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Computational study on transamination of alkylamides with NH3 ...

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ARTICLE IN PRESSY.S. W<strong>on</strong> et al. / Journal <strong>of</strong> Crystal Growth 311 (2009) 3587–3591 35892p+Dimethylamine2t42.4 ‡TS42.427.6Intermediate2i28.9 ‡ 56.5TBTDMT0.0Fig. 2. Calculated energetics <strong>of</strong> the b-hydride eliminati<strong>on</strong> <strong>of</strong> TBTDMT to generate Ta(MeNCH 2 )(NMe 2 )[(N(t-Bu)]. Energies are reported in kcal/mol.3t-a9.43p-aTSTBTDMT+ NH 312.1 ‡+0.0TBTDMT•NH 3 - 2.7 - 3.0Dimethylamine3t-b23t-b1TS231.2TS119.83i-b31.53p-bTBTDMT+ NH 30.022.5TBTDMT•NH 3Intermediate -0.3- 2.72.4+t-butylamineFig. 3. Calculated energetics <strong>of</strong> the transaminati<strong>on</strong> <strong>of</strong> a dimethylamido ligand (a) and tert-butylamido ligand (b) <strong>of</strong> TBTDMT <strong>with</strong> NH 3 . Energies are reported in kcal/mol.Table 1Calculated rate c<strong>on</strong>stants for selected individual steps in the decompositi<strong>on</strong> <strong>of</strong>TBTDMT at different temperatures.Entry Reacti<strong>on</strong>saE a ln A a k(s 1 )(kcal/mol)25 1C 3001C 6001C1 TBTDMT-2t 36.7 18.4 2.7 10 19 9.5 10 8 0.42 TBTDMT NH 3 -3t-a 13.2 30.1 2.5 10 3 1.2 10 8 5.6 10 93 TBTDMT NH 3 -3t-b1 23.7 30.2 5.1 10 5 1.2 10 4 1.4 10 74 3i-b-3t-b2 32.2 33.4 7.6 10 10 1.6 10 2 2.8 10 6a E aand A are the activati<strong>on</strong> energy and pre-exp<strong>on</strong>ential factor in theArrhenius form, k=A exp( E a /RT), obtained from the plot <strong>of</strong> the calculated ratec<strong>on</strong>stant vs. temperature.order <strong>of</strong> magnitude even at an elevated temperature <strong>of</strong> 600 1C. Inc<strong>on</strong>trast, the dimethylamido ligand exchange was calculated to bekinetically competent for film growth, while tert-butylimidoligand exchange was significantly slower due to its relativelyhigher barrier (Fig. 3b).These calculati<strong>on</strong>s are c<strong>on</strong>sistent <strong>with</strong> a switch to a transaminati<strong>on</strong>pathway lowering the growth temperature when TBTDETwas used in the presence <strong>of</strong> NH 3 (growth at 300–375 1C, comparedto 500–650 1C <strong>with</strong> TBTDET as a single-source precursor) andexplains the efficient removal <strong>of</strong> carb<strong>on</strong>-c<strong>on</strong>taining ligands in thepresence <strong>of</strong> NH 3 compared to the facilitated carb<strong>on</strong> incorporati<strong>on</strong>in the deposited films via a self-decompositi<strong>on</strong> pathway (Fig. 2)[2–4,24–26]. Similar reacti<strong>on</strong>s are likely to be involved in the use

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