BF979 Silicon PNP Planar RF Transistor

BF979Vishay SemiconductorsElectrical DC CharacteristicsT amb = 25 C, unless otherwise specifiedParameter Test Conditions Symbol Min Typ Max UnitCollector cut-off current –V CE = 20 V, V BE = 0 –I CES 100 ACollector-base cut-off current –V CB = 15 V, I E = 0 –I CBO 100 nAEmitter-base cut-off current –V EB = 3 V, I C = 0 –I EBO 10 ACollector-emitter breakdown voltage –I C = 1 mA, I B = 0 –V (BR)CEO 20 VDC forward current transfer ratio –V CE = 10 V, –I C = 10 mA h FE 20 50 90Electrical AC CharacteristicsT amb = 25 C, unless otherwise specifiedParameter Test Conditions SymbolMin Typ Max UnitTransition frequency –V CE = 10 V, –I C = 10 mA, f = 300 MHz f T 1750 MHzTransition frequency –V CE = 10 V, –I C = 30 mA, f = 300 MHz f T 1300 MHzCollector-base capacitance –V CB = 10 V, f = 1 MHz C cb 0.6 pFNoise figure –V CE = 10 V, –I C = 10 mA, Z S = 50 , F 3.4 4.2 dBf = 800 MHzPower gain–V CE = 10 V, –I C = 10 mA, Z S = 50 , Z L G pb 16 dB= 500 f = 800 MHzCollector current for G pbmax –V CE = 10 V, Z L = 500 f = 800 MHz –I C 10 mATypical Characteristics (T amb = 25 C unless otherwise specified)P tot – Total Power Dissipation ( mW )128454003503002502001501005000 20 40 60 80 100 120 140 160T amb – Ambient Temperature ( °C )Figure 1. Total Power Dissipation vs.Ambient Temperaturef – Transition Frequency ( MHz )T128482100180015001200900600300–V CB =10Vf=300MHz00 5 10 15 20 25 30 35–I C – Collector Current ( mA )Figure 2. Transition Frequency vs. Collector Currentwww.vishay.com2 (4)Document Number 85006Rev. 3, 20-Jan-99