Photo Lithography.ppt - 123SeminarsOnly

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Chapter 5 FUTURE OF EUVL Successful implementation of EUVL would enable projection photolithography to remain the semiconductor industry's patterning technology of choice for years to come. All elements of EUVL technology have been successfully demonstrated in a “full-field proof of Concept” lithography tool. This demonstration dramatically reduces the technology and implementation risks associated with the development of commercial tools. Even though continued technology development and improvement will be required as the technology moves from the demonstration phase to production, there are no known showstoppers that will prevent EUVL from becoming a manufacturing reality. Remarkable progress has been achieved over the past few years in key aspects of EUVL technology. The Engineering Test Stand (ETS) program funded by EUV-LLC successfully demonstrated full-field scanned imaging in 2001. Source power has been increased by a factor of 10; EUV mask blanks are now available from commercial suppliers; and exposure toolmakers have announced schedules for alpha, beta, and production tools. First, there needs to be greater consensus throughout the industry on the lithography roadmap for the next few generations. The promise of immersion lithography has opened the possibility for extending optical lithography even further than what was previously thought possible. However, the current debate between 193nm immersion and 157nm lithography has brought into question the timing for all of the future nodes. Nevertheless, as one observer put it, "All current scenarios start with 193nm and end with EUV." So whatever we do in the interim, let's make sure that the funding, resources, and effort remain focused on making EUV happen on time.
Chapter 6 APPLICATIONS OF EUVL The development of efficient normal-incidence multilayer reflective coatings in the 13-14 nm wavelength region has led to many new optical applications. One of the most demanding applications is extreme ultraviolet lithography (EUVL). This lithography would use reduction imaging to print microchip features smaller than 0.1 pm. The use of all-reflective optics (reflectivities up to 65% per surface with MoSi multilayer coatings) makes it possible to operate a lithographic stepper in the 13-14 nm wavelength range with the necessary throughput required by a commercial microchip manufacturers. Although both synchrotrons and laser produced plasmas have the capability of producing the necessary flux for EUVL, synchrotrons are large and very expensive and laser produced plasmas are very inefficient, costly and can have significant debris problems. The Lyman alpha transition in doubly ionized lithium appears to be an efficient source at 13.5 nm. The ratio of excitation energy to radiated energy for that transition is 53 % and only two electrons per atom need to be removed to produce that radiating state. The optimum lithium plasma radiating at 13.5 nm has been estimated to require an electron density of 1018-1019 cm-3 and an electron temperature of 15-20 eV. Low inductance capillary discharges of compact design have been recently shown to be capable of producing these plasma conditions, while maintaining a small source size l. Experiments demonstrating the "proof of principle" of this source will be described. Future directions include the construction of a lithium vapor discharge lamp operating at temperatures up to 900OC.
Page 1 and 2: Table of Contents Topic Name EUVL P
Page 3 and 4: EUVL its current status and describ
Page 5 and 6: EUVL experimentally and are those v
Page 7 and 8: EUVL line shows the locus of points
Page 9 and 10: As explained above, EUVL is capable
Page 11 and 12: 3.3 HERE'S HOW EUVL WORKS 1 2 3 1.
Page 13 and 14: Figure 2.3: Curve showing the norma
Page 15 and 16: 3.5 EUV CAMERAS Designing an all-re
Page 17 and 18: The figure of a surface refers to i
Page 19 and 20: measurements. An accuracy of 0.25 n
Page 21 and 22: changed all that. Like all interfer
Page 23 and 24: 3.8 MASKS AND MASK MAKING CHALLENGE
Page 25 and 26: 3.10 RESISTS The main problem to be
Page 27 and 28: Figure 2.6 shows the cross-sectione
Page 29 and 30: easonable agreement with the behavi
Page 31: Chapter 4 EUVL ADVANTAGES 1. EUVL l
Page 35 and 36: Chapter 8 REFERENCES • C. W. Gwyn

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