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IRLZ24N - Micropik

IRLZ24N - Micropik

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<strong>IRLZ24N</strong>LV DSD.U.T.R G +V- DD5.0 VI ASt p 0.01ΩFig 12a. Unclamped Inductive Test CircuitV (BR)DSSt pEAS, Single Pulse Avalanche Energy (mJ)14012010080604020I DTOP 4.5A7.8ABOTTOM 11AV DD = 25V0A25 50 75 100 125 150 175Starting T J , Junction Temperature (°C)V DSV DDFig 12c. Maximum Avalanche EnergyVs. Drain CurrentI ASFig 12b. Unclamped Inductive WaveformsCurrent RegulatorSame Type as D.U.T.50KΩQ G12V.2µF.3µF5.0 VQ GSQ GDD.U.T.+V- DSV GSV G3mAChargeI G I DCurrent Sampling ResistorsFig 13a. Basic Gate Charge WaveformFig 13b. Gate Charge Test Circuit


<strong>IRLZ24N</strong>Peak Diode Recovery dv/dt Test CircuitD.U.T+ƒ-Circuit Layout Considerations• Low Stray Inductance• Ground Plane• Low Leakage InductanceCurrent Transformer+‚--„+R G• dv/dt controlled by R G• Driver same type as D.U.T.• I SD controlled by Duty Factor "D"• D.U.T. - Device Under Test+-V DDDriver Gate DrivePeriodP.W.D =P.W.PeriodV GS =10V*D.U.T. I SD WaveformReverseRecoveryCurrentBody Diode ForwardCurrentdi/dtD.U.T. V DS WaveformDiode Recoverydv/dtV DDRe-AppliedVoltageInductor CurentBody DiodeForward DropRipple ≤ 5%I SD* V GS = 5V for Logic Level DevicesFig 14. For N-Channel HEXFETS


<strong>IRLZ24N</strong>Package OutlineTO-220AB OutlineDimensions are shown in millimeters (inches)2.87 (.113)2.62 (.103)1 0.5 4 (.41 5)1 0.2 9 (.40 5)3.78 (.14 9)3.54 (.13 9)- A -4.69 (.185)4.20 (.165)- B -1.32 (.052)1.22 (.048)15.24 (.600)14.84 (.584)46.4 7 (.25 5)6.1 0 (.24 0)1 2 31.15 (.0 4 5)M INLEAD ASSIGNMENTS1 - G A TE2 - D R AIN3 - SOURCE4 - D R AIN14.09 (.555)13.47 (.530)4.0 6 (.16 0)3.5 5 (.14 0)1.40 (.055)3X1.15 (.045)2.54 (.100)2X3X0.93 (.037)0.69 (.027)0 .3 6 (.01 4) M B A M0.5 5 (.02 2)3X0.4 6 (.01 8)2.92 (.115)2.64 (.104)NOTES:1 D IM E N S IO N IN G & TO L ER AN C IN G P ER A N S I Y 14 .5 M , 1 98 2. 3 O U TL IN E C O N FO R M S TO JE D E C OU T LIN E TO -2 20 -A B .2 CONTR OLLING D IMENSION : INCH 4 HEATSIN K & LEAD M EASUREMENTS D O NOT INCLUDE BU RRS.Part Marking InformationTO-220ABEXAMPLE :THIS IS AN IRF1010WITH ASSEMBLYLOT CODE 9B1MINTERNATIONALRECTIFIERLOGOASSEMBLYLOT CODEIRF 101092469B 1MAPART NUMBERDATE CODE(YYW W)YY = YEARWW = WEEKWORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371http://www.irf.com/ Data and specifications subject to change without notice. 11/96

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