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Device simulation - Silvaco International

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IMS CAD & Design Services<br />

Atlas input structure<br />

The physical structure built by Athena is used as input by Atlas to predict its<br />

electrical behavior. The grid of the input structure is crucial for the device <strong>simulation</strong>.<br />

There is a trade-off between<br />

the requirements of accuracy<br />

and numerical efficiency<br />

Maria Concetta Allia<br />

Accuracy requires a fine grid<br />

Numerical efficiency is greater<br />

when fewer grid points are used<br />

The most efficient way to work is to allocate a fine grid only in critical areas and<br />

a coarser grid elsewhere. Most critical areas tend to coincide with reverse biased<br />

metallurgical junctions.<br />

Typical critical areas<br />

Transverse electric field under the MOSFET gate<br />

Areas of considerable recombination effects<br />

Areas of high impact ionization<br />

<strong>Device</strong><br />

6

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