CURRICULUM VITAE Ignacio Esquivias Moscardó

More documents

Recommendations

Info

"Laseres de Semiconductor Avanzados para Procesado de Señal Todo-Optico y Generacion de Pulsos Cortos (ALAS)" MICINN (Spain) Ref.: TEC2009-14581-C02-01. Coordinated project ( 2 partners). 1-01-2010: active Principal Investigator (UPM): I. Esquivias "Screening and pre-Evaluation of Shortwave Infrared Laser Diode for Space Application " European Space Agency (ESA-2008 ITT 5618), 3 partners 12/2008: 31.3.2011 Principal Investigator (UPM): I. Esquivias "Multi-Gigahertz Optical Modulator of Very Low Driving Power " European Space Agency (ESA-2005 ITT 4862), 3 partners 09/2006: active Principal Investigator (UPM): I. Esquivias "High Efficiency Optical Amplifier for On-Board Fiber Optic Subsystems Applications" European Space Agency (ESA-2005 ITT 4849), 3 partners 06/2006 : 03/2009 Principal Investigator (UPM): Francisco Jose López Hernández "WWW.BRIGHTER.EU World Wide Welfare: high BRIGHTness semiconductor lasERs for gEneric Use" European Commission, 6th Frameprogramm, IST, Integrated Project (22 partners). Ref. IST 035266 1-10-06: 30-9-09. Project Coordinator: M. Krakowski Principal Investigator (UPM): I. Esquivias "WWW.BRIGHT.EU World Wide Welfare: high BRIGHTness semiconductor lasERs for gEneric Use" European Commission, 6th Frameprogramm, IST, Integrated Project (22 partners). Ref. IST 511722 1-7-04:30-6-06 Project Coordinator: M. Krakowski Principal Investigator (UPM): I. Esquivias Desarrollo de Técnicas de Banda-Ultra-Ancha Mediante Pulsos Generados por Diodos Láser: Aplicaciones a las Comunicaciones Ópticas Inalámbricas (BLANCO) MEC Ref.: TEC2006-13887-C05-01/TCM. Coordinated project ( 5 partners). 1-10-2006:30-9-2009 Principal Investigator (UPM): Francisco Jose López Hernández Láseres y Amplificadores de Cavidad Vertical para Comunicaciones Ópticas y Procesado Óptico de Señal M.C.Y.T. Ref.: TIC2002-04255-C04-04, Coordinated project ( 4 partners). Principal Investigator (UPM) and Project coordinator: I. Esquivias 1-12-02: 30-11-05 "ULTRABRIGHT: Reliable Ultra-Bright Laser Sources for Terabit Telecommunications and Photodynamic Therapy Applications” European Commission, 5th Frameprogramm, IST, STREP (7 partners), Ref.: IST 1999-10356” ENTIDADES PARTICIPANTES THALES–CSF, Lab. Central de Recherches, Francia 1-2-2000: 31-1-2003 Project Coordinator: M. Krakowski Principal Investigator (UPM) I. Esquivias “DIODOS LASER CON SELECCION MODAL M.C.Y.T. Ref.: TIC99-0645-C05-04, Coordinated project ( 5 partners). Principal Investigator (UPM) and Project coordinator: I. Esquivias 31-12-99: 31-12-02 October 2012 page 2
Papers in JCR journals P. Adamiec, B. Bonilla, A. Consoli, J.M. Tijero, S. Aguilera, and I. Esquivias, "High peak power pulse generation from a monolithic Master Oscillator Power Amplifier at 1.5 µm" Applied Optics, in press, posted 07/09/2012; Doc. ID 170116. A. Consoli and I. Esquivias, "Pulse shortening of gain switched single mode semiconductor lasers using a variable delay interferometer", Opt. Express, 20(20), pp. 22481-22489 (2012) A. Consoli, B. Bonilla, J.M.G. Tijero and I. Esquivias, “Self-validating technique for the measurement of the linewidth enhancement factor in semiconductor lasers”. Opt. Express 20(5), pp. 4979–4987 (2012). Consoli, A., Tijero, J.M.G., Esquivias, I.; "Time resolved chirp measurements of gain switched semiconductor laser using a polarization based optical differentiator", Optics Express, 19 (11), pp. 10805-10812, (2011). Pagano, R., Ziegler, M., Tomm, J.W., Esquivias, I., Tijero, J.M.G., O'Callaghan, J.R., Michel, N., Krakowski, M., Corbett, B.; "Two-dimensional carrier density distribution inside a high power tapered laser diode", Appl. Phys. Lett., 98 (22), art. no. 221110, (2011). A. Consoli, I. Esquivias, F. J. López Hernández, J. Mulet and S. Balle; "Characterization of Gain-Switched Pulses from 1.55 µm VCSEL"; IEEE Photon Technol. Lett., vol. 22(11) pp. 772-774, 2010. H. Odriozola, J. M. G. Tijero, L. Borruel, I. Esquivias, H. Wenzel, F.Dittmar, K. Paschke, B. Sumpf, and G. Erbert, "Beam Properties of 980 nm Tapered Lasers with Separate Contacts: Experiments and Simulations", IEEE J. Quantum Electron., Vol. 45(1), pp. 42 - 50 (2009) E.-M. Pavelescu, C. Gilfert, J. P. Reithmaier, A. Martín-Mínguez, and I. Esquivias; "High-power tunnel-injection 1060-nm InGaAs/(Al)GaAs quantum-dot lasers", IEEE Photon Technol. Lett. , Volume 21(14), pp. 999 - 1001, 2009. J. Mulet, S. Balle, J. Arias, V. Martín-Hériz and I. Esquivias; "Current self-distribution effects in oxide-confined vertical-cavity surface-emitting lasers" Opt. Quantum Electron Volume: 40 Issue: 14-15 Pages: 1199-1204; DOI 10.1007/s11082-009-9284- 3 (2009) H. Odriozola, J. M.G. Tijero, I. Esquivias, L. Borruel, A. Martín-Mínguez, N. Michel, M. Calligaro, M. Lecomte, O. Parillaud, and M. Krakowski., "Design of 1060 nm Tapered Lasers with Separate Contacts",. Opt. Quantum Electron Volume: 40 Issue: 14-15 Pages: 1123-1127 DOI: 10.1007/s11082-009-9270-9 (2009) N. Michel, H. Odriozola, C.H. Kwok, M. Ruiz, M. Calligaro, M. Lecomte, O. Parillaud, M. Krakowski, M. Xia, R.V. Penty, I.H. White, J.M.G. Tijero and I. Esquivias, "High modulation efficiency and high power 1060 nm tapered lasers with separate contacts”. Electron. Lett., Vol 45, (2), pp. 103–104 (2009). H. Odriozola, J. M. G. Tijero, L. Borruel, I. Esquivias, H. Wenzel, F.Dittmar, K. Paschke, B. Sumpf, and G. Erbert, "Beam Properties of 980 nm Tapered Lasers with Separate Contacts: Experiments and Simulations", IEEE J. Quantum Electron., Vol. 45(1), pp. 42 - 50 (2009) L. Borruel, H. Odriozola, J. M. G. Tijero, I. Esquivias, S. Sujecki and E. C. Larkins, “Design strategies to increase the brightness of gain guided tapered lasers” Opt. Quantum Electron., Vol. 40, Issue 2-4 pp. 175-189 (2008) E.M. Pavelescu, C. Gilfert, J.P. Reithmaier, A. Martin-Minguez, I. Esquivias, "GaInAs/(Al)GaAs quantum-dot lasers with high wavelength stability", Semiconductor Science Technol. vol. 23(8) pp. 85022-85022 (2008) Tijero, J. M. G.; Odriozola, H.; Borruel, L.; Esquivias, I.; Sujecki, S.; Larkins, E. C.; “Enhanced Brightness of Tapered Laser Diodes Based on an Asymmetric Epitaxial Design” IEEE Photon Technol. Lett., vol. 19, no. 20, pp. 1640–1642, Oct. 15, 2007. W. Kaiser, J. P. Reithmaier, A. Forchel, H. Odriozola, I. Esquivias, “Theoretical and experimental investigations on temperature induced wavelength shift of tapered laser diodes based on InGaAs/GaAs quantum dots” Appl. Phys. Lett. 91, 051126 (2007). October 2012 page 3
Page 1: Profesional Address CURRICULUM VITA
Page 5 and 6: K. Czotscher, S. Weisser, E. C. Lar
Page 7 and 8: A.Consoli, J.M. G. Tijero, J. Azañ
Page 9 and 10: N. Michel, M. Krakowski, I. Hassiao

CURRICULUM VITAE Ignacio Esquivias Moscardó

You also want an ePaper? Increase the reach of your titles

Delete template?

Save as template?