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HERE - American Association for Crystal Growth

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were continuing bonding problems between silicon and aluminumand the company withdrew its IPO.DB: How did you manage the transition from GGG to silicon?DW: TI had a policy of promoting transfers with a JobOpportunities Bulletin that came out every Monday. It wasnot necessary to leave TI in order to gain experience withother projects. After the market <strong>for</strong> bubble memory burst in1980 (due to the success of CMOS and the Winchester harddisk technology), I worked on VLSI silicon and grew thefirst 125 mm silicon crystals at TI in the research building. Ifound the IDEA program at TI very useful <strong>for</strong> starting newprojects and in 1983 I became a Senior Member of TechnicalStaff because of my successful IDEA project. Thatproject resulted in the deployment of my automatic crystalgrowth control system using video from the recently inventedcharge-coupled device (CCD) cameras that were muchmore linear and sensitive than vidicon tubes.DB: Did you also work on compound semiconductors?DW: In 1988 two people, a Senior Member of TechnicalStaff and a TI Fellow, left a big hole in the TI crystal growthef<strong>for</strong>t of mercury cadmium telluride (MCT) by resigning inthe same month. I was requisitioned to manage the DefenseAdvanced Research Project Agency (DARPA) project <strong>for</strong>the Traveling Heater Method (THM) growth of MCT <strong>for</strong>cooled focal plane arrays (Javelin Missile). Later it was decidedthat the 90 day long THM process was too expensiveand too difficult <strong>for</strong> development of a reproducible product,and all 25 stations were shut down. A decision was madeto use Liquid Phase Epitaxy (LPE) (a four hour process).After that, I worked on the horizontal Bridgman growth ofcadmium zinc telluride <strong>for</strong> substrates <strong>for</strong> LPE of MCT.DB: Did you work on other projects at TI?DW: In 1991, I transferred to the Uncooled Focal PlaneArray group to make four inch diameter fine-grained bariumstrontium titanate (BST) wafers. BST was a photocapacitor<strong>for</strong> 8-12 micron infrared imaging. We set the phase transitiontemperature to 25 °C and put the device on a thermoelectriccooler to hold it at 25 degrees regardless of the ambient.The dielectric constant of each ceramic pixel changedfrom 500 to 25000 with a two degree change in temperature.A scene viewed through long wavelength infrared optics wasmechanically chopped to produce a video signal. The camerahad fantastic imaging capability due to the uni<strong>for</strong>mityand fine-grained structure in the ceramic wafers. However,laser reticulation of the pixels was slow and not easily replacedby ion milling, so the development ef<strong>for</strong>t shifted toPLZT (lanthanum stabilized lead zirconium titanate) whichnever made it into production of focal plane arrays.DB: Did you work on developing crystal growth equipmentor processing equipment?DW: In 1976 when I first joined TI Jerry Al<strong>for</strong>d, <strong>for</strong>merlyof UCC and Allied, called me to see if I could help himfind an application <strong>for</strong> his Ford Aerospace laser inspectiontechnology developed <strong>for</strong> textiles. I put him in touch withJoe Ayres in Sherman, TX and the whole wafer inspectiontechnology was born.My last years at TI be<strong>for</strong>e retiring in 1998 were in the siliconmaterials department which merged with MEMC in1994, leading to the construction of a $450M 200mm siliconcrystal growth factory. I was the materials manager <strong>for</strong>the critical supplies used in silicon crystal growth. Polysilicon,quartz crucibles, graphite heaters, graphite fiber insulationand boron quality were my responsibility. Everypolished wafer was scanned <strong>for</strong> defects on the commerciallaser inspection stations that had resulted from my earlierresponse to Jerry Al<strong>for</strong>d. Correlation of the scanned defectswith critical material lots and parts used in the growthfurnaces identified problems and kept the yields high.DB: After retirement, did you continue working?DW: Yes, I became Director of Engineering at NorthropGrumman SYNOPTICS in 2000 after I retired from TI andI also started consulting as ANAXTAL. At SYNOPTICS,I emphasized process automation. Weight control systems<strong>for</strong> Czochralski growth were substantially improved usinga rotary contactor with a transduced digital signal instead ofthe low voltage analog signal of the load cell. Since SYN-OPTICS is the merged Litton Airtron and Allied Chemicalfacility that I did not move to in 1976, I felt as though I wasreturning from a 24 year sabbatical at TI.DB: How do you think the US crystal growth communitycan sustain itself, given the migration of crystal growthtechnology to lower-cost countries?DW: The US has outsourced and off-shored much of ourmaterials manufacturing in the last 20 years. There<strong>for</strong>e,our crystal growth technology has suffered tremendously.Only a few companies survive as “National Treasures” andeven some of them have gone offshore <strong>for</strong> their crystallineproduct manufacturing. We need to think smarter and useAACG Newsletter Summer 2013 13

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