Silicon Carbide Wafers
SiC wafer (Silicon Carbide Wafers) is a semiconductor material of ploytype 4H & 6H used in research & manufacturing industries. PWAM develops & produces large size substrates, silicon wafer using high-tech materials in its laboratory. Our main aim is to produce the best silicon wafer for you. http://www.qualitymaterial.net/products.html
SiC wafer (Silicon Carbide Wafers) is a semiconductor material of ploytype 4H & 6H used in research & manufacturing industries. PWAM develops & produces large size substrates, silicon wafer using high-tech materials in its laboratory. Our main aim is to produce the best silicon wafer for you.
http://www.qualitymaterial.net/products.html
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Ge(Germanium) Single Crystals and Wafers
General Properties
General Properties Structure
Crystal Growth Technology
Cubic, a = 5.6754 Å
Density: 5.765 g/cm3
Melting Point: 937.4 oC
Thermal Conductivity: 640
Czochralski
Doping available Undoped Sb Doping Doping In or Ga
Conductive Type
/ N P
Resistivity, cm 1 >35 < 0.05 0.05 - 0.1
EPD < 4x10 3 /cm 2 < 4x10 3 /cm 2 < 4x10 3 /cm 2
Crystal Grades and Application
(please specify when you order) Electronic Grade
Infrared Grade
Cell Grade
Used for diodes and transistors
Used for IR optical window
Used for substrates of solar cell
Standard Specs of Ge Crystal and wafers
Crystal Orientation
<111>,<100> and <110> ± 0.5 o or custom orientation
Crystal boule as grown
1" ~ 5" diameter x 200 mm Length
Standard blank as cut
1"x 0.5mm 2"x0.6mm 4"x0.7mm 5"&6"x0.8mm
Standard Polished wafer(One/two sides polished) 1"x 0.30 mm 2"x0.5mm 4"x0.5mm 5"&6"x0.6mm
Special size and orientation are available upon requested Wafers