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IEEE Photonics Conference 2012

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TECHNICAL PROGRAM WEDNESDAY 26 SEPTEMBER <strong>2012</strong><br />

HARBOUR ROOM B GRAND BALLROOM B GRAND BALLROOM C GRAND BALLROOM E<br />

8:30 AM - 9:30 AM<br />

Session WA: Tutorial III<br />

Session Chair: Thomas R. Clark, Johns<br />

Hopkins University, Laurel, MD, USA<br />

8:30 AM - 10:00 AM<br />

Session WB: NLO & Linear-Optical<br />

Devices<br />

Session Chair: Yujie J. Ding, Lehigh<br />

University, Bethlehem, PA, USA<br />

8:30 AM - 10:30 AM<br />

Session WC: Novel Inorganic LEDs<br />

Session Chair: TBD<br />

8:30 AM - 10:00 AM<br />

Session WD: Integrated Optical<br />

Sensors<br />

Session Chair: Sarath D. Gunapala, Jet<br />

Propulsion Laboratory, Pasadena, CA, USA<br />

WA1 8:30 AM - 9:30 AM (Tutorial)<br />

Microwave Photonic Filters, L. Maleki,<br />

OEwaves, Inc., Pasadena, CA, USA<br />

ABSTRACT NOT AVAILABLE<br />

WB1 8:30 AM - 9:00 AM (Invited)<br />

Nonlinear Diffusion Model for Annealed<br />

Proton-Exchanged Waveguides in<br />

Zirconium-doped Lithium Niobate,<br />

C. Langrock, Stanford University, Stanford, CA,<br />

USA, R. V. Roussev, Corning, Inc., NY, USA and<br />

M. M. Fejer, Stanford University, Stanford, CA,<br />

USA<br />

We are presenting the development of a<br />

nonlinear diffusion model to aid the design and<br />

fabrication of annealed proton-exchanged (APE)<br />

channel waveguides in zirconium-doped lithium<br />

niobate (Zr:LiNbO 3 or Zr:LN). This work follows<br />

research at Stanford by Bortz [1, 8] and Roussev<br />

[2], who developed nonlinear diffusion models<br />

for congruently melting LiNbO 3 (CLN).<br />

WC1 8:30 AM - 9:00 AM (Invited)<br />

Advances in GaN Semiconductors for<br />

Energy Efficienct Solid State Lighting,<br />

S. P. DenBaars, C.-C. Pan, N. Pfaff, S. Tanaka,<br />

J. S. Speck and S. Nakamura, University of<br />

California – Santa Barbara, CA, USA<br />

LEDs fabricated from gallium nitride have lead to<br />

the realization of high-efficiency white solid-state<br />

lighting. Currently, GaN white LEDs exhibit<br />

luminous efficacy greater than 150 lm/Watt, and<br />

external quantum effiencies higher than 60%.<br />

This has enabled LEDs to compete with traditional<br />

lighting technologies such as incandescent<br />

and CFL. Further improvements in materials<br />

quality and cost reduction are necessary for<br />

wide-spread adoption of LEDs for lighting. A<br />

review of the unique polarization anisotropy in<br />

GaN is included for the different crystal orientations.<br />

Emphasis on nonpolar LEDs will highlight<br />

high-power violet and blue emitters and<br />

considers the effects of indium incorporation and<br />

substrate miscut. Recently, semipolar LEDs have<br />

demonstrated high EQE of 50% at high current<br />

densities. Semipolar GaN materials have enable<br />

the development of LEDs in green, and recent<br />

achievements of green laser diodes at 520nm.<br />

WD1 8:30 AM - 9:00 AM (Invited)<br />

Ultra-Compact Multiplexed Lab-on-Chip<br />

Sensors Using Miniaturized Integrated<br />

Photonic Resonators, A. A. Eftekhar, Z. Xia,<br />

F. Ghasemi and A. Adibi, Georgia Institute of<br />

Technology, Atlanta, GA, USA<br />

We present a highly-sensitive and selective<br />

multiplexed sensing platform based on an array<br />

of compact resonators in a small footprint on<br />

chip. The application of this sensing platform for<br />

multiplexed bio and gas sensing will be<br />

discussed.<br />

WB2 9:00 AM - 9:15 AM<br />

Novel Technology for Producing LiNbO 3<br />

Nonlinear Optical Waveguides, X. Mu,<br />

H. E. Meissner and S. K. Meissner, Onyx Optics<br />

Inc., Dublin, CA, USA<br />

The birefringent property of LiNbO 3 (LN) is used<br />

for producing nonlinear optical and electrooptical<br />

waveguides with adhesive-free bonding<br />

(AFB) technology. Cerenkov type secondharmonic<br />

generation (CSHG) has been observed.<br />

WC2 9:00 AM - 9:30 AM (Invited)<br />

Ultrahigh-Efficiency Phosphor-Free<br />

InGaN/GaN Nanowire White Light-<br />

Emitting Diodes on Silicon, Z. Mi,<br />

H. P. T. Nguyen, S. Zhang and M. Djavid, McGill<br />

University, Montreal, QC, Canada<br />

We report on the achievement of InGaN/GaN dotin-a-wire<br />

phosphor-free white light-emitting<br />

diodes, which can exhibit a record internal<br />

quantum efficiency of ~57% and virtually zero<br />

efficiency droop for injection currents up to<br />

~2,200 A/cm 2 .<br />

WD2 9:00 AM - 9:15 AM<br />

Light-Emitting Diodes Operating Above<br />

Unity Efficiency for Infrared Absorption<br />

Spectroscopy, P. Santhanam and R. J. Ram,<br />

Massachusetts Institute of Technology,<br />

Cambridge, MA, USA<br />

Recent work has experimentally demonstrated<br />

that heated infrared light-emitting diodes can<br />

absorb lattice heat to generate photons above<br />

unity efficiency. We present new record-high<br />

conversion efficiencies and use these sources for<br />

absorption spectroscopy at 2.5um.<br />

Page 46

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