IDeF-X ECLAIRs: A CMOS ASIC for the readout of Cd(Zn)Te ...
IDeF-X ECLAIRs: A CMOS ASIC for the readout of Cd(Zn)Te ...
IDeF-X ECLAIRs: A CMOS ASIC for the readout of Cd(Zn)Te ...
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<strong>IDeF</strong>-X <strong>IDeF</strong> X <strong>ECLAIRs</strong>: A <strong>CMOS</strong> <strong>ASIC</strong> <strong>for</strong> <strong>the</strong> <strong>readout</strong> <strong>of</strong> <strong>Cd</strong>(<strong>Zn</strong>)<strong>Te</strong><br />
Detectors <strong>for</strong> <strong>the</strong> SVOM mission.<br />
O. Gevin, P.Baron, X. Coppolani, E. Delagnes, F.Daly, O. Limousin, F. Lugiez,<br />
A.Meuris,F.Pinsard<br />
New <strong>CMOS</strong> ultra low noise, rad-hard rad hard mixed circuit optimized <strong>for</strong> <strong>the</strong> <strong>readout</strong> <strong>of</strong><br />
low capacitive(2-5pF) and low dark current (1-1000pA) <strong>Cd</strong>(<strong>Zn</strong>)<strong>Te</strong> detectors.<br />
Designed <strong>for</strong> <strong>the</strong> X-ray/gamma-ray 2D coded mask imaging telescope <strong>of</strong> <strong>the</strong><br />
SVOM/<strong>ECLAIRs</strong> satellite.<br />
Bias voltage<br />
Typical power consumption<br />
Polarity<br />
Conversion factor<br />
Dynamic range (charge)<br />
Dynamic range <strong>of</strong> <strong>the</strong><br />
energy discrimination<br />
threshold<br />
3.3 V<br />
96 mW<br />
Both<br />
170-200 mV/fC<br />
0 50 ke- (220 keV)<br />
210 e - 4 ke -<br />
5 th NDIP Conference. June 15-20, 2008. Aix-les-Bains FRANCE<br />
1
Noise<br />
ENC floor = 35 e- +6.5 e-/pF<br />
Energy Discrimination<br />
<strong>IDeF</strong>-X <strong>IDeF</strong> X <strong>ECLAIRs</strong>: Main results<br />
LTH = 4keV@10pF Noise events rate
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