UTC - DCE FEL ČVUT v Praze
UTC - DCE FEL ČVUT v Praze
UTC - DCE FEL ČVUT v Praze
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<strong>UTC</strong> 2SC1815 NPN EPITAXIAL SILICON TRANSISTOR<br />
AUDIO FREQUENCY AMPLIFIER<br />
HIGH FREQUENCY OSC NPN<br />
TRANSISTOR<br />
FEATURES<br />
*Collector-Emitter voltage:<br />
BVCEO=50V<br />
*Collector current up to 150mA<br />
* High hFE linearity<br />
*complimentary to 2SA1015<br />
TO-92<br />
<strong>UTC</strong> UNISONIC TECHNOLOGIES CO. LTD 1<br />
1<br />
1:EMITTER 2:COLLECTOR 3. BASE<br />
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )<br />
PARAMETER SYMBOL RATING UNIT<br />
Collector-base voltage VCBO 60 V<br />
Collector-emitter voltage VCEO 50 V<br />
Emitter-base voltage VEBO 5 V<br />
Collector dissipation(Ta=25°C) Pc 400 mW<br />
Collector current Ic 150 mA<br />
Base current IB 50 mA<br />
Junction Temperature Tj 125 °C<br />
Storage Temperature TSTG -55 ~ +150 °C<br />
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)<br />
Parameter Symbol Test conditions MIN TYP MAX UNIT<br />
Collector cut-off current ICBO VCB=60V,IE=0 100 nA<br />
Emitter cut-off current IEBO VEB=5V,Ic=0 100 nA<br />
DC current gain(note) hFE1<br />
hFE2<br />
VCE=6V,Ic=2mA<br />
VCE=6V,Ic=150mA<br />
Collector-emitter saturation voltage VCE(sat) Ic=100mA,IB=10mA 0.1 0.25 V<br />
Base-emitter saturation voltage VBE(sat) Ic=100mA,IB=10mA 1.0 V<br />
Current gain bandwidth product fT VCE=10V,Ic=50mA 80 MHz<br />
Output capacitance Cob VCB=10V,IE=0,f=1MHz 2.0 3.0 pF<br />
Noise Figure NF Ic=-0.1mA,VCE=6V<br />
RG=10kΩ,f=100Hz<br />
1.0 1.0 dB<br />
70<br />
25<br />
700<br />
QW-R201-006,A
<strong>UTC</strong> 2SC1815 NPN EPITAXIAL SILICON TRANSISTOR<br />
CLASSIFICATION OF hFE1<br />
RANK Y G L<br />
RANGE 120-240 200-400 350-700<br />
TYPICAL CHARACTERISTIC CURVES<br />
Ic,Collector current (mA)<br />
Saturation voltage (mV)<br />
100<br />
80<br />
60<br />
40<br />
20<br />
Fig.1 Static characteristics<br />
IB=50 µA<br />
0<br />
0 4 8 12 16 20<br />
Collector-Emitter voltage ( V)<br />
10 4<br />
10 3<br />
10 2<br />
10 1<br />
10 -1<br />
Fig.4 Saturation voltage<br />
Ic=10*IB<br />
VBE(sat)<br />
VCE(sat)<br />
IB=300 µA<br />
IB=250 µA<br />
IB=200 µA<br />
IB=150 µA<br />
IB=100 µA<br />
10<br />
Ic,Collector current (mA)<br />
2<br />
10 1<br />
10 0<br />
10 3<br />
HFE, DC current Gain<br />
Current Gain-bandwidth<br />
product,fT(MHz)<br />
10 3<br />
10 2<br />
10 1<br />
10 0<br />
10 3<br />
10 2<br />
10 1<br />
10 -1<br />
10 0<br />
10 -1<br />
Fig.2 DC current Gain<br />
10<br />
Ic,Collector current (mA)<br />
2<br />
10 1<br />
10 0<br />
<strong>UTC</strong> UNISONIC TECHNOLOGIES CO. LTD 2<br />
VCE=6V<br />
Fig.5 Current gain-bandwidth<br />
product<br />
VCE=6V<br />
10<br />
Ic,Collector current (mA)<br />
0<br />
10 1<br />
10 3<br />
10 2<br />
Ic,Collector current (mA)<br />
Cob,Capacitance (pF)<br />
10 2<br />
10 1<br />
10 0<br />
10 -1<br />
10 2<br />
10 1<br />
10 0<br />
10 -1<br />
Fig.3 Base-Emitter on Voltage<br />
VCE=6V<br />
0 0.2 0.4 0.6 0.8 1.0<br />
10 0<br />
Base-Emitter voltage (V)<br />
Fig.6 Collector output<br />
Capacitance<br />
f=1MHz<br />
IE=0<br />
10<br />
Collector-Base voltage (V)<br />
1<br />
10 2<br />
10 3<br />
QW-R201-006,A
This datasheet has been download from:<br />
www.datasheetcatalog.com<br />
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