CALL FOR PAPERS - II-VI Workshop

CALL FOR PAPERSThe 2008 U.S. WORKSHOP on the PHYSICSand CHEMISTRY of II-VI MATERIALSThe Riviera HotelNovember 11–13, 2008Las Vegas, NevadaII-VI Detector MaterialsSpecial Sessions• IR• ZnO Materials and Devices• UV• Surfaces and Interfaces• Gamma-Ray• Alternative CdTe Substrates• X-Ray• HgCdTe Avalanche Photodiodes• HgCdTe • Superlattices: Strained & Unstrained• CdZnTe• ZnO• X-Ray & Gamma-Ray Detectors• II-VI Based Solar Cells• Near-Room Temperature IR Detectors• Multi-Band Detectors in HgCdTeParticipating AgenciesU.S. Army RDECOM CERDEC Night Vision & ElectronicSensors DirectorateU.S. Army Research LaboratoryU.S. Army SMDCU.S. Navy Electro-Optics CenterPenn State UniversityOffice of Naval ResearchAir Force Research LaboratoryThe Minerals, Metals & Materials SocietyEndorsed byThe American Physical Societyhttp://www.ii-viworkshop.org

2008 II-VI WORKSHOPPurposeThe purpose of this Workshop is to bring togetherthe industrial, governmental, and academic communitiesthat work with II-VI materials. These II-VI materialsare critical in a wide range of detector technologiesoperating in the infrared, ultraviolet, x-ray, and gammarayregions of the spectrum. They include HgCdTe,ZnSe, ZnO, and CdTe, as well as other II-VI semiconductorsand alloys. Spectrometers, imagers, and othersophisticated systems exploiting various properties ofthese materials are finding applications in many fieldsincluding national security, homeland security, medicine,industrial process monitoring, basic science, andmore. The Workshop aims at advancing the understandingof the basic physics and chemistry of thesematerials, and thereby contributes to the continualimprovement of these system capabilities.Areas of InterestAreas covered include a broad range of disciplinesand materials properties. Included are materialsgrowth and characterization, materials engineering,intrinsic and extrinsic defects and dopants, surfacechemistry, fabrication processes, electrical propertiesand modeling, charge transport, noise sources, opticalproperties, electro-optical and magneto-opticalproperties, as well as the interaction among all these.Workshop FormatThe Workshop program will consist of about 60 oralpresentations. Invited and contributed papers with acommon theme will be grouped for presentation.To provide ample time for discussion, scheduledmorning and afternoon breaks, as well as lunch, canbe used as additional discussion time. To further promoteinformal discussion and interaction, the first daywill conclude with a wine and cheese receptionaccompanied by tabletop displays from commercialvendors displaying products and services of interestto the Workshop community.Authors of accepted papers are encouraged to submitfull-length manuscripts, which will be peer reviewedand published as part of the Workshop proceedings in aspecial issue of the Journal of Electronic Materials.Student participation is strongly encouraged. Anaward recognizing the best student paper will be presentedat the conclusion of the Workshop. Fundingexists to support travel to the Workshop. Some studentfinancial assistance is available for conferenceattendees.

Keynote AddressThis year’s Keynote Address, “It’s Too Early toQuit!: Today’s Success Is Not Sufficient to FulfillTomorrow’s Requirements,” will be presented byMs. Lyn E. Brown and Dr. Alan Hahn, U.S. Air ForceResearch Laboratory.Invited SpeakersThe following distinguished speakers have acceptedto give invited talks at the Workshop:• ZnO:Prof. YiCheng Lu, Electrical and ComputerEngineering Dept., Rutgers University• Strained- and Unstrained-Layer Superlattices:Prof. Christoph Grein, Physics Department,University of Illinois at Chicago• CdZnTe Radiation Detectors:Dr. Ralph James, Associate Laboratory Directorfor Energy, Environment, & National Security,Brookhaven National Laboratory• Alternative CdTe Substrates:Dr. Michael Carmody, EPIR Technologies• II-VI-Based Solar Cells:Dr. Tim Coutts, NREL• Surfaces and InterfacesDr. David J. Benson, NVESDProf. Robert Sporken, University of Namur(FUNDP)• Doping in HgCdTePlease check the Web site for the most up-to-datelist of speakers.Special TopicsSubmissions are encouraged in the following emergingareas of interest to the Workshop community:• Materials and Physics of Failure• Non-Destructive Characterization• Multiband Detector Development• Near-Room-Temperature IR Devices• HgCdTe Avalanche Photodiodes• ZnO Materials and Devices• II-VI-Based Solar Cells• Radiation Detectors• Alternative CdTe Substrates• Radiation Effects in HgCdTe

TOPICSThe scope of the Workshop includes the basicphysics and chemistry of all II-VI materials andtheir applications. Materials of interest includeHgCdTe, ZnSe, ZnO, CdTe, and CdZnTe. Issuesin the following critical areas are of interest:• Emerging Detector Technologies• Multiband Detector Development• Near-Room-Temperature IR Devices• HgCdTe Avalanche Photodiodes• ZnO Materials and Devices• Two-Color Detector Technologies• Materials Growth and Device Engineering• Control of composition, carrier concentration,and lifetime• Novel material and device structures• Modeling of growth and processing• Equilibrium and non-equilibrium growth• Substrates: CdZnTe and Silicon-BasedAlternatives• Defects and Doping• Physics of Failure• Effect on electrical and optical properties• Thermodynamics• P-doping issues• Impurities• Diffusion• Activation and segregation• Surfaces and Interfaces• Etching, passivation, and metallization• Modeling and Simulation• Material properties• Growth and processing• Device physics• Characterization of Materials• Electrical, optical, and microstructuralcharacterization• Defects and impurities• Contactless and other non-destructivemethods• Device-material correlations• Radiation Detectors• Radiation Effects in HgCdTe• II-VI-Based Solar Cells

CALL FOR PAPERSPapers describing significant advances in thestate of the art of scientific results and the understandingin the Workshop issues are solicited.Experimental results or theoretical results addressingexperiments are encouraged. Emphasis shouldbe on new fundamental physics and chemistry ofmaterials for detector applications. Abstracts mustcontain results to be considered.Papers will be selected on the basis of (1)originality, (2) significance of results, (3) qualityand completeness of the research, and (4)breadth of interest.Extended abstracts of all accepted papers willbe published in the Book of Extended Abstracts,which will be distributed at the Workshop.Submitted full-length manuscripts, after peerreview, will be published in the Journal ofElectronic Materials.

ABSTRACTS1. Abstracts, suitable for publication, shouldclearly indicate the following:a. original aspects of researchb. objective and approach of workc. previous publications or presentationsd. experimental datae. scientific implications of results2. One-page abstracts should be double spacedon a single 8 1 / 2 × 11 sheet. One (1) additionalpage of supporting figures will be accepted andis encouraged. The title, author(s), and affiliation(s)must be included.3. A complete mailing address (phone, fax, ande-mail) of the presenter must be included.4. Abstracts to be considered as student papersmust be identified as such, and the name of theadvisor must also be included.5. Abstracts are to be submitted beforeJune 30, 2008 to:Palisades Convention ManagementThe 2008 II-VI WorkshopAttn: Ralph Nadell411 Lafayette Street, Suite 201New York, NY 10003212/460-8090, ext. 203, fax -5460e-mail: Rnadell@pcm411.comElectronic abstract submission is strongly preferred.Abstracts should be attached preferablyas Microsoft Word files or as PDF files,and e-mailed to Rnadell@pcm411.com.6. Foreign authors requiring a visa to visit the U.S.are encouraged to submit their abstracts as early aspossible. Special consideration will be made toensure that an early application for a visa can bemade.7. Authors of accepted papers will be notified byJuly 31, 2008. Authors of accepted papers arerequested to submit a revised abstract not toexceed four pages for inclusion in the Book ofExtended Abstracts by September 5, 2008.8. Full-length papers for publication in the JEMmust be submitted electronically by using the linkon the Workshop’s Web page at http://www.ii-iworkshop.org. The authors can start submittingmanuscripts from November 3–22, 2008.

WORKSHOP CALENDARDeadline for Submission of Abstracts. . . . . . . . . . . . . . . . . . . . . . . . . . .June 30, 2008Notification of Accepts/Rejects. . . . . . . . . . . . . . . . . . . . . . . . . . .July 31, 2008Deadline for Late-News Abstracts. . . . . . . . . . . . . . . . . . . . . . .September 5, 2008Deadline for Extended Abstracts. . . . . . . . . . . . . . . . . . . . . . .September 5, 2008Hotel Reservation Deadline. . . . . . . . . . . . . . . . . . . . . . . .October 17, 2008Registration Deadline. . . . . . . . . . . . . . . . . . . . . . . .October 27, 2008Electronic Paper Submission for Publication. . . . . . . . . . . . . . . . . . . . . . .November 3, 20082008 II-VI Workshop. . . . . . . . . . . . . . . . . . .November 11–13, 2008

WORKSHOP ORGANIZATIONCO-CHAIRSI. B. Bhat, Rensselaer Polytechnic InstituteT. N. Casselman, ConsultantH. F. Schaake, DRS Infrared TechnologiesPROGRAM COMMITTEEP. M. Amirtharaj, U.S. Army Research LaboratoryJ. M. Arias, Teledyne Imaging SensorsL. E. Brown, Air Force Research LaboratoryA. Burger, Fisk UniversityW. Clark, Army Research OfficeR. E. DeWames, RAND Corp.N. K. Dhar, DARPA/MTOJ. P. Faurie, EPIR Technologies, Inc.C. A. Hoffman, Naval Research LaboratoryR. B. James, Brookhaven National LaboratoryS. M. Johnson, Raytheon Vision SystemsM. Martinka, RDECOM CERDEC (NVESD)T. H. Myers, West Virginia UniversityJ. G. Pellegrino, RDECOM CERDEC (NVESD)H. K. Pollehn, U.S. Army Research LaboratoryM. B. Reine, BAE SystemsH. G. Robinson, SRI InternationalS. Sivananthan, University of Illinois at ChicagoC. Szeles, eV ProductsH. R. Vydyanath, Avyd DevicesWORKSHOP COORDINATORR. Nadell, Palisades Convention Management411 Lafayette Street, Suite 201,New York, NY 10003212/460-8090, ext. 203fax: 212/460-5460e-mail: Rnadell@pcm411.comWORKSHOP WEBSITE(http://www.ii-viworkshop.org)The Workshop Internet Web page has thelatest information on the Workshop and is updatedas information becomes available.

WORKSHOP PARTICULARSLocation and DateThe 2008 II-VI Workshop will be heldNovember 11-13, 2008 at The Riviera Hotel,Las Vegas, NevadaRegistrationThe Workshop Registration Card, availableon-line in June 2008, should be completed andmailed/faxed to:Palisades Convention ManagementThe 2008 II-VI WorkshopAttn: Ralph Nadell411 Lafayette St., Suite 201New York, NY 10003Fax: 212/460-5460The deadline for Workshop registration isOctober 27, 2008. The registration fee for allattendees, except full-time university students,will be $695. The special student fee will be willbe $150. The fees include lunches, refreshments,a copy of the Book of Extended Abstracts,and a soft-bound copy of the Workshop proceedings.A hard-bound copy of the Workshop proceedingscan be purchased for an additional $20.Please make all checks, drawn from a U.S. bankin U.S. dollars, payable to The II-VI Workshop.Hotel AccommodationsA block of rooms has been reserved at TheRiviera Hotel, Las Vegas, Nevada, at specialWorkshop rates. A limited number of rooms willbe available to Government employees and universitystaff/students with proper identification. Ifcalling for reservations, the hotel must beadvised that you are a II-VI Workshop attendeeto obtain these special rates. On-line hotel reservationswill be available through the WorkshopWeb site in early June. Reservations receivedafter the cut-off date of October 17, 2008 will besubject to availability.Student Financial AssistanceTo help defray the cost of attending theWorkshop, the registration fee for students willbe $ 150. In addition, full-time university studentspresenting papers will receive up to $650 in support.This support must be requested in advanceof the Workshop.

THE II-VI WORKSHOP411 LAFAYETTE ST., SUITE 201NEW YORK, NY 10003THE 2008 II-VI WORKSHOP CALL FOR PAPERS