GaN Industrial Devices Market : Quantitative Market analysis, Current and future trends to 2015 - 2021

GaN Industrial Devices Market : Quantitative Market analysis,
Current and future trends to 2015 - 2021
Gallium Nitride (GaN) has a wide band gap and owing to its advanced
features such as high breakdown voltage, high switching frequencies,
enhanced power efficiency, high conduction and thermal stability, GaN
is largely being preferred for numerous applications. These
characteristics have enabled GaN power semiconductors to penetrate
into various high power applications such as inverters for home
appliances, inverters for trains, broadband wireless networks systems,

power converter circuits, turbines, industrial and heavy electrical
systems, and electric and hybrid vehicles.
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GaN technology is set to replace the silicon technology because of its
superior characteristics and increasing applications as compared to
silicon. The properties of GaN allow its discretes such as FETs,
HEMTs, Schottky diodes and other advanced power devices to
operate at higher voltages efficiently. GaN industrial devices market is
expected to progress in the coming years, with the penetration in the
medium voltage power electronics market. The majority of the revenue
in GaN industrial devices market is coming from the ICT sector
because of increasing replacements of Si based devices with GaN. In
addition, various RF devices used for communication applications are
all being transformed to GaN based technology from Si technology.
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GaN industrial devices has several application segments, such as
industrial systems, power distribution systems, turbines, heavy
electrical systems, heavy machinery, electro-mechanical computing
systems and advanced industrial control systems. In addition, new
power applications (clean-tech) such as Smart Grid Power Systems,
High-Voltage Direct Current (HVDC), Wind Turbines, Solar Power
Systems and Wind Power Systems. GaN’s low sensitivity to ionizing
radiation and better stability allows its use in satellites, solar cell
arrays, and high end power equipments in military and aerospace
sector. GaN industrial devices also find application in automobile
sector; in the manufacturing of hybrid and electric vehicles.
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Major market participants profiled in this report include Fujitsu Limited
(Japan), GaN Systems Inc (Canada), Freescale Semiconductors
Incorporated (U.S.), International Rectifier Corporation (U.S.), and RF
Micro Devices Inc. (U.S.), Efficient Power Conversion Corporation

(U.S.), NXP Semiconductors N.V. (Netherlands), Renesas Electronics
Corporation (Japan), Toshiba Corporation (Japan), Texas Instruments
Inc. (U.S.), International Quantum Epitaxy (U.K.), Nichia Corporation
(Japan) and Cree Inc., (U.S.).
Table of Content
Chapter 1 Preface
Chapter 2 Executive Summary
CHAPTER 3 Global GaN Industrial Devices Market Overview
Chapter 4 Global GaN RF Market Analysis: High Electron Mobility
Transistor (HEMT)
Chapter 5 Global GaN HEMT Market Revenue: By Application, 2014 –
2021 (USD Mn)
Chapter 6 Maturity of GaN Technology

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