FM200TU-2A datasheet - Ineltron

Drain-source voltage G-S Short
Gate-source voltage
D-S Short
Drain current
TC’ = 137°C*
Avalanche current
Source current
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
3
Pulse* 2
L = 10µH Pulse* 2
Pulse* 2
TC = 25°C
TC’ = 25°C* 3
VDSS
VGSS
ID(rms)
IDM
IDA
IS(rms)*
Terminals to base plate, f = 60Hz, AC 1 minute
Main terminals M6 screw
Mounting M6 screw
Typical value
1
ISM* 1
PD* 4
PD* 4
ABSOLUTE MAXIMUM RATINGS (Tch = 25°C unless otherwise specified.)
Symbol
Item
Conditions
Tch
Tstg
Viso
—
—
ELECTRICAL CHARACTERISTICS (Tch = 25°C unless otherwise specified.)
Symbol
IDSS
VGS(th)
IGSS
rDS(ON)
(chip)
VDS(ON)
(chip)
R(lead)
Ciss
Coss
Crss
QG
td(on)
tr
td(off)
tf
trr* 1
Qrr* 1
VSD* 1
Rth(ch-c)
Rth(ch-c’)
Rth(c-f)
Rth(c’-f’)
Item
Drain cutoff current
Gate-source threshold voltage
Gate leakage current
Static drain-source
On-state resistance
Static drain-source
On-state voltage
Lead resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Source-drain voltage
Thermal resistance
Contact thermal resistance
NTC THERMISTOR PART
Symbol
RTh* 6
B* 6
* 1: It is characteristics of the anti-parallel, source-drain free-wheel diode (FWDi).
* 2: Pulse width and repetition rate should be such that the device channel temperature (Tch) does not exceed Tch max rating.
* 3: Case Temperature (Tc’) measured point is just under the chips. If use this value, Rth(f-a) should be measured just under the chips.
* 4: Pulse width and repetition rate should be such as to cause negligible temperature rise.
* 5: TTh is thermistor temperature.
*6:
Resistance
B Constant
Parameter
Conditions
VDS = VDSS, VGS = 0V
ID = 10mA, VDS = 10V
VGS = VGSS, VDS = 0V
ID = 100A
VGS = 15V
ID = 100A
VGS = 15V
ID = 100A
terminal-chip
VDS = 10V
VGS = 0V
VDD = 48V, ID = 100A, VGS = 15V
VDD = 48V, ID = 100A, VGS ± 15V
RG = 13Ω, Inductive load
IS = 100A
IS = 100A, VGS = 0V
MOSFET part (1/6 module)* 7
MOSFET part (1/6 module)* 3
Case to heat sink, Thermal grease Applied* 8 (1/6 module)
Case to heat sink, Thermal grease Applied* 3, * 8 (1/6 module)
Conditions
TTh = 25°C* 5
Resistance at TTh = 25°C, 50°C* 5
2
Tch = 25°C
Tch = 125°C
Tch = 25°C
Tch = 125°C
Tch = 25°C
Tch = 125°C
MITSUBISHI
FM200TU-2A
HIGH POWER SWITCHING USE
INSULATED PACKAGE
Min.
—
4.7
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Min.
—
—
Ratings
100
±20
100
200
100
100
200
410
560
–40 ~ +150
–40 ~ +125
2500
3.5 ~ 4.5
3.5 ~ 4.5
600
Limits
Typ.
—
6
—
2.4
4.1
0.24
0.41
1.2
1.68
—
—
—
760
—
—
—
—
—
3.6
—
—
—
0.1
0.09
Limits
Typ.
100
4000
* 7: Case Temperature (Tc) measured point is shown in page OUTLINE DRAWING.
* 8: Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].
R25 1 1
B = In( )/( )
R50 T25 T50
R25: resistance at absolute temperature T25 [K]: T25 = 25 [°C]+273.15 = 298.15 [K]
R50: resistance at absolute temperature T50 [K]: T50 = 50 [°C]+273.15 = 323.15 [K]
Max.
1
7.3
1.5
3.3
—
0.33
—
—
—
50
7
4
—
400
300
450
300
250
—
1.3
0.30
0.22
—
—
Max.
—
—
Unit
V
V
Arms
A
A
Arms
A
W
W
°C
°C
Vrms
N • m
N • m
g
Unit
mA
V
µA
mΩ
V
mΩ
nF
nC
ns
ns
µC
V
K/W
Unit
kΩ
K
Feb. 2009

PERFORMANCE CURVES
DRAIN CURRENT ID (A)
DRAIN-SOURCE
ON-STATE RESISTANCE rDS(ON) (mΩ)
DRAIN-SOURCE
ON-STATE VOLTAGE VDS(ON) (V)
200
160
120
80
40
2.0
1.6
1.2
0.8
0.4
0 0 0.2 0.4 0.6 0.8 1.0
6
5
4
3
2
1
0
OUTPUT CHARACTERISTICS
(TYPICAL)
Chip
VGS = 20V
0 20 40 60 80 100 120 140 160
Tch = 25°C
15V 12V
10V
VGS = 12V
9V
Tch = 25°C
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE ON-STATE
VOLTAGE VS. TEMPERATURE
(TYPICAL)
Chip
ID = 100A
VGS = 15V
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE ON-STATE
VOLTAGE VS. GATE BIAS
(TYPICAL)
Chip
ID = 200A
ID = 100A
ID = 50A
0
0 4 8 12 16 20
GATE-SOURCE VOLTAGE VGS (V)
3
DRAIN CURRENT ID (A)
GATE THRESHOLD VOLTAGE VGS(th) (V)
CAPACITANCE (nF)
200
150
100
50
MITSUBISHI
FM200TU-2A
HIGH POWER SWITCHING USE
INSULATED PACKAGE
0
5 7 9 11 13 15
7
6
5
4
3
2
1
0
10 2
7
5
3
2
10 1
7
5
3
TRANSFER CHARACTERISTICS
(TYPICAL)
Chip
VDS = 10V
Tch = 125°C
VDS = 10V
ID = 10mA
Tch = 25°C
GATE-SOURCE VOLTAGE VGS (V)
GATE THRESHOLD
VOLTAGE VS. TEMPERATURE
(TYPICAL)
0 20 40 60 80 100 120 140 160
CHANNEL TEMPERATURE Tch (°C)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
Ciss
100 2
10 –1 2 100 3 5 7 2 101 3 5 7 2 102 VGS = 0V
Coss
Crss
3 5 7
DRAIN-SOURCE VOLTAGE VDS (V)
Feb. 2009

GATE-SOURCE VOLTAGE VGS (V)
SWITCHING TIME (ns)
SWITCHING LOSS (mJ/pulse)
20
16
12
8
4
0
10 3
7
5
3
2
4
MITSUBISHI
FM200TU-2A
HIGH POWER SWITCHING USE
INSULATED PACKAGE
10
0 200 400 600 800 1000 1200
0.5 0.6 0.7 0.8 0.9 1.0
1
101 102 2 3 5 7 103 10
2 3 5 7
1
102 7
5
tf
Conditions:
VDD = 48V
3
VGS = ±15V
2
RG = 13Ω
Tch = 125°C
Inductive load
101 7
5
3
2
GATE CHARGE CHARACTERISTICS
(TYPICAL)
ID = 100A
VDD = 24V VDD = 48V
GATE CHARGE QG (nC)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
td(off)
td(on)
tr
DRAIN CURRENT ID (A)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10 –2
10 –1
10
7
5
3
2
0
7
5
3
2
101 102 2 3 5 7 103 Esw(off)
Esw(on)
Err
Conditions:
VDD = 48V
VGS = ±15V
RG = 13Ω
Tch = 125°C
Inductive load
2 3 5 7
DRAIN CURRENT ID (A)
SOURCE CURRENT IS (A)
SWITCHING TIME (ns)
SWITCHING LOSS (mJ/pulse)
10 3
7
5
3
2
10 2
7
5
3
2
104 7
5
3
2
103 7
5
3
2
102 7
5
3
2
101 0
101 7
5
3
2
100 7
5
10 –1
3
2
Err
7
5
3
2
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
Chip
VGS = 0V
Tch = 125°C
Tch = 25°C
SOURCE-DRAIN VOLTAGE VSD (V)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
td(off)
td(on)
tf
Conditions:
VDD = 48V
VGS = ±15V
ID = 100A
Tch = 125°C
Inductive load
20 40 60 80 100 120 140
GATE RESISTANCE RG (Ω)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
Esw(on)
Esw(off)
Conditions:
VDD = 48V
VGS = ±15V
ID = 100A
Tch = 125°C
Inductive load
10
0 20 40 60 80 100 120 140
–2
GATE RESISTANCE RG (Ω)
tr
Feb. 2009