technical program wednesday 26 september 2012 - IEEE Photonics ...

TuI2 11:00 AM - 11:15 AM
Chip-scale Optical Interconnects Based
on Hybrid Integrated Multiple Quantum
Well Devices, T. Gu, R. Nair and M. W. Haney,
University of Delaware, Newark, DE, USA
Hybrid integrated chip-scale optical interconnects
based on small-footprint coupling to
surface-normal MQW devices are advanced.
Refinements to the grayscale lithographic fabrication
process provide a path to ultra-high-density
seamless interfacing between the on- and offchip
domains.
TuI3 11:15 AM - 11:30 AM
49 Gbit/s Optical Transmission through
Long-Range Surface Plasmon Polariton
Waveguide, B. Banan, M. S. Hai, McGill
University, Montreal, QC, Canada, E. Lisicka,
P. Berini, University of Ottawa, Ottawa, ON,
Canada and O. Liboiron-Ladouceur, McGill
University, Montreal, QC, Canada
We experimentally characterize a plasmonic
waveguide and demonstrate its capability of
transmitting an optical signal at 49 Gbit/s. The
3.6 mm long gold strip embedded in Cytop
polymer exhibits 13.2 dB optical insertion loss.
TuI4 11:30 AM - 11:45 AM
Reduced Surface Roughness with
Improved Imprinting Technique for
Polymer Optical Components, X. Lin,
University of Texas at Austin, Austin, TX, USA,
A. Hosseini, Omega Optics Inc., Austin, TX, USA,
A. Wang, Oregon State University, Corvallis, OR,
USA and R. T. Chen, University of Texas at
Austin, Austin, TX, USA
We demonstrate a molding process to imprint
optical components on polymer. The hard mold
is fabricated by either evaporation or electroplating.
The roughness of molded polymer
surface is reduced compared to those fabricated
by ion-etching.
TuI5 11:45 AM - 12:00 PM
Short SiGe HBT Electro-Absorption
Modulator, P. Wu, S. Deng and R. Huang,
Rensselaer Polytechnic Institute, Troy, NY, USA
A SiGe HBT electro-absorption modulator with a
device length of 69 \u956µm is proposed.
Calculations show that the modulator works at a
speed of 25 GHz and can achieve a 10 dB extinction
ratio.
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TECHNICAL PROGRAM TUESDAY 25 SEPTEMBER 2012
HARBOUR ROOM B GRAND BALLROOM B GRAND BALLROOM C GRAND BALLROOM E
TuJ3 11:00 AM - 11:15 AM
Generation and Potential Applications of
White-Light Propelling Beams, D. Cannan,
P. Zhang and Z. Chen, San Francisco State
University, San Francisco, CA, USA
We demonstrate experimentally the generation of
white-light propelling beams by employing the
Moiré technique without mechanical movement
or phase-sensitive interference. We discuss the
possibility of using such incoherent beams for
dynamic optical tweezing and micro-manipulation.
TuJ4 11:15 AM - 11:30 AM
Growth Pattern of Yeast Cells Studied
Under Optical Tweezers, S. Charrunchon,
J. Limtrakul and N. Chattham, Kasetsart
University, Bangkok, Thailand
The patterns of yeast growth were studied under
1064 nm optical tweezers generated by timeshared
multiple optical traps. Yeast growth was
found following the path of the laser line possibly
resulted from localized heating effect.
TuJ5 11:30 AM - 11:45 AM
Simulation and Experiment on
Manipulation of Micro Particles by using
a Flexural Acoustic Wave, E.-S. Kim,
J.-T. Kim, M.-H. Lee, S.-H. Kim and I.-K. Hwang,
Chonnam National University, Gwangju,
Chonnam, Korea
We demonstrate acoustic manipulation of micro
fluorescence particles in a micro-capillary tube.
The forces applied to particles under flexural
acoustic wave was analyzed for various conditions
using finite element method.
TuK2 11:00 AM - 11:15 AM
Femtometer-Resolution Wavelength
Interrogation Using an Optoelectronic
Oscillator, M. Li, Institut National de la
Recherche Scientifique, Varennes, QC, Canada,
W. Li, J. Yao, University of Ottawa, Ottawa, ON,
Canada and J. Azaña, Institut National de la
Recherche Scientifique, Varennes, QC, Canada
A novel technique to achieve femtometer-resolution
wavelength interrogation of a phase-shifted
fiber Bragg grating sensor is proposed and
demonstrated using an optoelectronic oscillator.
Wavelength interrogation with a realizable resolution
of 360fm is demonstrated.
TuK3 11:15 AM - 11:30 AM
Sensitivity and Dynamic Range of a
Wideband RF Analyzer Based on
Parametric Multicasting, S. Zlatanovic,
C. K. Huynh, J. M. Kvavle, J. R. Adleman,
B. Williams, Space and Naval Warfare Systems
Center - Pacific, San Diego, USA, A. O. Wiberg,
Z. Tong, B. P. P. Kuo, E. Myslivets, S. Radic,
University of California - San Diego, La Jolla,
CA, USA and E. W. Jacobs, SPAWAR Systems
Center - Pacific, San Diego, CA, USA
Sensitivity and dynamic range data is presented
for a wideband staring RF spectrum analyzer
based on parametric multicasting and spectral
slicing with a periodic optical filter.
TuK4 11:30 AM - 11:45 AM
Fast Arbitrary Waveform Generation by
Using Digital Micro-Mirror Arrays,
S. K. Kalyoncu, Q. Song, Y. Huang and
O. Boyraz, University of California - Irvine, Irvine,
CA, USA
We demonstrate fast optical arbitrary waveform
generation by using MEMS digital micro-mirror
arrays. Experimentally, we obtain ~120MHz
waveforms that can be controlled by using
1024x768 mirror arrays. 1GHz waveforms reconfigurable
in 1µs are also achievable.
TuL2 11:00 AM - 11:15 AM
High-Power High-Bandwidth Flip-Chip
Bonded Modified Uni-traveling Carrier
Photodiodes, Q. Zhou, University of Virginia,
Charlottesville, VA, USA
Modified uni-traveling carrier (MUTC) photodiodes
with diameter of 28 µm and 20 µm flip-chip
bonded on AlN substrate demonstrated RF
output power of 25 dBm and 19 dBm at 25 GHz
and 30 GHz, respectively.
TuL3 11:15 AM - 11:30 AM
A High Linear and High Power
Photoreceiver Suitable for Analog
Applications, S. Fedderwitz, C. C. Leonhardt,
J. Honecker, P. Müller and A. Steffan, u2t
photonics AG, Berlin, Germany
We present a photoreceiver optimized for use in
analog applications requiring highly linear operation
and high rf-output power. The analog
photoreceiver exhibits an rf-output power
exceeding +20 dBm at a central frequency of 54
GHz.
TuL4 11:30 AM - 11:45 AM
Mushroom-Mesa GaAs/In0.5Ga0.5P Based
Laser Power Converter for Simultaneous
10 Gbit/sec Data Detection and DC
Electrical Power Generation,
J.-W. Shi, J.-M. Wun, C.-Y. Tsai, National Central
University, Taoyuan, Taiwan, R.O.C., and
J. E. Bower, University of California – Santa
Barbara, Santa Barbara, CA, USA
We demonstrate a novel high-speed
GaAs/In0.5Ga0.5P based laser power converter with
under-cut mesa to minimize junction capacitance.
Under near turn-on voltage (+0.8 V),
high-speed (10Gbit/sec) data detection with
~20% power generation efficiency can be
achieved.
TuL5 11:45 AM - 12:00 PM
High-Speed High-Responsivity Low
Temperature Grown GaAs Detector,
M. Currie, US Naval Research Laboratory,
Washington, DC, USA, P. Dianat, Drexel
University, Philadelphia, PA, USA, A. Persano,
A. Cola, C. Martucci, F. Quaranta, Institute for
Microelectronics and Microsystems, Lecce, Italy
and B. Nabet, Drexel University, Philadelphia, PA,
USA
Low temperature grown GaAs (LT-GaAs) used in
THz detection suffers from low responsivity. An
LT-GaAs device with high response speed as well
as high responsivity that is comparable to regular
temperature GaAs is presented.