Jahrbuch 1994

Fiederle, M.; Ebling, D.; Hofmann, D.; Salk, M.; Stadler, W.; Benz, K.W.; Meyer, B.K.:
Comparison of CdTe, Cd0.9Zn0.1Te and CdTe0.9Se0.1 crystals: application for gamma and Xray
detectors. - In: J. of crystal growth 138 (1994) S. 529.
Fiegl, B.; Kuhnert, R.; Ben-Chorin, M.; Koch, F.: Evidence for grain boundary hopping
transport in polycrystalline. - In: Appl. phys. let. 65 (1994) S. 371-373.
Hartmann, E.; Enachescu, M.; Koch, F.: Current voltage characteristics of a-Si:H(P)/c-Si
heterojunctions by scanning tunneling microscopy. - In: Proc. of the 22nd Int. Conf. on
the Physics of Semiconductors, Vancouver, Aug. 15-19, 1994.
Hartmann, E.; Marquardt, P.; Dittrich, J.; Steinberger, H.: In-situ organization of nanoparticles
by scanning force microscopy under terrestrial and microgravity conditions. - In:
Adv. in colloid and interface sci. 46 (1993) S. 221-262.
Hofmann, D.; Stadler, W.; Meyer, B.K.; Pereira, E.; Santos, L.; Pereira, L.: A spin
resonace study of the 2.985 eV luminescence centers in natural and synthetic diamond. - In:
Diamond, silicon carbide and nitride wide bandgap semiconductors. 1994. (MRS sympos.
proc.; 339) (MRS spring meet., San Francisco, 1994)
Hofmann, D.; Drechsler, M.; Wetzel, C.; Emanuelson, P.; Meyer, B.K.; Hirler, F.; Abstreiter,
G.; Tränkle, G.; Weimann, G.: Effects of microwave modulation and cyclotron resonance
on the luminescence of GaAs/AlGaAs quantum wells and wires. - In: Proc. of the Int.
Conf. of the Physics of Semiconductors, Vancouver, Aug. 15-19, 1994.
Hofmann, D.; Meyer, B.K.; Pawlik, T.; Alteheld, P.; Spaeth, J.-M.: Electron nuclear
double resonance investigations on the tellurium vacancy in CdTe. - In: Mater. sci. forum
143-147 (1994) S. 417-422.
Hofmann, D.; Meyer, B.K.; Stadler, W.; Kux, A.; Petrova-Koch, V.; Koch, F.: Optically
detected magnetic resonance investigation on rapidly thermally oxidized porous silicon. -
In: Mater. sci. forum 143-149 (1994) S. 1459-1462.
Koch, F.; Petrova-Koch, V.: The surface state mechanism for light emission from porous
silicon. - In: Porous silicon. Eds.: Z.C. Feng et al. River Edge: World Scientific Publ.,
1994, S. 133.
Koch, F.; Petrova-Koch, V.; Muschik, T.: The luminescence of porous silicon: the case for
the surface states. - In: J. of lumin. 57 (1993) S. 271.
Krause-Rehberg, R.; Polity, A.; Drost, T.; Roos, G.; Pens, G.; Volm, D.; Meyer, B.K.; Bischopnik,
G.; Benz, K.W.: Evidence for a vacancy related ground state of the DX-center in
AlGaSb - a positron anihilation study. - In: Phys. rev. B 48 (1993) S. 11723.
Krause-Rehberg, R.; Polity, A.; Drost, T.; Roos, G.; Pens, G.; Volm, D.; Meyer, B.K.: Vacancy
related metastable defects in III-V semiconductors - a study of the EL2 and DX center
by positron anihilation, photoconductivity and infrared spectroscopy. - In: Mater. sci.
forum 143-147 (1994) S. 1099-1104.
Kovalev, D.; Yaroshetzkii, I.D.; Muschik, T.; Petrova-Koch, V.; Koch, F.: Fast and slow
visible luminescence bands of oxidized porous silicon. - In: Appl. phys. let. 64 (1994)
S. 214.
Kovalski, B.; Omling, P.; Meyer, B.K.; Hofmann, D.; Wetzel, C.; Härle, V.; Scholz, F.;
Sobkowicz, P.: Conduction band spin splitting in type-I GaInAs/InP quantum wells. - In:
Phys. rev. B 49 (1994) S. 14786.
Koynov, S.; Fischer, T.; Grebner, S.; Schwarz, R.: Cyclic-CVD for preparation of silicon
films of adjustable structure. - In: Amorphous silicon technology. Eds.: E.A. Schiff et al.
1994, S. 245. (MRS sympos. proc.; 336)(MRS spring meet., San Francisco, 1994)
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