Editors Advisors - NIST

01.04.2010, 1150-53, Elsevier, North Holland Publication.2. M. M. Khandpekar and S. P. Pati, “Growth and Characterization of New Non-Linear OpticalMaterial á-Glycine Sulpho-Nitrate (GLSN) with Stable Dielectric and Light DependentProperties”, Journal of Optics Communication, online: 20.03.2010, Vol. 283, pp 2700-04, 2010,Elsevier, North Holland Publication3. Shankar P. Pati, Pravash R. Tripathy and Santosh K. Dash, “Avalanche Breakdown Characteristicsof Wide Band Gap vis-à-vis Low Band Gap Junctions and High RF Power/Low NoiseGeneration in ZnS DD IMPATTs”, Accepted for International Journal of Pure and Applied Physics,2010.4. Moumita Mukherjee, Pravash Tripathy, S. P. Pati, “Effects of Mobile Space-Charge on DynamicCharacteristics and Parasitic Resistance of InP Terahertz IMPATT Oscillator Operating atElevated Junction Temperature”, Archives of Applied Science Research(USA) (Release in June2010) Manuscript No: SRL-AASR-2010-988 Date: 21/05/2010.5. S. K. Dash , P. R. Tripathy, MIEEE, P. K. Mishra and S. P. Pati, FIETE, ”Effect of DiffusionImpurity Profile across Junction Interface, on MM-Wave Properties of Si Complementary SDDiodes”, Orissa Journal of Physics, pp 233-44, No. 1, Vol. 1, 2010.6. P. R. Tripathy, R. K. Mishra and S. P. Pati, “MM-Wave Characteristics of SiC-Based IMPATTOscillators”, IEEE Applied Electromagnetics Conference Proc. (AEMC-2009) : IEEE Explore7. P. R. Tripathy, A. K. Panda and S. P. Pati, “Prospects of Wide Band Gap Material ZB-GaN overLow Band Gap GaAs-based IMPATT Devices”, International Conference on Computers andDevices for Communication Proc. (CODEC-2009).8. P. R. Tripathy, A. K. Panda and S. P. Pati, “Comparison between the DC and MicrowavePerformance of Wurtzite Phase and Zinc-blende Phase GaN-based Impatts”, Proc. IWPSD-2009. pp 525-528, 2009.: IEEE Explore9. S. P. Pati and P. R. Tripathy, “Microwave Performance of Si DDRs in Fundamental/Harmonic/Enhanced Current Modes at 35GHz”, Proc. IWPSD-2009, pp 447-450, 2009.: IEEE Explore10. P. R. Tripathy and S. P. Pati, “Microwave Behavior of Opto-sensitive Si 1-xGe xalloy over Si andGe –Based IMPATT Diode”, Proc. ISMOT-2009, pp. 1073-1076, 2009. IEEE Explore11. M. M. Khandpekar and S P Pati ,“Nonlinear Optical and dislocation Studies in new GCFCrystals”, Proc., Int. Confecerence on Optical Engg., Wisconsin, Aug 09.12. M. M. Khandpekar, S. S. Dongare, S. B. Patil and S. P. Pati, “Effect of natural barley extract ondissolution of Urinary Calculi and detection of dislocations”, International Conference onDisolution of Unitary crystals, June 10, USA[ Published Conference / Symposium Articles at National Level... will continue in the next issue ]Orissa Physical Society Meeting @ NISTThe Orissa Physical Society conducted its first ever executive members meeting outside Bhubaneswar, since itsinception in 1971, at NIST on 1 August 2010. Twenty executive bodymembers and around 40 Physics Professors from in and around Berhampurattended the meeting. Prof. S. P. Pati, Emeritus Professor, NIST, President,Orissa Physical Society (OPS), chaired the meeting. A conceptual talk on‘How to teach Quantum Mechanics’ by Prof. Niranjan Barik enlightenedthe physicists present on the occasion. The whole program was successfullycoordinated and conducted by Prof. S. P. Pati, Dr. Sukanta Ku. Tripathyand Mr. Mihir Hota, Faculty members, Dept. of Physics, NIST.National Institute of Science & Technology, Berhampur, 761008 3 of 18