Device simulation - Silvaco International
Device simulation - Silvaco International
Device simulation - Silvaco International
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IMS CAD & Design Services<br />
Atlas input structure<br />
The physical structure built by Athena is used as input by Atlas to predict its<br />
electrical behavior. The grid of the input structure is crucial for the device <strong>simulation</strong>.<br />
There is a trade-off between<br />
the requirements of accuracy<br />
and numerical efficiency<br />
Maria Concetta Allia<br />
Accuracy requires a fine grid<br />
Numerical efficiency is greater<br />
when fewer grid points are used<br />
The most efficient way to work is to allocate a fine grid only in critical areas and<br />
a coarser grid elsewhere. Most critical areas tend to coincide with reverse biased<br />
metallurgical junctions.<br />
Typical critical areas<br />
Transverse electric field under the MOSFET gate<br />
Areas of considerable recombination effects<br />
Areas of high impact ionization<br />
<strong>Device</strong><br />
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