CURRICULUM VITAE Ignacio Esquivias Moscardó

Papers in JCR journals
P. Adamiec, B. Bonilla, A. Consoli, J.M. Tijero, S. Aguilera, and I. Esquivias, "High peak power pulse generation from a
monolithic Master Oscillator Power Amplifier at 1.5 µm" Applied Optics, in press, posted 07/09/2012; Doc. ID 170116.
A. Consoli and I. Esquivias, "Pulse shortening of gain switched single mode semiconductor lasers using a variable delay
interferometer", Opt. Express, 20(20), pp. 22481-22489 (2012)
A. Consoli, B. Bonilla, J.M.G. Tijero and I. Esquivias, “Self-validating technique for the measurement of the linewidth
enhancement factor in semiconductor lasers”. Opt. Express 20(5), pp. 4979–4987 (2012).
Consoli, A., Tijero, J.M.G., Esquivias, I.; "Time resolved chirp measurements of gain switched semiconductor laser using a
polarization based optical differentiator", Optics Express, 19 (11), pp. 10805-10812, (2011).
Pagano, R., Ziegler, M., Tomm, J.W., Esquivias, I., Tijero, J.M.G., O'Callaghan, J.R., Michel, N., Krakowski, M., Corbett, B.;
"Two-dimensional carrier density distribution inside a high power tapered laser diode", Appl. Phys. Lett., 98 (22), art. no.
221110, (2011).
A. Consoli, I. Esquivias, F. J. López Hernández, J. Mulet and S. Balle; "Characterization of Gain-Switched Pulses from 1.55 µm
VCSEL"; IEEE Photon Technol. Lett., vol. 22(11) pp. 772-774, 2010.
H. Odriozola, J. M. G. Tijero, L. Borruel, I. Esquivias, H. Wenzel, F.Dittmar, K. Paschke, B. Sumpf, and G. Erbert, "Beam
Properties of 980 nm Tapered Lasers with Separate Contacts: Experiments and Simulations", IEEE J. Quantum Electron., Vol.
45(1), pp. 42 - 50 (2009)
E.-M. Pavelescu, C. Gilfert, J. P. Reithmaier, A. Martín-Mínguez, and I. Esquivias; "High-power tunnel-injection 1060-nm
InGaAs/(Al)GaAs quantum-dot lasers", IEEE Photon Technol. Lett. , Volume 21(14), pp. 999 - 1001, 2009.
J. Mulet, S. Balle, J. Arias, V. Martín-Hériz and I. Esquivias; "Current self-distribution effects in oxide-confined vertical-cavity
surface-emitting lasers" Opt. Quantum Electron Volume: 40 Issue: 14-15 Pages: 1199-1204; DOI 10.1007/s11082-009-9284-
3 (2009)
H. Odriozola, J. M.G. Tijero, I. Esquivias, L. Borruel, A. Martín-Mínguez, N. Michel, M. Calligaro, M. Lecomte, O. Parillaud, and
M. Krakowski., "Design of 1060 nm Tapered Lasers with Separate Contacts",. Opt. Quantum Electron Volume: 40 Issue: 14-15
Pages: 1123-1127 DOI: 10.1007/s11082-009-9270-9 (2009)
N. Michel, H. Odriozola, C.H. Kwok, M. Ruiz, M. Calligaro, M. Lecomte, O. Parillaud, M. Krakowski, M. Xia, R.V. Penty, I.H.
White, J.M.G. Tijero and I. Esquivias, "High modulation efficiency and high power 1060 nm tapered lasers with separate
contacts”. Electron. Lett., Vol 45, (2), pp. 103–104 (2009).
H. Odriozola, J. M. G. Tijero, L. Borruel, I. Esquivias, H. Wenzel, F.Dittmar, K. Paschke, B. Sumpf, and G. Erbert, "Beam
Properties of 980 nm Tapered Lasers with Separate Contacts: Experiments and Simulations", IEEE J. Quantum Electron., Vol.
45(1), pp. 42 - 50 (2009)
L. Borruel, H. Odriozola, J. M. G. Tijero, I. Esquivias, S. Sujecki and E. C. Larkins, “Design strategies to increase the brightness
of gain guided tapered lasers” Opt. Quantum Electron., Vol. 40, Issue 2-4 pp. 175-189 (2008)
E.M. Pavelescu, C. Gilfert, J.P. Reithmaier, A. Martin-Minguez, I. Esquivias, "GaInAs/(Al)GaAs quantum-dot lasers with high
wavelength stability", Semiconductor Science Technol. vol. 23(8) pp. 85022-85022 (2008)
Tijero, J. M. G.; Odriozola, H.; Borruel, L.; Esquivias, I.; Sujecki, S.; Larkins, E. C.; “Enhanced Brightness of Tapered Laser
Diodes Based on an Asymmetric Epitaxial Design” IEEE Photon Technol. Lett., vol. 19, no. 20, pp. 1640–1642, Oct. 15, 2007.
W. Kaiser, J. P. Reithmaier, A. Forchel, H. Odriozola, I. Esquivias, “Theoretical and experimental investigations on temperature
induced wavelength shift of tapered laser diodes based on InGaAs/GaAs quantum dots” Appl. Phys. Lett. 91, 051126 (2007).
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