BT151--PHILIPS-

Philips Semiconductors
Thyristors
Product specification
BT151 series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivated thyristors in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT
envelope, intended for use in
applications requiring high BT151- 500R 650R 800R
bidirectional blocking voltage V DRM , Repetitive peak off-state 500 650 800 V
capability and high thermal cycling V RRM voltages
performance. Typical applications I T(AV) Average on-state current 7.5 7.5 7.5 A
include motor control, industrial and I T(RMS) RMS on-state current 12 12 12 A
domestic lighting, heating and static I TSM Non-repetitive peak on-state 100 100 100 A
switching.
current
PINNING - TO220AB PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 cathode
2 anode
tab
a
k
3 gate
tab
anode
123
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-500R -650R -800R
V DRM , V RRM Repetitive peak off-state
voltages
- 500 1 650 1 800 V
I T(AV) Average on-state current half sine wave; T mb ≤ 109 ˚C - 7.5 A
I T(RMS) RMS on-state current all conduction angles - 12 A
I TSM Non-repetitive peak half sine wave; T j = 25 ˚C prior to
on-state current
surge
t = 10 ms - 100 A
I 2 t I 2 t for fusing
t = 8.3 ms
t = 10 ms
-
-
110
50
A
A 2 s
dI T /dt Repetitive rate of rise of I TM = 20 A; I G = 50 mA; - 50 A/µs
on-state current after
triggering
dI G /dt = 50 mA/µs
I GM Peak gate current - 2 A
V GM Peak gate voltage - 5 V
V RGM Peak reverse gate voltage - 5 V
P GM Peak gate power - 5 W
P G(AV) Average gate power over any 20 ms period - 0.5 W
T stg Storage temperature -40 150 ˚C
T j Operating junction - 125 ˚C
temperature
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
June 1999 1 Rev 1.300

Philips Semiconductors
Thyristors
Product specification
BT151 series
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R th j-mb Thermal resistance - - 1.3 K/W
junction to mounting base
R th j-a Thermal resistance in free air - 60 - K/W
junction to ambient
STATIC CHARACTERISTICS
T j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I GT Gate trigger current V D = 12 V; I T = 0.1 A - 2 15 mA
I L Latching current V D = 12 V; I GT = 0.1 A - 10 40 mA
I H Holding current V D = 12 V; I GT = 0.1 A - 7 20 mA
V T On-state voltage I T = 23 A - 1.4 1.75 V
V GT Gate trigger voltage V D = 12 V; I T = 0.1 A - 0.6 1.5 V
V D = V DRM(max) ; I T = 0.1 A; T j = 125 ˚C 0.25 0.4 - V
I D , I R Off-state leakage current V D = V DRM(max) ; V R = V RRM(max) ; T j = 125 ˚C - 0.1 0.5 mA
DYNAMIC CHARACTERISTICS
T j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dV D /dt Critical rate of rise of V DM = 67% V DRM(max) ; T j = 125 ˚C;
off-state voltage
exponential waveform;
GK
t gt Gate controlled turn-on I TM = 40 A; V D = V DRM(max) ; I G = 0.1 A; - 2 - µs
Gate open circuit
R = 100 Ω
50
200
130
1000
-
-
V/µs
V/µs
t q
time
dI G /dt = 5 A/µs
Circuit commutated V D = 67% V DRM(max) ; T j = 125 ˚C;
turn-off time
I TM = 20 A; V R = 25 V; dI TM /dt = 30 A/µs;
- 70 - µs
dV D /dt = 50 V/µs; R GK = 100 Ω
June 1999 2 Rev 1.300

Philips Semiconductors
Thyristors
Product specification
BT151 series
Ptot / W
15
10
conduction
angle
degrees
30
60
90
120
180
form
factor
a
4
2.8
2.2
1.9
1.57
2.8
2.2
Tmb(max) / C
105.5
a = 1.57
1.9
112
ITSM / A
120
100
80
I
ITSM
T
T time
Tj initial = 25 C max
4
60
5
118.5
40
20
0
0 1 2 3 4 5 6 7
125
8
IT(AV) / A
Fig.1. Maximum on-state dissipation, P tot , versus
average on-state current, I T(AV) , where
a = form factor = I T(RMS) / I T(AV) .
0
1 10 100 1000
Number of half cycles at 50Hz
Fig.4. Maximum permissible non-repetitive peak
on-state current I TSM , versus number of cycles, for
sinusoidal currents, f = 50 Hz.
ITSM / A
1000
IT(RMS) / A
25
20
100
dI /dt limit T
15
IT
I TSM
10
T
time
Tj initial = 25 C max
10
10us 100us 1ms 10ms
T / s
Fig.2. Maximum permissible non-repetitive peak
on-state current I TSM , versus pulse width t p , for
sinusoidal currents, t p ≤ 10ms.
5
0
0.01 0.1 1 10
surge duration / s
Fig.5. Maximum permissible repetitive rms on-state
current I T(RMS) , versus surge duration, for sinusoidal
currents, f = 50 Hz; T mb ≤ 109˚C.
IT(RMS) / A
15
BT151
1.6
VGT(Tj)
VGT(25 C)
109 C
1.4
10
1.2
1
5
0.8
0.6
0
-50 0 50 100 150
Tmb / C
Fig.3. Maximum permissible rms current I T(RMS) ,
versus mounting base temperature T mb .
0.4
-50 0 50 100 150
Tj / C
Fig.6. Normalised gate trigger voltage
V GT (T j )/ V GT (25˚C), versus junction temperature T j .
June 1999 3 Rev 1.300

Philips Semiconductors
Thyristors
Product specification
BT151 series
3
2.5
2
IGT(Tj)
IGT(25 C)
IT / A
30
Tj = 125 C
Tj = 25 C
25
Vo = 1.06 V
Rs = 0.0304 ohms
20
typ
max
1.5
15
1
10
0.5
5
0
-50 0 50 100 150
Tj / C
Fig.7. Normalised gate trigger current
I GT (T j )/ I GT (25˚C), versus junction temperature T j .
0
0 0.5 1 1.5 2
VT / V
Fig.10. Typical and maximum on-state characteristic.
3
IL(Tj)
IL(25 C)
BT145
Zth j-mb (K/W)
10
2.5
2
1.5
1
0.1
1
0.01
P
D
t p
0.5
t
0
-50 0 50 100 150
Tj / C
Fig.8. Normalised latching current I L (T j )/ I L (25˚C),
versus junction temperature T j .
0.001
10us 0.1ms 1ms 10ms 0.1s 1s 10s
tp / s
Fig.11. Transient thermal impedance Z th j-mb , versus
pulse width t p .
3
IH(Tj)
IH(25 C)
dVD/dt (V/us)
10000
2.5
2
1000
1.5
1
100
RGK = 100 Ohms
gate open circuit
0.5
0
-50 0 50 100 150
Tj / C
Fig.9. Normalised holding current I H (T j )/ I H (25˚C),
versus junction temperature T j .
10
0 50 100 150
Tj / C
Fig.12. Typical, critical rate of rise of off-state voltage,
dV D /dt versus junction temperature T j .
June 1999 4 Rev 1.300

Philips Semiconductors
Thyristors
Product specification
BT151 series
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
4,5
max
10,3
max
3,7
1,3
2,8
5,9
min
15,8
max
3,0 max
not tinned
1,3
max
(2x)
1 2 3
2,54 2,54
3,0
13,5
min
0,9 max (3x)
0,6
2,4
Notes
1. Refer to mounting instructions for SOT78 (TO220) envelopes.
2. Epoxy meets UL94 V0 at 1/8".
Fig.13. SOT78 (TO220AB). pin 2 connected to mounting base.
June 1999 5 Rev 1.300

Philips Semiconductors
Thyristors
Product specification
BT151 series
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
© Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
June 1999 6 Rev 1.300