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ch 41.2.2-kadosh - Chemistry

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Au: Wang<br />

is not in ref<br />

87?<br />

4<br />

functional theory (DFT) with the VASP code. 83–85 The<br />

periodic boundary conditions and plane wave basis sets<br />

of the VASP code are especially effective for extended<br />

periodic systems su<strong>ch</strong> as semiconductors. The core<br />

electrons are simulated using the Vanderbilt pseudopotentials,<br />

86 and only the valence electrons are treated<br />

explicitly. The generalized gradient functional due to<br />

Perdew and Wang 87 is used. The energy cutoff for the<br />

plane wave basis was 202.7 eV, yielding a basis set of<br />

approximately 112,000 plane waves. The Kohn–Sham<br />

orbitals are constructed from the plane wave basis set<br />

and are used to describe the electronic states of the<br />

system.<br />

The assembled structure of the dye on the TiO 2 surface<br />

is brought to equilibrium at the temperature of<br />

350 K. A 1 fs MD timestep is used. Upon equilibration,<br />

a 1-ps adiabatic ground state MD trajectory is run in the<br />

microcanonical ensemble. This is the production run for<br />

NA MD.<br />

Under the assumption that the ET dynamics are<br />

dominated by thermal fluctuations of ions, su<strong>ch</strong> that ion<br />

dynamics are similar in the ground and excited electronic<br />

states, only the ground state trajectory data are<br />

needed to perform NA MD. For ea<strong>ch</strong> of the 1000 steps<br />

of the 1-ps production run, adiabatic energies and NA<br />

couplings are determined. In the one-electron picture,<br />

the adiabatic energies ε i are given by the energies of the<br />

Kohn–Sham orbitals. The NA couplings d ij are calculated<br />

numerically 66 based on the overlap of the Kohn–<br />

Sham orbitals φ i at sequential timesteps<br />

Israel Journal of <strong>Chemistry</strong> 42 2002<br />

(2)<br />

The adiabatic energies and NA couplings define the<br />

diagonal and off-diagonal elements of the electronic NA<br />

Hamiltonian, correspondingly<br />

(3)<br />

The NA Hamiltonian is time-dependent through the<br />

time-dependence of the locations of ions R.<br />

100 configurations are harvested from the first 900 fs<br />

of the 1-ps production run to use as initial configurations<br />

of the system at the time the photon is absorbed. For<br />

ea<strong>ch</strong> configuration, the Kohn–Sham orbital corresponding<br />

to the <strong>ch</strong>romophore first excited state is determined.<br />

An electron is promoted from an occupied orbital to the<br />

excited state orbital to initiate a NA MD run. The NA<br />

dynamics are carried out in the one-electron approximation<br />

(4)<br />

by propagating the occupations c i of 26 excited states<br />

using the NA Hamiltonian specified above. The state<br />

occupations are propagated by the second-order<br />

differencing s<strong>ch</strong>eme 88<br />

(5)<br />

with a timestep of 10 –3 fs.<br />

The extent of ET is determined by the fraction of the<br />

excited state electron that has left the dye. The density<br />

generated by the one-electron excited state wave function<br />

Ψ is integrated over the region of space occupied by<br />

the dye<br />

(6)<br />

and followed as a function of time. In order to establish<br />

the ET me<strong>ch</strong>anism, the evolution of the electron density<br />

is decomposed into nonadiabatic and adiabatic contributions.<br />

(7)<br />

The first term is the NA ET, whi<strong>ch</strong> arises from<br />

<strong>ch</strong>anges in the excited electron’s occupation of the adiabatic<br />

states. The second term is due to <strong>ch</strong>anges in orbital<br />

localizations and gives adiabatic transfer 34 (Fig. 1).<br />

3. RESULTS<br />

The evolution of the excited state energies of the combined<br />

dye–semiconductor system during the 1-ps production<br />

run is plotted in Fig. 3a. The majority of the<br />

states are bulk and surface states representing the conduction<br />

band of the semiconductor. Only one excited<br />

state of the dye, indicated by the bold line, falls within<br />

the energy range shown in Fig. 3a. This state is occupied<br />

at the beginning of a NA run. As can be clearly seen in<br />

the figure, the energy of the dye state oscillates as a<br />

function of time. The amplitude of the oscillation is<br />

several tenths of an electronvolt. The oscillation is relatively<br />

small compared to the several-electronvolt excita-

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