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Silicon Carbide Wafers

SiC wafer (Silicon Carbide Wafers) is a semiconductor material of ploytype 4H & 6H used in research & manufacturing industries. PWAM develops & produces large size substrates, silicon wafer using high-tech materials in its laboratory. Our main aim is to produce the best silicon wafer for you. http://www.qualitymaterial.net/products.html

SiC wafer (Silicon Carbide Wafers) is a semiconductor material of ploytype 4H & 6H used in research & manufacturing industries. PWAM develops & produces large size substrates, silicon wafer using high-tech materials in its laboratory. Our main aim is to produce the best silicon wafer for you.
http://www.qualitymaterial.net/products.html

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Ge(Germanium) Single Crystals and Wafers

General Properties

General Properties Structure

Crystal Growth Technology

Cubic, a = 5.6754 Å

Density: 5.765 g/cm3

Melting Point: 937.4 oC

Thermal Conductivity: 640

Czochralski

Doping available Undoped Sb Doping Doping In or Ga

Conductive Type

/ N P

Resistivity, cm 1 >35 < 0.05 0.05 - 0.1

EPD < 4x10 3 /cm 2 < 4x10 3 /cm 2 < 4x10 3 /cm 2

Crystal Grades and Application

(please specify when you order) Electronic Grade

Infrared Grade

Cell Grade

Used for diodes and transistors

Used for IR optical window

Used for substrates of solar cell

Standard Specs of Ge Crystal and wafers

Crystal Orientation

<111>,<100> and <110> ± 0.5 o or custom orientation

Crystal boule as grown

1" ~ 5" diameter x 200 mm Length

Standard blank as cut

1"x 0.5mm 2"x0.6mm 4"x0.7mm 5"&6"x0.8mm

Standard Polished wafer(One/two sides polished) 1"x 0.30 mm 2"x0.5mm 4"x0.5mm 5"&6"x0.6mm

Special size and orientation are available upon requested Wafers

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