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Cave detection using the Self-Potential-Surface (SPS) technique on ...

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19. Kolloquium Elektromagnetische Tiefenforschung, Burg Ludwigstein, 1.10.-5.10.2001, Hrsg.: A. Hördt und J. B. Stoll<br />

Figure 9: Comparis<strong>on</strong> of <str<strong>on</strong>g>SPS</str<strong>on</strong>g> slices of Fig 8 (x=<br />

1,2, …,10, blue, respectively thin lines) and its<br />

visual average (red, respectively thick line) with <str<strong>on</strong>g>the</str<strong>on</strong>g><br />

crosscut based <strong>on</strong> speological data of <str<strong>on</strong>g>the</str<strong>on</strong>g> cave taken<br />

from Fig. 5.<br />

6 Discussi<strong>on</strong><br />

By definiti<strong>on</strong>, <str<strong>on</strong>g>the</str<strong>on</strong>g> <str<strong>on</strong>g>SPS</str<strong>on</strong>g> <str<strong>on</strong>g>technique</str<strong>on</strong>g> does not account<br />

for any inhomogeneities, such as a cave.<br />

Theoretically, <str<strong>on</strong>g>the</str<strong>on</strong>g> method should have failed.<br />

However, to explain our experimental observati<strong>on</strong><br />

at surface we divide <str<strong>on</strong>g>the</str<strong>on</strong>g> problem into an active and<br />

static part. The active part comprises <str<strong>on</strong>g>the</str<strong>on</strong>g><br />

mechanism that creates a charge accumulati<strong>on</strong> al<strong>on</strong>g<br />

<str<strong>on</strong>g>the</str<strong>on</strong>g> <str<strong>on</strong>g>SPS</str<strong>on</strong>g>, whereas <str<strong>on</strong>g>the</str<strong>on</strong>g> passive part explains how this<br />

charge distributi<strong>on</strong> is mirrored to <str<strong>on</strong>g>the</str<strong>on</strong>g> surface. The<br />

latter questi<strong>on</strong> can be qualitatively explained in<br />

terms of a capacitor with various dielectric media:<br />

Static model for a subhoriz<strong>on</strong>tal layered structure<br />

without a cave<br />

We state that <str<strong>on</strong>g>the</str<strong>on</strong>g> K factor, as defined in <str<strong>on</strong>g>the</str<strong>on</strong>g> original<br />

idea by Aubert et al. (1990) and Aubert & Atangana<br />

(1996) for a subhoriz<strong>on</strong>tal layered structure of<br />

homogenious media, is similar to <str<strong>on</strong>g>the</str<strong>on</strong>g> electric field<br />

strength in a capacitor (Fig. 10 a)):<br />

EF ≅ K . (5)<br />

E F electrical field strength<br />

A area<br />

Q charge<br />

D displacement of charge<br />

d distance<br />

ε 0 electrical permittivity of vacuum<br />

1 −9<br />

As<br />

( 10 )<br />

36π<br />

Vm<br />

ε r relative electrical permittivity<br />

( ε lim est<strong>on</strong>e = 8 – 12, ε water = 80, ε air =1)<br />

V potential<br />

(Values taken from Landolt & Börnstein<br />

(1952))<br />

Figure 10: a) Capacitor without and b) capacitor with a dielectric media. c) Capacitor with a series of<br />

dielectric media.

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