Enxia Zhang - Vanderbilt University

Research Interests:
Enxia Zhang
Electrical Engineering & Computer Science
Department
5607 Stevenson Center
Vanderbilt University
Nashville, TN 37235
Phone: 615-343-6376
Email: enxia.zhang@vanderbilt.edu
Alternate email: yqfzhexia@163.com
Radiation effects and reliability of microelectronic materials and devices/circuits,
radiation response and reliability of emerging materials and devices and circuits.
Education:
Ph.D. Microelectronics and Solid State Electronics, Shanghai Institute of Microsystem and
Information Technology, Chinese Academy of Sciences, Shanghai, China, 2006
(Supervisor: Prof. Dr. Xi Wang).
M.S. Materials Science, Nanjing University of Science & Technology (NJUST), Nanjing,
China, 2003 (Supervisor: Prof. Dr. Qiang Wu).
B.S. Materials Science and Technology, NJUST, Nanjing, China, 2000.
Professional Experience :
� 2008.12-Present: Radiation Effects and Reliability Group, Electrical Engineering and
Computer Science Department, Vanderbilt University
Research assistant professor (2010.9-present) and Research associate
(2008.12-2009.9). Efforts mainly focused on radiation effects and
reliability of Silicon, SOI, and GaN based devices and circuits. At VU I
lead ZRAM characterization activities (funded by AFOSR MURI),
coordinate all testing and analysis for total dose radiation effects on SiC
and Ge pMOS (AFOSR MURI and DTRA basic research), support
characterization of GaN radiation response and low frequency noise
(ONR MURI), as well as perform research on radiation effects of 90 nm
and 45 nm silicon bulk/SOI technologies (DTRA); and partially be in
charge of the lab running/management and collaboration.
1

� 2007.7-2009.12: College of Material Science and Engineering, Shanghai University of
Engineering Science.
Associate professor. Research projects mainly focused on reliability of
microelectronic devices. Presided over several projects supported by
Innovation Program of Shanghai Municipal Education Commission
(Grant No. 08YZ156, No.gjd-07018, No.07-0075, etc.).
� 2003.03-2007.7: Shanghai Institute of Microsystems and Information Technology, CAS
Research associate (2006.1~2007.7) and Research assistant
(2003.3~2006.1). Primarily performed research on the reliability and
radiation hardness of SOI materials and devices, and the modification of
SOI materials with ion beam, supported by National Science Fund for
Distinguished Young Scholars (Grant No. 59925205), the Basic Research
Programs Shanghai Government (Grant No. 02DJ14069), and the
National Science Foundation of China (Grant No. 10305018).
� 2000.9-2003.3: Nanjing University of Science & Technology
Awards & Honors:
2009
2007
2005
2003
2003
Research assistant. Performed research on the preparation of
nano-crystalline Fe-B with machining-alloy method, and also studied the
preparation of Al-based compound material and its characterization
Research Fellowship for Foreign Researchers awarded by Japan
Society for the Promotion of Science (170/965, declined)
Excellent Young Scholars funded by Shanghai Municipal Education
Commission.
President Award in Shanghai Institute of Microsystem &
Information Technology
Excellent Graduation Award In NJUST funded by Chinese
Committee for National Defense Science & Technology.
Science & Technology Paper Award in NJUST
2000 Excellent Graduation Award of NJUST
2

Publication list:
A. Journal Articles
1. E. X. Zhang, C. X. Zhang, D. M. Fleetwood, R. D. Schrimpf, S. Dhar, S-H. Ryu, X. Shen,
and S. T. Pantelides. Bias-temperature instabilities and radiation effects on SiC MOSFETs,
ECS Transactions, vol. 35, No. 4: 369 -380 (2011).
2. Xiao Shen, En Xia Zhang, Cher Xuan Zhang, Daniel M. Fleetwood, Ronald D. Schrimpf,
Sarit Dhar, Sei-Hyung Ryu, and Sokrates T. Pantelides, Atomic-scale origins of
bias-temperature instabilities in SiC–SiO2 structures. Appl. Phys. Lett. 98, 063507 (2011).
3. C. X. Zhang, S. A. Francis, E. X. Zhang, D. M. Fleetwood, R. D. Schrimpf, K. F.
Galloway, E. Simoen, J. Mitard, and C. Claeys. Effect of ionizing radiation on defects and
1/f noise in Ge pMOSFETs, IEEE Trans. Nucl. Sci., in press.
4. E. X. Zhang, D. M. Fleetwood, F. El-Mamouni, M. L. Alles, R. D. Schrimpf, W. Xiong, C.
Hobbs, K. Akarvardar, and S. Cristoloveanu. Total ionizing dose effects on finFET-based
capacitor-less 1T-DRAMs, IEEE Trans. Nucl. Sci. 57, 3298-3304 (2010).
5. E. X. Zhang, D. M. Fleetwood, M. L. Alles, R. D. Schrimpf, F. El-Mamouni, W. Xiong,
and S. Cristoloveanu. Effects of fin width on memory windows in FinFET ZRAMs,
Solid-State Electronics 54, 1155-1159 (2010).
6. T. Roy, E. X. Zhang, Y. S. Puzyrev, D. M. Fleetwood, R. D. Schrimpf, B. K. Choi, A. B.
Hmelo, and S. T. Pantelides. Process dependence of proton-induced degradation in GaN
HEMTs, IEEE Trans. Nucl. Sci. 57, 3060-3065 (2010).
7. C. X. Zhang, E. X. Zhang, D. M. Fleetwood, R. D. Schrimpf, K. F. Galloway, E. Simoen,
J. Mitard, and C.Claeys. Total-dose-irradiation and annealing responses of Ge-pMOSFETs,
IEEE Trans. Nucl. Sci. 57, 3066-3070 (2010)
8. F. El Mamouni, M. Bawedin, E. X. Zhang, R. D. Schrimpf, D. M. Fleetwood, and S.
Cristoloveanu. Total dose effects on the memory window of irradiated capacitor-less
MSDRAM cells, IEEE Trans. Nucl. Sci. 57, 3054-3059 (2010).
9. Y. F. Li, N. Rezzak, E. X. Zhang, R. D. Schrimpf, D. M. Fleetwood, S. Cai, and Y. J. Wu.
Including the effects of process-related variability on radiation response in advanced
foundry process design kits, IEEE Trans. Nucl. Sci. 57, 3570-3574 (2010).
3

10. Nadia Rezzak, Ronald D. Schrimpf, Michael L. Alles, En Xia Zhang, Daniel M.
Fleetwood, and Yanfeng Albert Li. Layout-related stress effects on TID-induced leakage
current, IEEE Trans. Nucl. Sci. 57, 3288-3292 (2010).
11. T. Roy, Y. S. Puzyrev, E. X. Zhang, S. DasGupta, S. A. Francis, D. M. Fleetwood, R. D.
Schrimpf, U. K. Mishra, J. S. Speck, and S. T. Pantelides. 1/f noise in GaN HEMTs grown
under Ga-rich, N-rich, and NH3-rich conditions, Microelectron. Reliab., 2010, in press on
line.
12. Rajan Arora, Jerome Mitard, Eddy Simoen, En Xia Zhang, D. M. Fleetwood, B. K. Choi,
R. D. Schrimpf, K. F. Galloway, S. R. Kulkarni, M. Meuris, and Cor Claeys. Effects of
halo doping and Si capping layer thickness on total-dose effects in Ge p-MOSFETs, IEEE
Trans. Nucl. Sci., 57 (2010), 1933-1938.
13. Haima Tang, Zhongshan Zheng, En Xia Zhang, Fang Yu, Ning Li, and Ningjuan Wang.
Influence of nitrogen implantation into the buried oxide on the radiation hardness of
Silicon-on-insulator wafers. Chinese Physics B, in press (2010).
14. Haima Tang, Zhongshan Zheng, En Xia Zhang, Fang Yu, Ning Li, Ningjuan, Guohua Li
and Hongzhi Ma. Effects of high dose nitrogen implantation on the positive charge density
in the buried oxide of SIMOX SOI. Acta Physica Sinica, in press (2010).
15. Farah El Mamouni, En Xia Zhang, Ronald D. Schrimpf, Daniel M. Fleetwood, Robert A.
Reed, Sorin Cristoloveanu, and Weize Xiong. Fin-width dependence of ionizing
radiation-induced degradation in 100-nm gate length FinFETs. IEEE Trans. Nucl. Sci. 56
(2009), 3250-3255.
16. Enxia Zhang, Zhishui Yu, Yanggen Cao, Hui Yang, Zhengxuan Zhang, and Xi Wang.
Research on metastable electron traps in the modified SOI materials induced by Si ions
implantation. Journal of Vacuum Science & Technology, 26 (2008), L1-L4.
17. He Wei, Zhang Zheng-xuan, Zhang En-xia, Yu Wen-jie, Tian Hao, and Wang Xi.
Practical considerations in the design of SRAM cells on SOI. Microelectronics Journal 39
(2008), 1829–1833.
18. Zhaorui Song, Xinhong Cheng, Enxia Zhang, Yumei Xing, Yuehui Yu, Zhengxuan Zhang,
Xi Wang and Dashen Shen, Thin Solid Films, Vol. 517 (2008), 465-467.
19. E. X. Zhang, Zh. X. Zhang, J. Chen, Zh. R. Song, H. Yang, W. He, H. Tian and X. Wang.
Research on ion implantation effect on SIMOX material modification technique by X-ray
photoelectron spectroscopy. Nuclear Instruments and Methods in Physics Research B 257
4

(2007), 199-202.
20. Zheng Zhongshan, Zhang Enxia, Liu Zhongli, Zhang Zhengxuan, Li Ning and Li Guohua.
Effect of implantation of nitrogen into SIMOX buried oxide on its fixed positive charge
density. Acta Physica Sinica 56 (2007), 5446-5451.
21. Yang Hui, Zhang Enxia, and Zhang Zhengxuan. Effects of Si ion implantation on the
total dose radiation properties of SIMOX SOI materials. Chinese Journal of
Semiconductors 28 (2007), 323-326.
22. Zhaorui Song, Xinhong Cheng, Enxia Zhang, Yumei Xing, Qinwo Shen, Yuehui Yu,
Zhengxuan Zhang, Xi Wang, and Dashen Shen. Influence of nitrogen element on
total-dose radiation response of high-k Hf-based dielectric films. Nuclear Instruments and
Methods in Physics Research B 257 (2007), 501-504.
23. Yu Wen-jie, Zhang Zheng-xuan, Zhang En-xia, QianCong, He Wei Tian Hao Chen Ming,
and Wang Ru. Worst-case bias during total dose radiation of partially depleted SOI
MOSFET, Journal of Functional Materials and Devices 13 (2007), 549-553.
24. Tian Hao, Zhang Zhengxuan, Zhang Enxia, He Wei, Yu Wenjie, and Wang Ru.
Saturation of back-gate threshold voltage shift in SOI NMOS transistors at high total dose
for X-ray and 60 Co-γ irradiations, Journal of Functional Materials and Devices 13 (2007),
599-603.
25. Yang Hui, Zhang Zhengxuan, and Zhang Enxia. Total-dose radiation effect for SIMOX
SOI materials with the pseudo-MOS method. Journal of Functional Materials and Devices
13 (2007), 233-236.
26. He Wei, Zhang Zheng-Xuan, Zhang En-Xia, Qian Cong, Tian Hao, and Wang Xi.
Improvement of the radiation hardness of SIMOX buried oxides by silicon ion
implantation, High Energy Physics and Nuclear Physics 31 (2007), 388-390.
27. Enxia Zhang, Jiayin Sun, Zhengxuan Zhang, Cong Qian, Jun Jiang and Xi Wang. A study
on the total-dose response for modified silicon-on-insulator materials with pseudo-MOS
method. Semiconductor Science and Technology 21 (2006), 287-290.
28. E. X. Zhang, J. Y. Sun, J. Chen, M. Chen, Zh. X. Zhang, N. Li, G. Q. Zhang, Zh. L. Liu
and X. Wang. Research on nitrogen implantation energy dependence of the properties of
SIMON materials. Nuclear Instruments and Methods in Physics Research B 242 (2006),
585–587.
29. Zhang En-Xia, Qian Cong, Zhang Zheng-Xuan, Lin Cheng-Lu, and Wang Xi. Total dose
5

ad-hard improvement for silicon-on-insulator materials by modifying the buried oxide
with ion implantation. Chinese Physics 15 (2006), 792-797.
30. Qian Cong, Zhang Enxia, He Wei, Zhang Zhengxuan, Zhang Feng, Lin Chenglu, etc.
Total dose irradiation effect of partially-depleted NMOSFET /S IMOX with two different
gate structures, Journal of Functional Materials and Devices 12 (2006), 308-312.
31. He Wei, Zhang Enxia, Qian Cong, Zhang Zhengxuan. Total dose radiation effect on
partially-depleted CMOS/SOI with enclosed-gate structure. Journal of Functional
Materials and Devices 12 (2006), 313-316.
32. Qian Cong, Zhang Zhengxuan, Zhang Enxia, He Wei, Yang Hui, Zhang Feng, Lin
Chenglu. Effect of Si-implantation induced nanocrystals on reducing the oxide and
interface traps densities of PD SOI MOSFET under total-dose irradiation (2006). IEEE
1-4244-0047-3/06.
33. He Wei, Zhang Zheng-xuan, Zhang En-xia, Qian Cong, Tian Hao, and Wang Xi. Effect
of Implanting Silicon in buried oxide on the radiation hardness of the partially-depleted
CMOS/SOI (2006). IEEE 1-4244-0161-5/06.
34. Enxia Zhang, Wanbing Yi, Jing Chen, Zhengxuan Zhang and Xi Wang. Research on the
effect of nitrogen implantation doses with the structure of separated by implanted oxygen
and nitrogen. Smart Materials and Structures 14 (2005), 42-45.
35. E. X. Zhang, J. Y. Sun, J. Chen, M. Chen, Zh. X. Zhang, N. Li, G. Q. Zhang, Zh. L. Liu
and X. Wang. The effect of different implantation energies for nitrogen implanted into
SIMOX on the total dose rad-hard properties of SOI materials. Journal of Electronic
Materials 34 (2005), 53-56.
36. Enxia Zhang, Wanbing Yi, Xianghua Liu, Chen Meng, Zhongli Liu, and Xi Wang.
Silicon on insulating multi-layers for total-dose irradiation hardness. Chinese Physics
Letters 21 (2004), 1600-1603.
37. Enxia Zhang, Jiayin Sun, Wanbing Yi, Jing Chen, Bo Jin, Meng Chen, Zhengxuan Zhang,
Guoqiang Zhang and Xi Wang. Investigation on the dependence of properties on nitrogen
implantation doses for SIMON materials. Journal of Functional Materials and Devices 10
(2004), 437-440.
38. Enxia Zhang, Cong Qiang, Zhengxuan Zhang, and Xi Wang. Effect of nitrogen
implantation technologies on total dose rad-hardness of SIMON materials. Chinese
Journal of Semiconductors 26 (2005), 1269-1272.
6

39. Zheng Zhongshan, Liu Zhongli, Zhang Guoqiang, Li Ning, Fan Kai, Zhang Enxia, Yi
Wanbing, Chen Meng, and Wang Xi. Effect of the technology of implanting nitrogen into
buried oxide on the radiation hardness of the top gate oxide for partially depleted SOI
PMOSFET. Chinese Physics 14 (2005), 565-570.
40. Zhongshan Zheng, Zhongli Liu, Guoqiang Zhang, Lining, Ning Li, Guohua Li, Hongzhi
Ma, Zhang Enxia, Zhengxuan Zhang, and Xi Wang. Improvement of the radiation
hardness of SIMOX buried layers using nitrogen implantation. Semiconductor Science
and Technology 20 (2005), 481-484.
41. Zheng-Zhongshan, Liu-Zhongli, Zhang-Guoqiang, Li-Ning, Fan-Kai, Zhang Enxia,
Yi-Wanbing, Chen-Men, and Xi Wang. Effects of techniques of implanting nitrogen into
buried oxide on the characteristics of partially depleted SOI PMOSFET. Chinese Physics
Letters 22 (2005), 654-656.
42. Jing Chen, Xiang Wang, Bo Jin, Enxia Zhang, Jiayin Sun, and Xi Wang. Effect of
ion-induced defects and oxygen concentration in annealing atmosphere on formation of
buried oxide layer in SIMOX materials. Semiconductor Science and Technology 20
(2005), 305-309.
43. Zheng Zhongshan, Liu Zhongli, Zhang Guoqiang, Li Ning, Li Guohua, Ma Hongzhi,
Zhang Enxia, Zhang Zhengxuan and Wang Xi. Sensitivity of total-dose radiation
hardness of SIMOX buried oxide to dose of nitrogen implantation into buried oxide.
Chinese Journal of Semiconductors 26 (2005), 5-9.
44. W. B. Yi, E. X. Zhang, Men Chen, N. Li, G. Q. Zhang, Z. L. Liu, and X. Wang.
Formation of total-dose-radiation hardened materials by sequential oxygen and nitrogen
implantation and multi-step annealing, Semiconductor Science and Technology 19 (2004),
571-573.
45. Enxia Zhang, Qiang Wu, and Qing Lin. Research on the formation of non-crystalline by
mechanical alloying with Fe-B metal powder. Chinese Journal of Physical Test 2 (2002),
7-9.
B. Conference Proceedings and Presentations
1. E. X. Zhang, C. X. Zhang, D. M. Fleetwood, R. D. Schrimpf, X. Shen, S. T. Pantelides, S.
7

Dhar, and S-H. Ryu, “Bias-temperature instabilities and radiation effects on SiC
MOSFETs,” Electrochemical Society Meeting, Montreal, QC, May 1-6, 2011.
2. T. Roy, E. X. Zhang, D. M. Fleetwood, R. D. Schrimpf, Y. S. Puzyrev, and S. T.
Pantelides, “Reliability limiting defects in AlGaN/GaN HEMTs,” 2011 Intl. Reliability
Physics Symposium, Monterey, CA, April 10-14, 2011.
3. F. El-Mamouni, E. X. Zhang N. C. Hooten, R. D. Schrimpf, R. A. Reed, K. F. Galloway,
D. McMorrow, J. Warner, E. Simoen, C. Claeys. Laser-Induced Current Transients in
Bulk FinFETs. 2011 IEEE Nuclear and Space Radiation Effects Conference, Las Vegas,
July 23-30, 2011.
4. R. Arora, E. X. Zhang, K.A. Moen, J.D. Cressler, D.M. Fleetwood, R.D. Schrimpf, A.K.
Sutton, H.M. Nayfeh and G. Freeman. Layout-Induced Trade-Offs Between RF
Performance and Total-Dose Tolerance in 45 nm RF-CMOS. 2011 IEEE Nuclear and
Space Radiation Effects Conference, Las Vegas, July 23-30, 2011.
5. C. X. Zhang, E. X. Zhang, D. M. Fleetwood, R. D. Schrimpf, S. Dhar, S.-H. Ryu, X. Shen,
and S. T. Pantelides. Effects of bias on the irradiation and annealing responses of SiC
MOS devices. 2011 IEEE Nuclear and Space Radiation Effects Conference, Las Vegas,
July 23-30, 2011.
6. Jae-Joon Song, Bo Kyoung Choi, En Xia Zhang, Ronald D. Schrimpf, Daniel M.
Fleetwood, Chan-Hoon Park, Yoon-Ha Jeong, and Ohyun Kim. Fin Width and Bias
Dependence of the Response of Triple-Gate MOSFETs to Total Dose Irradiation. 2011
IEEE Nuclear and Space Radiation Effects Conference, Las Vegas, July 23-30, 2011.
7. N. M. Atkinson, J. R. Ahlbin, A. F. Witulski, N. J. Gaspard, W. T. Holman, B. L. Bhuva, E.
X. Zhang, L. Chen, and L. W. Massengill. Effect of transistor density and charge sharing
on single-event transients in 90-nm bulk CMOS. 2011 IEEE Nuclear and Space Radiation
Effects Conference, Las Vegas, July 23-30, 2011.
8. Jonathan R. Ahlbin, Nick Atkinson, Matthew J. Gadlage, Nelson Gadlage, Bharat L.
Bhuva, T. Daniel Loveless, Arthur F. Witulski, W. Timothy Holman, En Xia Zhang, Li
Chen, Lloyd W. Massengill. Influence of N-Well Contacts in Determining the Pulse Width
of Single-Event Transients. 2011 IEEE Nuclear and Space Radiation Effects Conference,
Las Vegas, July 23-30, 2011.
9. Shweta Bhandaru, En Xia Zhang, Daniel M. Fleetwood, Robert A. Reed, Robert A.
Weller and Sharon M. Weiss. Accelerated oxidation of silicon due to x-ray irradiation. 12 th
European Conference Radiation Effects on Components and Systems, Sevilla, Spain,
19-23 Sept. 2011.
8

10. S. Ashley Francis, Cher Xuan Zhang, En Xia Zhang, Daniel. M. Fleetwood, Ronald D.
Schrimpf, Kenneth F. Galloway, Eddy Simoen, Jerome Mitard, and Cor Claeys.
Comparison of Charge Pumping and 1/f Noise in Irradiated Ge pMOSFETs. 12 th European
Conference Radiation Effects on Components and Systems, Sevilla, Spain, 19-23 Sept.
2011.
11. Nelson Gaspard, Jonathan R. Ahlbin, Nick Atkinson, Matthew J. Gadlage, Arthur F
Witulski, William T. Holman, Bharat L. Bhuva, Enxia Zhang, Lloyd W. Massengill.
Characterization of Single-Event Transients of Body-Tied vs. Floating-Body Circuits in
150 nm 3D SOI. 12 th European Conference Radiation Effects on Components and
Systems, Sevilla, Spain, 19-23 Sept. 2011.
12. T. Roy, Y. S. Puzyrev, E. X. Zhang, D. M. Fleetwood, R. D. Schrimpf, S. T. Pantelides,
“Defect energy distribution in GaN/AlGaN heterostructures grown in Ga-rich and
ammonia-rich conditions,” March American Physical Society Meeting, Dallas, TX, March
21-25, 2011.
13. Y. S. Puzyrev, T. Roy, E. X. Zhang, D. M. Fleetwood, R. D. Schrimpf, and S. T.
Pantelides, “Atomic displacements in proton-irradiated AlGaN/GaN heterostructures,”
March American Physical Society Meeting, Dallas, TX, March 21-25, 2011.
14. F. El-Mamouni, E. X. Zhang, R. A. Reed, R. D. Schrimpf, D. McMorrow, K. F.
Galloway, E. Simoen, C. Claeys, W. Xiong, S. Cristoloveanu, “Pulse laser-Induced
Transient Currents in Bulk and Silicon-On-Insulator FinFET Devices”, 2011 Intl.
Reliability Physics Symposium, Monterey, CA, April 10-14, 2011.
15. M. L. Alles, J. L. Davidson, S. T. Pantelides, R. D. Schrimpf, D. M. Fleetwood, K. I.
Bolotin, E. X. Zhang, C. X. Zhang, J. Greaving, B. Wang, AKM Newaz, J. U. Lee, and C.
D. Cress. Radiation Effects in Carbon Devices – It’s All About the Substrate. The
Government Microcircuit Applications & Critical Technology Conferences (GOMAC),
March 21-24, 2011 - Orlando, FL.
16. T. D. Loveless, J. R. Ahlbin, N. M. Atkinson, E.X. Zhang, N. Gaspard, P. Maillard, M. J.
Gadlage, O. A. Amusan, M. C. Casey, W. T. Holman, B. L. Bhuva, and L. W. Massengill,
Single-Event Effects Characterization of Analog, Digital, and Low-power Electronics
Designed in a Multiple-Tiered SOI Process. The Government Microcircuit Applications &
Critical Technology Conferences (GOMAC), March 21-24, 2011 - Orlando, FL.
17. En Xia Zhang, Cher X. Zhang, Daniel M. Fleetwood, Ronald D. Schrimpf, Sarit Dhar,
Sei-Hyung Ryu, Xiao Shen, and Sokrates T. Pantelides, “Bias-temperature instabilities
in 4H-SiC MOS capacitors”, 41 th IEEE Semiconductor Interface Specialists Conference.
San Diego, CA, Dec. 2 nd , 2010.
18. En Xia Zhang, Daniel M. Fleetwood, Farah El Mamouni, Michael L. Alles, Ronald D.
9

Schrimpf, Weize Xiong, and Sorin Cristoloveanu. “Radiation effects on FinFET-based
ZRAMs.” 2010 IEEE Nuclear and Space Radiation Effects Conference, Denver, 2010.
19. T. Roy, E. X. Zhang, S. A. Francis, D. M. Fleetwood, and R. D. Schrimpf. “A
comparative study of 1/f noise in GaN/AlGaN HEMTs grown under Ga-rich, N- rich and
NH3-rich conditions.” Reliability of Compound Semiconductors Workshop, Portland,
Oregon, May 17 th , 2010.
20. T. Roy, En Xia Zhang, D. M. Fleetwood, R. D. Schrimpf, D. F. Brown, and U. K. Mishra.
“Process dependence of proton-induced degradation in GaN/AlGaN HEMTs.” 2010 IEEE
Nuclear and Space Radiation Effects Conference, Denver, 2010.
21. C. X. Zhang, E. X. Zhang, D. M. Fleetwood, R. D. Schrimpf, K. F. Galloway, E. Simoen,
J. Mitard, and C.Claeys. Total-dose-irradiation and annealing responses of Ge-pMOSFETs.
2010 IEEE Nuclear and Space Radiation Effects Conference, Denver, 2010.
22. Nadia Rezzak, En Xia Zhang, Michael L. Alles, Ronald D. Schrimpf, and Harold Hughes.
Total-Ionizing-Dose Radiation Response of Partially-Depleted SOI devices. 2010 IEEE
International SOI Conference, San Diego, 2010.
23. Cher Xuan Zhang, S. Ashley Francis, En Xia Zhang, Daniel M. Fleetwood, Ronald D.
Schrimpf, Kenneth F. Galloway, Eddy Simoen, and Cor Claeys. Effect of ionizing
radiation on defects and 1/f noise in Ge pMOSFETs, 11th European Conference on
Radiation and Its Effects on Components and Systems, 2010.
24. F. El Mamouni, M. Bawedin, E. X. Zhang, R. D. Schrimpf, D. M. Fleetwood, and S.
Cristoloveanu. Total dose effects on the memory window of irradiated capacitor-less
MSDRAM cells. 2010 IEEE Nuclear and Space Radiation Effects Conference, Denver,
2010.
25. Y. F. Li, N. Rezzak, E. X. Zhang, R. D. Schrimpf, D. M. Fleetwood, S. Cai, and Y. J. Wu.
Including the effects of process-related variability on radiation response in advanced
foundry process design kits. 2010 IEEE Nuclear and Space Radiation Effects Conference,
Denver, Jul. 18 th , 2010.
26. Nadia Rezzak, Ronald D. Schrimpf, Michael L. Alles, En Xia Zhang, Daniel M.
Fleetwood, and Yanfeng Albert Li. Layout-related stress effects on TID-induced leakage
current. 2010 IEEE Nuclear and Space Radiation Effects Conference, Denver, Jul. 18 th ,
2010.
27. Rajan Arora, Kurt A. Moen, Anuj Madan, John D. Cressler, En Xia Zhang, Daniel M.
10

Fleetwood, Ronald D. Schrimpf, Akil K. Sutton and Hasan M. Nayfeh. Impact of Body
Tie and Source/Drain Contact Spacing on the Hot Carrier Reliability of 45-nm RF-CMOS.
IEEE International Integrated Reliability Workshop, Stanford Sierra Conference Center,
Oct. 10 th , 2010.
28. En Xia Zhang, Daniel M. Fleetwood, Farah E. Mamouni, Dennis R. Ball, Michael L.
Alles, Ronald D. Schrimpf, Weize Xiong, and Sorin Cristoloveanu. Charge trapping
effects on memory windows in SOI FinFET ZRAM transistors. 40th IEEE Semiconductor
Interface Specialists Conference. Arlington, VA, Dec. 2 nd , 2009.
29. En Xia Zhang, Daniel M. Fleetwood, Farah E. Mamouni, Michael L. Alles, Ronald D.
Schrimpf, Weize Xiong, and Sorin Cristoloveanu. Effects of fin width on memory
windows in FinFET ZRAMs. International Semiconductor Device Research Symposium
(ISDRS), University of Maryland, MD, Dec.9 th , 2009.
30. Farah El Mamouni, En Xia Zhang, Ronald D. Schrimpf, Daniel M. Fleetwood, Robert A.
Reed, Sorin Cristoloveanu, and Weize Xiong. Fin-width dependence of ionizing
radiation-induced degradation in 100-nm gate length FinFETs. 2009 IEEE Nuclear and
Space Radiation Effects Conference, Quebec, Canada, July 19 th , 2009.
31. Rajan Arora, Jerome Mitard, Eddy Simoen, En Xia Zhang, D. M. Fleetwood, B. K. Choi,
R. D. Schrimpf, K. F. Galloway, S. R. Kulkarni, M. Meuris, and Cor Claeys. Effects of
halo doping and Si capping layer thickness on total-dose effects in Ge p-MOSFETs. 10 th
European Conference on Radiation Effects on Components and Systems Radiation Effects
on Components and Systems, Bruges, Belgium, Sept. 14 th , 2009.
32. Chunwei Ma, En Xia Zhang, Peiquan Xu, and Jianping He. The shear strength of the
flip-chip solder bump. Fracture Mechanics 2008, 443-446.
33. E.X. Zhang, Zh.X. Zhang, J. Chen, Zh.R. Song, H. Yang, W. He, H. Tian and X. Wang.
Research on ion implantation effect on SIMOX material modification technique by X-ray
photoelectron spectroscopy. 15 th International Conference on Ion Beam Modification of
Materials, Monterey, Taormina, Italy, September 18 th , 2006.
34. Zhaorui Song, Xinhong Cheng, Enxia Zhang, Yumei Xing, Qinwo Shen,Yuehui Yu,
Zhengxuan Zhang, Xi Wang, and Dashen Shen. Influence of nitrogen element on
total-dose radiation response of high-k Hf-based dielectric films. 15 th International
Conference on Ion Beam Modification of Materials, Monterey, Taormina, Italy, September
18 th , 2006.
11

35. He Wei, Zhang En-xia, Qian Cong and Zhang Zheng-xuan. Reducing back channel
threshold voltage shifts of partially depleted SOI by Si ion implantation. 2006 IEEE
International SOI Conference Proceedings (2006), 61-62.
36. Enxia Zhang, Cong Qian, Zhengxuan Zhang, and Xi. Wang. Research on the formation
of the nitrided-SIMOX material by ion implantation, International Conference on
Materials for Advanced Technologies (ICMAT 2005), Singapore, July 2005.2.
37. E. X. Zhang, J. Y. Sun, J. Chen, M. Chen, Zh. X. Zhang, N. Li, G. Q. Zhang, Zh. L. Liu
and X. Wang. Research on nitrogen implantation energy dependence of the properties of
SIMON materials. 14 th International Conference on Ion Beam Modification of Materials,
Monterey, California, USA, September 5 th , 2004.
38. Enxia Zhang, Cong Qiang, Zhengxuan Zhang, Chenglu Lin, and Xi Wang. Research on
rad-hard improvement of SIMOX materials by co-implantation of oxygen and nitrogen
ions, Semiconductor Materials Technical Committee, Shanghai, December 2004, 1-4.
12