Ge/SiGe quantum<br />

wells (QWs) in a microdisk. Simulation and<br />

experimental results indicate this structure has<br />

great potential to serve as a low pump power Ge<br />

laser.<br />

ME4 9:15 AM - 9:30 AM<br />

Fiber-Pigtailed Optical Switch based on<br />

Gigantic Bloch-Surface-Wave-Induced<br />

Goos-Hanchen Shifts, Y. Wan, W. Kong,<br />

Z. Zheng, X. Zhao, Y. Liu and Y. Bian, Beihang<br />

University, Beijing, China<br />

On-off optical switching based on the Blochsurface-wave<br />

enhanced Goos-Hanchen effect is<br />

demonstrated for the first time by changing the<br />

medium in a flowcell that serves as the cladding<br />

of a truncated one-dimensional photonic crystal.<br />

MF3 9:15 AM - 9:30 AM<br />

Modelling the Gain Compression Effects<br />

in Semiconductor Quantum-Dot Lasers<br />

through a New Modulation Transfer<br />

Function, C. Wang, F. Grillot and J. Even,<br />

Institut National des Sciences Appliquees de<br />

Rennes, Rennes, France<br />

Impacts of gain compression on modulation<br />

properties of quantum dot lasers are investigated<br />

with a new modulation transfer function derived<br />

from a semi-analytical approach. Results show<br />

that non-linear gain causes severe degradations<br />

in laser dynamics.<br />

MG3 9:15 AM - 9:45 AM (Invited)<br />

Plasmonics for III-V Semiconductor Solar<br />

Cells, S. Mokkapati, H. F. Lu, S. Turner, L. Fu,<br />

H. H. Tan and C. Jagadish, Australian National<br />

University, Canberra, Australia<br />

Surface plasmons supported by metal nanoparticles<br />

can be used to enhance the performance of<br />

solar-cells based on III-V semiconductors. We<br />

present results on plasmonic quantum-dot solarcells<br />

and discuss the role of plasmonics for<br />

nanowire solar-cells.<br />

MH3 9:15 AM - 9:30 AM<br />

Low-Power Monolithic COMB Laser for<br />

Short-Reach WDM Optical Interconnects,<br />

A. E. Gubenko, S. S. Mikhrin, V. Mikhrin,<br />

I. L. Krestnikov and D. A. Livshits, Innolume<br />

GmbH, Dortmund, Germany<br />

16+ low-noise optical comb lines with 80 GHz<br />

spacing and 0 dBm/line output power are generated<br />

by a single InAs/GaAs quantum dot (QD)<br />

Fabry-Perot laser. Electrical power consumption<br />

is reduced dramatically down to 6 mW/line.<br />

Page 23

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