à rsrapport 2012 - Unik

20. Khandelwal S., Chauhan, Y, Lu, D. D., Karim, M. A,Venugopalan, S., Angada, B. S., Niknejad, A. M., Hu, C,Analytical Surface Potential Calculation in UTBSOI MOSFETwith Independent Back-Gate Control, I: Nanotech 2012:Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS,Fluidics and Computation: Technical Proceedings of the 2012NSTI Nanotechnology Conference and Expo (Volume 2).CRC Press 2012 ISBN 978-1-4665-6275-2, s. 780-783.21. Monga, U., Khandelwal S., Aghassi, J, Sedlmeir, J., Fjeldly T.A., Assessment of NBTI in Presence of Self-Heating in High-kSOI FinFETs, IEEE Electron Device Letters 2012, Volum 33 (11)s. 1532-1534, ISSN 0741-3106.22. Khandelwal S., Fjeldly T. A., A Surface-Potential-BasedCompact Model for Study of Non-Linearities in AlGaAs/GaAsHEMTs, IEEE Compound Semiconductor Integrated CircuitSymposium (CSICS), 2012 s. -4, ISSN 2162-7940.23. Khandelwal S., Fjeldly T. A., A physics based compact modelof I-V and C-V characteristics in AlGaN/GaN HEMT devices,Solid-State Electronics 2012, Volum 76, s. 60-66,ISSN 0038-1101.24. Khandelwal S., Chauhan, Y.S., Fjeldly T. A., AnalyticalModeling of Surface-Potential and Intrinsic Charges in AlGaN/GaN HEMT Devices, IEEE Transactions on Electron Devices2012, Volum 59 (10) s. 2856-2860, ISSN 0018-9383.25. Long, E. S., Azarov, A., Kløw F., Galeckas, A., Kuznetsov, A.,Diplas, S., Ge redistribution in SiO2/SiGe structures underthermal oxidation: Dynamics and predictions, Journal ofApplied Physics 2012, Volum 111 (2) s. -10,ISSN 0021-8979.26. Landmark L., Larsen, E. , Flathagen J., Pham V. Q., AdaptingOLSR for WSNs (iOLSR) Using Locally Increasing Intervals,Sensors & Transducers Journal 2012, Volum 14 (2) s. 254-268,ISSN 1726-5479.27. Maham B., Tirkkonen, O, Hjørungnes A., Impactof Transceiver I/Q Imbalance on Transmit Diversity ofBeamforming OFDM Systems, In proc. of IEEE Transactions onCommunications,March 2012, Volume 60, Issue 3,pp 643-648, ISSN 0090-6778.28. Maham B., Hjørungnes A., Opportunistic Relaying for MIMOAmplify-and-Forward Cooperative Networks, Springer WirelessPersonal Communications, published online January 2012,pp 1-25, DOI: 10.1007/s11277-011-0499-9.29. Marstein E. S., Haug H., Nordseth, Ø., Monakhov,E., Photoluminescence imaging under applied bias forcharacterization of Si surface passivation layers, Solar EnergyMaterials and Solar Cells 2012, Volum 106, (November)s. 60-65, ISSN 0927-0248.30. Nawaz M., Ahmad, A., A TCAD-based modeling of GaN/InGaN/Si solar cells, Semiconductor Science and Technology2012, Volum 27 (3:035019) s. -9, doi:10.1088/0268-1242/27/3/035019.31. Bang H. J., Gesbert, D, Orten P., On the Rate Gap BetweenMulti- and Single-Cell Processing Under OpportunisticScheduling, IEEE Transactions on Signal Processing 2012,Volum 60 (1) s. 415-425, ISSN 1053-587X.32. Skaar J., Haakestad, M. W., Inverse scattering of dispersivestratified structures, Journal of the Optical Society of America.B, Optical physics 2012, Volum 29 (9) s. 2438-2445,ISSN 0740-3224.33. Kim, S., Hadzialic, S., Sudbø A., Solgaard, O., Reflectivity andpolarization dependence of polysilicon single-film broadbandphotonic crystal micro-mirrors, Optics Express 2012, Volum 20(6) s. 6306-6315, ISSN 1094-4087.34. Svendsen G. K., Weman, H., Skaar J., Investigations of Braggreflectors in nanowire lasers, Journal of Applied Physics 2012,Volum 111 (12) s. -11, ISSN 0021-8979.35. Thorstensen J. B., Gjessing J., Haugan, E., Foss, S. E, 2Dperiodic gratings by laser processing., Energy Procedia 2012,Volum 27, s. 343-348, ISSN 1876-6102.36. Thorstensen J. B., Foss, S. E., Temperature dependent ablationthreshold in silicon using ultrashort laser pulses., Journal ofApplied Physics 2012, Volum 112 (10), 11 pages,ISSN 0021-8979.37. Zhou X., Maham B., Hjørungnes A., Pilot Contamination forActive Eavesdropping, In proc. for IEEE Transactions on WirelessCommunications, March 2012, Volume 11, Issue,3,pp 903-907, ISSN 1536-1276.UNIK Årsrapport 2012 27