200V_Schottkys_Brochure_(~1.6MB) - Solid State Devices, Inc.
200V_Schottkys_Brochure_(~1.6MB) - Solid State Devices, Inc.
200V_Schottkys_Brochure_(~1.6MB) - Solid State Devices, Inc.
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SSR08150CTS.22 thru SSR08200CTS.22<br />
150 - 200 Volts, 8 Amps<br />
Hermetic Surface Mount Centertap Schottky Rectifier<br />
▪ Extremely small footprint<br />
▪ Extremely low forward voltage drop<br />
▪ Low reverse leakage current<br />
▪ Hermetically sealed surface mount package<br />
▪ Guard ring for overvoltage protection<br />
▪ 175°C operating junction temperature<br />
▪ TX, TXV, and S level screening available - consult factory<br />
MAXIMUM RATINGS 1/ SYMBOL VALUE UNIT<br />
Peak Repetitive Reverse Voltage<br />
DC Blocking Voltage<br />
Average Rectified Forward Current<br />
Resistive load, 60 Hz, sine wave, T A<br />
=25°C, per leg<br />
SSR08150<br />
SSR08200<br />
Peak Surge Current<br />
8.3 msec pulse, half sine wave superimposed on I O<br />
, allow junction to reach equilibrium<br />
between pulses, T A<br />
=25°C, per leg<br />
V RRM<br />
150<br />
V RWM<br />
200<br />
V R<br />
Volts<br />
I O<br />
4 Amps<br />
I FSM<br />
40 Amps<br />
Operating & Storage Temperature T OP<br />
& T STG<br />
-65 to +175 °C<br />
Thermal Resistance<br />
Junction to case, per leg<br />
R θJC<br />
8<br />
(typ 6.5)<br />
ELECTRICAL CHARACTERISTICS (PER LEG) SYMBOL MIN TYP MAX UNIT<br />
Instantaneous Forward Voltage Drop<br />
T A<br />
=25°C, 300 µsec pulse<br />
Instantaneous Forward Voltage Drop<br />
T A<br />
=-55°C, 300 µsec pulse<br />
Instantaneous Forward Voltage Drop<br />
T A<br />
=125°C, 300 µsec pulse<br />
Reverse Leakage Current<br />
Rated V R<br />
, T A<br />
=25°C, 300 µsec pulse minimum<br />
Reverse Leakage Current<br />
Rated V R<br />
, T A<br />
=100°C, 300 µsec pulse minimum<br />
I F<br />
=0.2A<br />
I F<br />
=1A<br />
I F<br />
=2A<br />
I F<br />
=3A<br />
I F<br />
=4A<br />
I F<br />
=2A<br />
I F<br />
=4A<br />
I F<br />
=0.2A<br />
I F<br />
=1A<br />
I F<br />
=2A<br />
I F<br />
=3A<br />
I F<br />
=4A<br />
V F<br />
-<br />
-<br />
-<br />
-<br />
-<br />
V F<br />
-<br />
-<br />
V F<br />
-<br />
-<br />
-<br />
-<br />
-<br />
0.650<br />
0.770<br />
0.825<br />
0.865<br />
0.900<br />
1.030<br />
1.340<br />
0.490<br />
0.615<br />
0.685<br />
0.730<br />
0.770<br />
-<br />
0.820<br />
0.870<br />
-<br />
0.950<br />
-<br />
-<br />
-<br />
0.690<br />
0.760<br />
-<br />
0.850<br />
°C/W<br />
SMD.22<br />
(S.22)<br />
Volts<br />
Volts<br />
Volts<br />
I R<br />
- 0.15 2 µA<br />
I R<br />
- 20 - µA<br />
Reverse Leakage Current<br />
Rated V R<br />
, T A<br />
=125°C, 300 µsec pulse minimum<br />
Reverse Leakage Current<br />
Rated V R<br />
, T A<br />
=150°C, 300 µsec pulse minimum<br />
I R<br />
- 100 500 µA<br />
I R<br />
- 500 - µA<br />
Junction Capacitance<br />
T A<br />
=25°C, f=1 MHz<br />
V R<br />
=5V<br />
V R<br />
=10V<br />
C J<br />
-<br />
-<br />
42<br />
32<br />
-<br />
50<br />
pF<br />
Case Outline: SMD.22 (S.22)<br />
Pin Out:<br />
Pin 1: Cathode<br />
Pin 2: Anode 1<br />
Pin 3: Anode 2<br />
Note: For optimal performance,<br />
connect anode terminals together<br />
.134 .030<br />
.052<br />
3<br />
2<br />
.220±.007<br />
1<br />
.140<br />
.065±.010<br />
.150<br />
±.007<br />
.070 .090<br />
.005 TYP<br />
1/ Unless otherwise specifi ed, all electrical characteristics @ 25°C.<br />
200 Volt Hermetic Silicon Schottky Rectifi ers<br />
9
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