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TECHNICAL PROGRAM WEDNESDAY 26 SEPTEMBER <strong>2012</strong><br />
HARBOUR ROOM B GRAND BALLROOM B GRAND BALLROOM C GRAND BALLROOM E<br />
8:30 AM - 9:30 AM<br />
Session WA: Tutorial III<br />
Session Chair: Thomas R. Clark, Johns<br />
Hopkins University, Laurel, MD, USA<br />
8:30 AM - 10:00 AM<br />
Session WB: NLO & Linear-Optical<br />
Devices<br />
Session Chair: Yujie J. Ding, Lehigh<br />
University, Bethlehem, PA, USA<br />
8:30 AM - 10:30 AM<br />
Session WC: Novel Inorganic LEDs<br />
Session Chair: TBD<br />
8:30 AM - 10:00 AM<br />
Session WD: Integrated Optical<br />
Sensors<br />
Session Chair: Sarath D. Gunapala, Jet<br />
Propulsion Laboratory, Pasadena, CA, USA<br />
WA1 8:30 AM - 9:30 AM (Tutorial)<br />
Microwave Photonic Filters, L. Maleki,<br />
OEwaves, Inc., Pasadena, CA, USA<br />
ABSTRACT NOT AVAILABLE<br />
WB1 8:30 AM - 9:00 AM (Invited)<br />
Nonlinear Diffusion Model for Annealed<br />
Proton-Exchanged Waveguides in<br />
Zirconium-doped Lithium Niobate,<br />
C. Langrock, Stanford University, Stanford, CA,<br />
USA, R. V. Roussev, Corning, Inc., NY, USA and<br />
M. M. Fejer, Stanford University, Stanford, CA,<br />
USA<br />
We are presenting the development of a<br />
nonlinear diffusion model to aid the design and<br />
fabrication of annealed proton-exchanged (APE)<br />
channel waveguides in zirconium-doped lithium<br />
niobate (Zr:LiNbO 3 or Zr:LN). This work follows<br />
research at Stanford by Bortz [1, 8] and Roussev<br />
[2], who developed nonlinear diffusion models<br />
for congruently melting LiNbO 3 (CLN).<br />
WC1 8:30 AM - 9:00 AM (Invited)<br />
Advances in GaN Semiconductors for<br />
Energy Efficienct Solid State Lighting,<br />
S. P. DenBaars, C.-C. Pan, N. Pfaff, S. Tanaka,<br />
J. S. Speck and S. Nakamura, University of<br />
California – Santa Barbara, CA, USA<br />
LEDs fabricated from gallium nitride have lead to<br />
the realization of high-efficiency white solid-state<br />
lighting. Currently, GaN white LEDs exhibit<br />
luminous efficacy greater than 150 lm/Watt, and<br />
external quantum effiencies higher than 60%.<br />
This has enabled LEDs to compete with traditional<br />
lighting technologies such as incandescent<br />
and CFL. Further improvements in materials<br />
quality and cost reduction are necessary for<br />
wide-spread adoption of LEDs for lighting. A<br />
review of the unique polarization anisotropy in<br />
GaN is included for the different crystal orientations.<br />
Emphasis on nonpolar LEDs will highlight<br />
high-power violet and blue emitters and<br />
considers the effects of indium incorporation and<br />
substrate miscut. Recently, semipolar LEDs have<br />
demonstrated high EQE of 50% at high current<br />
densities. Semipolar GaN materials have enable<br />
the development of LEDs in green, and recent<br />
achievements of green laser diodes at 520nm.<br />
WD1 8:30 AM - 9:00 AM (Invited)<br />
Ultra-Compact Multiplexed Lab-on-Chip<br />
Sensors Using Miniaturized Integrated<br />
Photonic Resonators, A. A. Eftekhar, Z. Xia,<br />
F. Ghasemi and A. Adibi, Georgia Institute of<br />
Technology, Atlanta, GA, USA<br />
We present a highly-sensitive and selective<br />
multiplexed sensing platform based on an array<br />
of compact resonators in a small footprint on<br />
chip. The application of this sensing platform for<br />
multiplexed bio and gas sensing will be<br />
discussed.<br />
WB2 9:00 AM - 9:15 AM<br />
Novel Technology for Producing LiNbO 3<br />
Nonlinear Optical Waveguides, X. Mu,<br />
H. E. Meissner and S. K. Meissner, Onyx Optics<br />
Inc., Dublin, CA, USA<br />
The birefringent property of LiNbO 3 (LN) is used<br />
for producing nonlinear optical and electrooptical<br />
waveguides with adhesive-free bonding<br />
(AFB) technology. Cerenkov type secondharmonic<br />
generation (CSHG) has been observed.<br />
WC2 9:00 AM - 9:30 AM (Invited)<br />
Ultrahigh-Efficiency Phosphor-Free<br />
InGaN/GaN Nanowire White Light-<br />
Emitting Diodes on Silicon, Z. Mi,<br />
H. P. T. Nguyen, S. Zhang and M. Djavid, McGill<br />
University, Montreal, QC, Canada<br />
We report on the achievement of InGaN/GaN dotin-a-wire<br />
phosphor-free white light-emitting<br />
diodes, which can exhibit a record internal<br />
quantum efficiency of ~57% and virtually zero<br />
efficiency droop for injection currents up to<br />
~2,200 A/cm 2 .<br />
WD2 9:00 AM - 9:15 AM<br />
Light-Emitting Diodes Operating Above<br />
Unity Efficiency for Infrared Absorption<br />
Spectroscopy, P. Santhanam and R. J. Ram,<br />
Massachusetts Institute of Technology,<br />
Cambridge, MA, USA<br />
Recent work has experimentally demonstrated<br />
that heated infrared light-emitting diodes can<br />
absorb lattice heat to generate photons above<br />
unity efficiency. We present new record-high<br />
conversion efficiencies and use these sources for<br />
absorption spectroscopy at 2.5um.<br />
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