American Association for Crystal Growth

despite the large amount of chemical synthetic work
into new sources. Research at all levels has generally
moved from the basic underlying science of MOVPE
to an emphasis on device applications as the technology
has matured. Materials, such as the group III-nitrides
and narrow gap semiconductors, continue to be studied
and developed throughout the US and the world.
Chemically-based vapor phase epitaxy continued
to develop in the mainstream Si and SiGe technologies
as well. The formation of SiGe-based materials
and devices was pioneered through the work of B. S.
Meyerson (AACG Young Authors Awardee, 1987) at
IBM using ultrahigh vacuum chemical vapor deposition
or UHV-CVD. 34 The ultrahigh vacuum environment
was critical to this technology and its application
was motivated by an understanding of the chemical
kinetics of SiO 2 formation and decomposition developed
at the City College of New York. 35 The role of
surface-absorbed hydrogen in controlling the growth
rate and stabilizing Si-SiGe heterojunction interfaces
during growth became central to the formation of many
of these materials and devices. Hydrogen was strongly
absorbed on the Si or SiGe surface and altered the surface
transport and surface chemical reactions within the
growth environment. The SiGe material system and its
associated technology is now part of our mainstream
high-performance electronics present in almost every
computer.
Nanostructures and nanopatterning have entered
the realm of crystal growth. Formation of many
nanostructures such as nanowires, and other morphologically
interesting shapes such as tetrapods, nanocombs,
and dendritic nanostructures, have all been
formed by largely chemical processes. Most of these
structures rely on the use of low temperatures where
the crystal growth process is controlled by some aspect
of surface transport or surface chemical kinetics and
the differing growth rate behavior on specific facets of
the growing crystallite. While many materials such as
the oxides use hydrothermal processing, semiconductor
nanowires have been largely formed using vapor phase
processing. The vapor-liquid-solid (VLS) or vaporsolid-solid
(VSS) growth modes of nanowires, while
known from the early work of Wagner and co-workers
at Bell labs, 36 was extended in many ways. The specific
mechanisms of growth are still being investigated
with the relative contributions of thermodynamics, surface
transport and chemical kinetics being discussed
Figure 9: The schematic process used by Lew and Redwing to
produce large numbers of Si nanowires through the vapor-liquidsolid
(VLS) process (Reprinted from ref. 43, Copyright 2003,
with permission from Elsevier). They used a nanoporous anodized
aluminum oxide template, which forms ordered arrays of straight
nanoscopic pores through the aluminum oxide layer, guiding the
VLS growth.
in the literature. In general, these processes rely on the
catalytic decomposition of the gas phase source on the
surface of the metallic drop to define the nanowire diameter
and growth rate. The self-assembly of substrate
materials into organized nanostructures has also been
used as templates for nanowire growth. Anodized aluminum
oxide (AAO) was used by J. Redwing (AACG
Young Authors Awardee, 2000) to simultaneously form
a large number of silicon nanowires by growing within
the hexagonal array of pores formed in the AAO, schematically
shown in Figure 9. 37 These silicon-based
nanowires potentially enable new devices such as axial
pn junctions and transistors. The growth of nanostructured
materials has expanded to encompass many industrial
and university laboratories within the US and
around the world. Nanostructure growth has provided
interesting platforms for the study of the fundamental
atomic scale processes important for crystal growth and
could enable new technologies.
The observation has been often made that modern
science and engineering is witnessing a merging of
the scientific disciplines, forming ‘fuzzy’ boundaries
between chemistry, physics, and the engineering disciplines.
The evolution of crystal growth science and
technology over the last 50 years has shown that our
field has long been at the forefront of this interdisciplinary
trend. Our field now spans the physical length
scales from nanometers to meters, manipulating the
surface chemistry, physical environment and the flows
of heat and mass with new dimensions of understanding
and prediction that spans similar length scales. The
field of crystal growth continues to be at the heart of
most of our advanced technologies and will continue to
expand into the fields of biology and medicine. I hope
that the progress and trends we have witnessed over the
last half century will continue to keep crystal growth
alive and well at the forefront (and center) of new materials
and technologies.
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