13.07.2015 Views

Radiation-Hardened (RH) Products for Powering FPGAs

Radiation-Hardened (RH) Products for Powering FPGAs

Radiation-Hardened (RH) Products for Powering FPGAs

SHOW MORE
SHOW LESS

You also want an ePaper? Increase the reach of your titles

YUMPU automatically turns print PDFs into web optimized ePapers that Google loves.

Linear Technology Space Qualified<strong>Products</strong> Website


Linear Technology Space Qualified<strong>Products</strong> Website


4K Topside Glassivation


Ø LTC planning to release Class V SMDs by Q1CY12Ø LTC Technology/Quality Con<strong>for</strong>mance Inspections includes:q Group B subgroups 1- 4 plus 6 <strong>for</strong> each assembly lotq Group B/2 and B/3 <strong>for</strong> each inspection lotq Group B/5 <strong>for</strong> each wafer lot<strong>RH</strong>A Class V vs. LTC <strong>RH</strong> Flowq Subgroups are per MIL-STD-883 Test Method 5004 <strong>for</strong> Class S screening and TM5005<strong>for</strong> QCI/TCI/Qualification (Group B Class S).Ø LTC does not use Si3N4 [silicon nitride] top-side passivation on any <strong>RH</strong>offerings to date. Such passivation encourages radiation-induced trappedcharges which reduces hardness.Ø LTC uses a low temperature chemical deposited oxide, otherwise knownas ‘silox’ or ‘silicon dioxide’ as a non-scratch-proof top-side barrier.Ø 4,000 angstroms glassivation and no Silicon Nitride versus minimum6,000 angstroms and 2K Silicon Nitride as per MIL-PRF-38535 AppendixA and MIL-STD-883 TM5007 (Wafer Lot Acceptance)q LTC per<strong>for</strong>ms Glassivation as an integral part of its wafer fabrication process


nnnnnStandard Bipolar (BIPS700)uuFeatures 7-micron geometryNPN F T : 300MHz<strong>Radiation</strong>-<strong>Hardened</strong> ProcessesComplimentary Bipolar (Combi)uuFeatures 7-micron geometry<strong>RH</strong>1498/99Complimentary Bipolar (Combi)uuFeatures 2-micron geometry<strong>RH</strong>1814Stepper Bipolar (BIPU405)uuuFeatures 4-micron geometryNew Technology Insertion – <strong>RH</strong>6105MILDICE (In Development)<strong>RH</strong>3845MILDICE (In Development)High-Speed Bipolar (BIPH400)uuuFeatures 4-micron geometryR1959MILDICE (In Development – Vehicle to New Technology Insertion)NPN F T : 2GHzn High-Per<strong>for</strong>mance Bipolar (BIPC150)uuuuFeatures 1.5-micron geometry, PMOS structures, and SiCr thinfilm resistors<strong>RH</strong>3080MKDICE (Vehicle to New Technology Insertion & Hillview CA Fab Qual)R3480MILDICE (In Development)NPN F T : 700MHz


Space Partnership ProgramPower <strong>Products</strong> with “<strong>RH</strong> DICE Inside”


Voltage Regulator AnalysisnnWorst Case Analysisu Stabilityu Step Loadu Current Limitu Short Circuitu Startup/Brownoutu Conducted Susceptibility/Ripple Rejectionu Headroomu Voltage RegulationStress & De-Rating Analysisu Nominalu Worst Caseu Transientu TOR, EEE-Inst-002 Compliant


Power Supply AnalysisnWorst Case Analysisu Stabilityu Conducted Susceptibilityu Input Conducted Emissionsu Output Rippleu Switching Frequencyu Efficiencyu Voltage Regulationu Output Over Voltage Failure / Protectionu Transient Load Step Responseu Gate Drive Analysisu Magnetics Characteristicsu Filter Analysis – Damping, Impedance, Q, and Stabilityu Primary Over-current Trip ThresholduuuuShort- CircuitIsolation Resistance and CapacitanceInrush & OutrushTurn on Overshoot/Turn off


Power Supply AnalysisnStress & De-Rating Analysisu Nominalu Worst Caseu Transient


Power <strong>Products</strong>New Releases


<strong>RH</strong>3080MKDICE


<strong>RH</strong>1573KDICE


Power <strong>Products</strong>In Development


<strong>RH</strong>1959 - Step-Down Switching Regulator


Pulsed-Laser Test of MSK5058<strong>RH</strong> (<strong>RH</strong>3480MILDICE)Dakai Chen & Ted Wilcox, GSFC, Aug’11


SEE Test of LT3480


Pulsed-Laser Test of MSK5059<strong>RH</strong> (<strong>RH</strong>1959MILDICE)Dakai Chen & Ted Wilcox, GSFC, Aug’11


!"#$%&'()*+,)-.$-*-/0++*%&12342542!26785.-*9):;"9.9*+"AJF&& !D& HB;F563 8 M 8N'$@*$?&'()*+"A;F48C N,! MFF 4&N'$@*$?&'()*+"ABFF48C N,! MLF 4&N'$@*$?&'()*+"A:FF48C N,! OBF O;F 4&N'$@*$?&'()*+"ALFF48C N,! OGF 4&60, MF -NB+U6'/)*2)R.S" L;L[LOE4 :R*@R)$"")V.?)T :4.(W14X"$'Y8/'?"Z*?%JP./='/?Z*?,-"/./+R.S" ?Z?, . BFF\BFF4 :$9+59)>:*K&>L/9=+B+*-.9/8)>=+M":A/*,-*+9/'-*0>=+I366'/Y.?"/).*(Z*+";


Enhanced Low Dose <strong>Radiation</strong> Sensitivity<strong>Products</strong> & Lots Characterized


• No ELDRS found per TM1019.7 para. 3.13.1.1 <strong>for</strong> the devices tested, applying the test method<strong>for</strong>mula to every parameter tested: [Cond D delta / Cond A delta] < 1.5


Questions & Answers SessionRafi AlbarianManager, Space & Harsh Environment <strong>Products</strong>

Hooray! Your file is uploaded and ready to be published.

Saved successfully!

Ooh no, something went wrong!