Dealing with IGBT Modules

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Gate clamping with “Zener Diode” or “Avalanche Diode”from gate to emitter potential On driver board (distance to module ≤ 5 cm, twisted pair wires) Or on auxiliary PCB Parallel “R GE “ is recommendedV GEGate Clamping34
Auxiliary PCB directly at the IGBT module The additional R GE ensures off-state of IGBT in case of failed wiringZ-diodeR GEZ-diodeR GER GoffR GonR GoffR GonGate Clamping35
Page 1 and 2: Dealing with IGBT Modules1
Page 3 and 4: Dealing with IGBT Modules Motivatio
Page 5 and 6: Increased switching speed, decrease
Page 9 and 10: The comparison of stray inductances
Page 11 and 12: The mechanical design has a signifi
Page 13 and 14: Simulation of current distributionf
Page 15 and 16: For paralleling standard modules a
Page 17 and 18: Paralleled half bridge IGBT modules
Page 19 and 20: Comparison of different designs Two
Page 23 and 24: Different snubber networks are in u
Page 25 and 26: But still: the snubber networks nee
Page 27 and 28: These capacitors did not work satis
Page 29 and 30: After introduction of optimised snu
Page 31 and 32: Over voltages at the gate V GE > +/
Page 33: Gate clamping with “Schottky Diod
Page 37 and 38: Taking thermal management into rega
Page 41 and 42: Hard connected Gates All IGBTs have
Page 43 and 44: Separated by gate resistors All IGB
Page 45 and 46: The introduction of R Ex (≈ 10 %
Page 47 and 48: The introduction of R Ex leads also
Page 49 and 50: The introduction of clamping diodes
Page 51 and 52: PCB for paralleling IGBT close to t
Page 53 and 54: Auxiliary PCB directly at the IGBT
Page 55 and 56: Why symmetrical AC terminal connect
Page 57 and 58: AC link design Short connections wi
Page 59 and 60: Optimisation problem In order to op
Page 61 and 62: How to use single switch IGBT modul
Page 63 and 64: Comparison For GB modules the diode
Page 65 and 66: Advantages of paralleled half bridg
Page 69 and 70: Dealing with IGBT Modules For paral
Page 71 and 72: Document status:preliminaryDate of

Dealing with IGBT Modules

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